Abstract: A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.

Abstract: A sound receiving device and a control method of the sound receiving device are provided. The sound receiving device includes a microphone apparatus, an object detection apparatus, and a processor. The microphone apparatus provides an audio signal. The object detection apparatus detects position information of at least one object. The processor is coupled to the microphone apparatus and the object detection apparatus. The processor determines position information of a sound source according to the audio signal and the position information of the at least one object, and adjusts each microphone gain in the microphone apparatus to receive sound from the sound source.