Patents by Inventor Hung Bin Lin
Hung Bin Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948810Abstract: A vacuum apparatus includes process chambers, and a transfer chamber coupled to the process chambers. The transfer chamber includes one or more vacuum ports, thorough which a gas inside the transfer chamber is exhausted, and vent ports, from which a vent gas is supplied. The one or more vacuum ports and the vent ports are arranged such that air flows from at least one of the vent ports to the one or more vacuum ports are line-symmetric with respect to a center line of the transfer chamber.Type: GrantFiled: February 27, 2018Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Li-Chao Yin, Yuling Chiu, Yu-Lung Yang, Hung-Bin Lin
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Patent number: 11914429Abstract: An electronic device includes a host, a display, a sliding plate, and a keyboard. The host has an operating surface. The display is pivoted to the host. The sliding plate is slidably disposed in the host, where the display is mechanically coupled to the sliding plate, and the sliding plate includes a plat portion and a recess portion that are arranged side by side. The keyboard is integrated to the host. The keyboard includes a key structure, where the key structure includes a key cap and a reciprocating element, and the key cap is exposed from the operating surface of the host. The reciprocating element is disposed between the key cap and the sliding plate and has a first end connected to the key cap and a second end contacting the sliding plate. The second end is located on a sliding path of the plat portion and the recess portion.Type: GrantFiled: March 9, 2023Date of Patent: February 27, 2024Assignee: Acer IncorporatedInventors: Hung-Chi Chen, Shun-Bin Chen, Huei-Ting Chuang, Yen-Chieh Chiu, Yu-Wen Lin, Yen-Chou Chueh, Po-Yi Lee
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Publication number: 20230378003Abstract: In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.Type: ApplicationFiled: August 4, 2023Publication date: November 23, 2023Inventors: Li-Chao YIN, Hung-Bin LIN, Hsin-Hsien WU, Chih-Ming KE, Chyi Shyuan CHERN, Ming-Hua LO
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Publication number: 20220375729Abstract: An edge ring, for a plasma etcher, may include a circular bottom portion with an opening sized to receive an electrostatic chuck supporting a semiconductor device, and a circular top portion integrally connected to a first top part of the circular bottom portion. The edge ring may include a circular chamfer portion integrally connected to a second top part of the circular bottom portion and integrally connected to a side of the circular top portion. The circular chamfer portion may include an inner surface that is angled radially outward from the opening at less than ninety degrees.Type: ApplicationFiled: July 27, 2022Publication date: November 24, 2022Inventors: Chien-Yu WANG, Hung-Bin LIN, Shih-Ping HONG, Shih-Hao CHEN, Chen-Hsiang LU, Ping-Chung LEE
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Publication number: 20220351948Abstract: An apparatus includes a chamber, a pedestal configured to receive and support a semiconductor wafer in the chamber, and an edge ring disposed over the pedestal. The edge ring includes a first portion having a first top surface, a second portion coupled to the first portion and having a second top surface lower than the first top surface, and a recess defined in the first portion. The second top surface is under the semiconductor wafer. The recess has a depth, and a distance between the pedestal and an inner surface of the recess is substantially equal to the depth of the recess.Type: ApplicationFiled: July 12, 2022Publication date: November 3, 2022Inventors: HUNG-BIN LIN, LI-CHAO YIN, SHIH-TSUNG CHEN, YU-LUNG YANG, YING CHIEH WANG, BING KAI HUANG, SU-YU YEH
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Patent number: 11404250Abstract: An edge ring, for a plasma etcher, may include a circular bottom portion with an opening sized to receive an electrostatic chuck supporting a semiconductor device, and a circular top portion integrally connected to a first top part of the circular bottom portion. The edge ring may include a circular chamfer portion integrally connected to a second top part of the circular bottom portion and integrally connected to a side of the circular top portion. The circular chamfer portion may include an inner surface that is angled radially outward from the opening at less than ninety degrees.Type: GrantFiled: July 8, 2020Date of Patent: August 2, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Yu Wang, Hung-Bin Lin, Shih-Ping Hong, Shih-Hao Chen, Chen-Hsiang Lu, Ping-Chung Lee
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Publication number: 20220013337Abstract: An edge ring, for a plasma etcher, may include a circular bottom portion with an opening sized to receive an electrostatic chuck supporting a semiconductor device, and a circular top portion integrally connected to a first top part of the circular bottom portion. The edge ring may include a circular chamfer portion integrally connected to a second top part of the circular bottom portion and integrally connected to a side of the circular top portion. The circular chamfer portion may include an inner surface that is angled radially outward from the opening at less than ninety degrees.Type: ApplicationFiled: July 8, 2020Publication date: January 13, 2022Inventors: Chien-Yu WANG, Hung-Bin LIN, Shih-Ping HONG, Shih-Hao CHEN, Chen-Hsiang LU, Ping-Chung LEE
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Publication number: 20210249232Abstract: An apparatus includes a chamber, a pedestal configured to receive and support a semiconductor wafer in the chamber, and an edge ring disposed over the pedestal. The edge ring includes a first portion having a first top surface, a second portion coupled to the first portion and having a second top surface lower than the first top surface, and a recess defined in the first portion. The second top surface is under the semiconductor wafer. The recess has a depth, and a distance between the pedestal and an inner surface of the recess is substantially equal to the depth of the recess.Type: ApplicationFiled: February 10, 2020Publication date: August 12, 2021Inventors: HUNG-BIN LIN, LI-CHAO YIN, SHIH-TSUNG CHEN, YU-LUNG YANG, YING CHIEH WANG, BING KAI HUANG, SU-YU YEH
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Publication number: 20210217670Abstract: In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.Type: ApplicationFiled: October 30, 2020Publication date: July 15, 2021Inventors: Li-Chao Yin, Hung-Bin Lin, Hsin-Hsien Wu, Chih-Ming Ke, Chyi Shyuan Chern, Ming-Hua Lo
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Publication number: 20190148177Abstract: A vacuum apparatus includes process chambers, and a transfer chamber coupled to the process chambers. The transfer chamber includes one or more vacuum ports, thorough which a gas inside the transfer chamber is exhausted, and vent ports, from which a vent gas is supplied. The one or more vacuum ports and the vent ports are arranged such that air flows from at least one of the vent ports to the one or more vacuum ports are line-symmetric with respect to a center line of the transfer chamber.Type: ApplicationFiled: February 27, 2018Publication date: May 16, 2019Inventors: Li-Chao YIN, Y. L. CHIU, Yu-Lung YANG, Hung-Bin LIN
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Patent number: 9736429Abstract: A cloud video system is provided. The cloud video system includes: a cloud server and a plurality of clients. The clients are connected to the cloud server via a network, and each client has an individual role. When the first of the clients has established a video session call with other clients, the cloud server determines whether to record the video session call according to the individual role of each client in the video session call.Type: GrantFiled: June 9, 2016Date of Patent: August 15, 2017Assignee: QUANTA COMPUTER INC.Inventors: Chen-Che Huang, Yu-Hsing Lin, Chin-Yuan Ting, Chun-Hsiung Fang, Hung-Bin Lin, Shih-Ming Chen
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Patent number: 9184017Abstract: An object of the present invention is to provide a fluorescent display tube with a touch switch allowing electrodes such as touch electrode, anode electrode, and wirings thereof to be formed on the same substrate at the same time, and having an easy structure, and to provide a method of forming the electrodes and wirings of the fluorescent display tube. The anode electrodes, the touch electrodes, the shield electrode, and the anode wirings are formed on the front substrate. The shield electrode is formed in between the touch electrodes and the anode electrodes, and in between the touch electrodes and the anode wirings. The shield electrode is made of a continuous single conductive film. The touch electrodes are so formed as to surround the corresponding one of the anode electrodes.Type: GrantFiled: September 13, 2013Date of Patent: November 10, 2015Assignee: FUTABA CORPORATIONInventors: Katsushi Tokura, Ping Ning Chiu, Ming Chun Wang, Pou Tsen Wang, Hung Bin Lin
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Publication number: 20140091708Abstract: An object of the present invention is to provide a fluorescent display tube with a touch switch allowing electrodes such as touch electrode, anode electrode, and wirings thereof to be formed on the same substrate at the same time, and having an easy structure, and to provide a method of forming the electrodes and wirings of the fluorescent display tube. The anode electrodes, the touch electrodes, the shield electrode, and the anode wirings are formed on the front substrate. The shield electrode is formed in between the touch electrodes and the anode electrodes, and in between the touch electrodes and the anode wirings. The shield electrode is made of a continuous single conductive film. The touch electrodes are so formed as to surround the corresponding one of the anode electrodes.Type: ApplicationFiled: September 13, 2013Publication date: April 3, 2014Applicants: Taiwan FUTABA Electronics Corporation, Futaba CorporationInventors: Katsushi Tokura, Piing Ning Chiu, Ming Chun Wang, Pou Tsen Wang, Hung Bin Lin