Abstract: Methods and systems to provide bit cell write-assist, including equalization of voltages of Bit and Bit nodes of a bit cell prior to a write operation. Equalization may be performed with a pulse-controlled transistor to transfer charge between the storage nodes. Pulse width and/or amplitude may be configurable, such as to scale with voltage. Bit cell write-assist may include reduction of bit cell retention strength during equalization, which may be continued during a write operation. Write-assist may be provided to each of multiple bit cells when a write operation is directed to a subset of the bit cells, which may conserve power and/or area. A partially-decoded address may be used to provide write-assistance to multiple bit cells prior to a write operation. Write-assistance may permit writing of Bit and Bit with a voltage swing significantly lower than an operating voltage of the bit cell.

Abstract: A method, computer program product, and data processing system for efficiently performing automated placement of timing-critical unit-level cells in a hierarchical integrated circuit design is disclosed. In preparation for global optimization the entire unit at the cell level, macro-level cells are assigned a “placement force” that serves to limit the movement of the macro-level cells from their current position. Movement boundaries for each macro element are also defined, so as to keep the components in a given macro element in relative proximity to each other. Optimization/placement of the unit design is then performed, via a force-directed layout algorithm, on a “flattened” model of the design while respecting the movement boundaries. Following this “flattened” optimization, the placed “unit-level” cells are modeled as blockages and the macro elements are optimized individually, while respecting the location(s) of the blockages.

Abstract: Methods and systems to provide bit cell write-assist, including equalization of voltages of Bit and Bit nodes of a bit cell prior to a write operation. Equalization may be performed with a pulse-controlled transistor to transfer charge between the storage nodes. Pulse width and/or amplitude may be configurable, such as to scale with voltage. Bit cell write-assist may include reduction of bit cell retention strength during equalization, which may be continued during a write operation. Write-assist may be provided to each of multiple bit cells when a write operation is directed to a subset of the bit cells, which may conserve power and/or area. A partially-decoded address may be used to provide write-assistance to multiple bit cells prior to a write operation. Write-assistance may permit writing of Bit and Bit with a voltage swing significantly lower than an operating voltage of the bit cell.

Abstract: A test structure for characterizing a production static random access memory (SRAM) array. The test structure includes a characterization circuit having multiple memory cell columns connected in series to form a ring configuration. The characterization circuit is fabricated on a wafer substrate in common with and proximate to a production SRAM array. The characterization circuit preferably includes SRAM cells having a circuit topology substantially identical to the circuit topology of memory cells within the production SRAM array. In one embodiment, the test structure is utilized for characterizing a multi-port memory array and includes multiple memory cell columns connected in series to form a ring oscillator characterization circuit. Each cell column in the characterization circuit includes multiple SRAM cells each having a latching node and multiple data path access nodes.

Abstract: A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit includes a plurality of bit line structures, a plurality of word line structures intersecting said plurality of bit line structures to form a plurality of cell locations, and a plurality of cells located at said plurality of cell locations, each of said cells being selectively coupled to a corresponding bit line structure under control of a corresponding word line structure, each of said cells comprising a logical storage element having at least a first n-type field effect transistor and at least a first p-type field effect transistor, wherein said at least first n-type field effect transistor is formed with a relatively thick buried oxide layer sized to reduce capacitance of said bit line structures, and said at least first p-type field effect transistor is formed with a relatively thin buried oxide layer.

Abstract: A system and method for implementing arithmetic logic unit (ALU) support for value-based control dependence sequences. According to a first embodiment of the present invention, an ALU generates a carry-out signal designating one of a first and second value as a larger value. In response to the carry-out signal, the ALU updates a storage location with a third value, which is the larger value. According to a second embodiment of the present invention, an ALU generates a carry-out signal designating one of a first and second value as a larger value. In response to the carry-out signal, the ALU updates a storage location with a third value. The third value is a fourth value, if the carry-out signal designates the first value as the larger value or the third value is a fifth value, if the carry-out signal designates the second value as the larger value.

Abstract: A test structure for characterizing a production static random access memory (SRAM) array. The test structure includes a characterization circuit having multiple memory cell columns connected in series to form a ring configuration. The characterization circuit is fabricated on a wafer substrate in common with and proximate to a production SRAM array. The characterization circuit preferably includes SRAM cells having a circuit topology substantially identical to the circuit topology of memory cells within the production SRAM array. In one embodiment, the test structure is utilized for characterizing a multi-port memory array and includes multiple memory cell columns connected in series to form a ring oscillator characterization circuit. Each cell column in the characterization circuit includes multiple SRAM cells each having a latching node and multiple data path access nodes.

Abstract: A test structure for characterizing a production static random access memory (SRAM) array. The test structure includes a characterization circuit having multiple memory cell columns connected in series to form a ring configuration. The characterization circuit is fabricated on a wafer substrate in common with and proximate to a production SRAM array. The characterization circuit preferably includes SRAM cells having a circuit topology substantially identical to the circuit topology of memory cells within the production SRAM array. In one embodiment, the test structure is utilized for characterizing a multi-port memory array and includes multiple memory cell columns connected in series to form a ring oscillator characterization circuit. Each cell column in the characterization circuit includes multiple SRAM cells each having a latching node and multiple data path access nodes.

Abstract: A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit includes a plurality of bit line structures, a plurality of word line structures intersecting said plurality of bit line structures to form a plurality of cell locations, and a plurality of cells located at said plurality of cell locations, each of said cells being selectively coupled to a corresponding bit line structure under control of a corresponding word line structure, each of said cells comprising a logical storage element having at least a first n-type field effect transistor and at least a first p-type field effect transistor, wherein said at least first n-type field effect transistor is formed with a relatively thick buried oxide layer sized to reduce capacitance of said bit line structures, and said at least first p-type field effect transistor is formed with a relatively thin buried oxide layer.

Abstract: A memory circuit includes a plurality of bit line structures, a plurality of word line structures intersecting the plurality of bit line structures to form a plurality of cell locations; and a plurality of cells located at the plurality of cell locations. Each of the cells is selectively coupled to a corresponding one of the bit line structures under control of a corresponding one of the word line structures, and each of the cells in turn includes a logical storage element having at least a first n-type field effect transistor and at least a first p-type field effect transistor. The at least first n-type field effect transistor is formed with a relatively thick buried oxide layer sized to reduce capacitance of the bit line structures, and the at least first p-type field effect transistor is formed with a relatively thin buried oxide layer.

Abstract: A method of providing wiring efficiency in a permute unit. Multiple selectors receive input data and shared control signals from multiple register files. The permute unit includes multiple multiplexors (MUXs) coupled to multiple logical AND gates. The multiple logical AND gates are coupled to multiple logical OR gates. The logical AND gates are physically separated from the logical OR gates. The logical AND gates receive input from one or more output data signals from the selectors. The logical OR gates combine the one or more output signals from the logical AND gates and provide output data from the permute unit.

Abstract: An in-circuit timing monitor having a selectable-path ring oscillator circuit provides delay and performance measurements in an actual circuit environment. A test mode signal is applied to a digital circuit to de-select a given functional input signal applied to a functional logic block within the digital circuit and replace it with feedback coupled from an output of the functional logic block, when test mode operation is selected. The signal path from the de-selected input to the output is selected so that the signal path will oscillate, and a characteristic frequency or phase of the output signal is measured to determine the delay. Other inputs to the functional logic block are set to a predetermined set of logic values. The selection may be made at a register preceding the digital inputs or made in the first level of logic of the functional logic block.

Abstract: A method, computer program product, and data processing system for efficiently performing automated placement of timing-critical unit-level cells in a hierarchical integrated circuit design is disclosed. In preparation for global optimization the entire unit at the cell level, macro-level cells are assigned a “placement force” that serves to limit the movement of the macro-level cells from their current position. Movement boundaries for each macro element are also defined, so as to keep the components in a given macro element in relative proximity to each other. Optimization/placement of the unit design is then performed, via a force-directed layout algorithm, on a “flattened” model of the design while respecting the movement boundaries. Following this “flattened” optimization, the placed “unit-level” cells are modeled as blockages and the macro elements are optimized individually, while respecting the location(s) of the blockages.

Abstract: A cascaded pass-gate test circuit including interposed split-output drive devices provides accurate measurement of critical timing parameters of pass gates. The rise time and fall time of signals passed through the pass gate can be separately measured in a ring oscillator or one-shot delay line configuration. Inverters or other buffer circuits are provided as drive devices to couple the pass gates in cascade. The final complementary tree in each drive device is split so that the only one of the output pull-down transistor or pull-up transistor is connected to the next pass gate input, while the other transistor is connected to the output of the pass gate. The result is that the state transition associated with the device connected to the pass gate input is dominant in the delay, while the other state transition is propagated directly to the output of the pass gate, bypassing the pass gate.

Abstract: A wordline-to-bitline timing ring oscillator circuit for evaluating storage cell access time provides data on internal bitline access timing, and in particular the total wordline select-to-bitline read output timing. Columns of a storage array are connected in a ring, forming a ring oscillator. The bitline read circuit output of each column is connected to a wordline select input of a next column, with a net inversion around the ring, so that a ring oscillator is formed. The period of oscillation of the ring oscillator is determined by the total wordline select-to-bitline read circuit output timing for a first phase and the pre-charge interval time for the other phase, with the bitline read timing dominating. The circuit may be applied both to small-signal storage arrays, with the sense amplifier timing included within the ring oscillator period, or to large-signal storage arrays, with the read evaluate circuit timing included.

Abstract: A programmable clock generator circuit receives control signals and a global clock and generates a pulsed data clock and a scan clock in response to gating signals. The clock generator has data clock and scan clock feed-forward paths and a single feedback path. Delay control signals program delay elements in the feedback path and logic gates reshape and generate a feedback clock signal. The global clock and the feedback clock signal are combined to generates a pulsed local clock signal. A scan clock feed-forward circuit receives the local clock and generates the scan clock. A data clock feed-forward circuit receives the local clock and generates the data clock with a logic controlled delay relative to the local clock signal. The feedback clock is generated with controlled delay thereby modifying the pulse width of the data and scan clocks independent of the controlled delay of the data clock feed-forward path.

Abstract: A circuit and method of correcting the duty cycle of digital signals is disclosed. The duty cycle of an input digital signal is measured and compared to a desired duty cycle. The leading edge of the input digital signal is passed to an output. The circuit and method adjust the falling edges at the output to achieve the desired duty cycle. The falling edges occur in response to rising edges of a delayed version of the input digital signal.

Abstract: A memory circuit includes a plurality of bit line structures, a plurality of word line structures intersecting the plurality of bit line structures to form a plurality of cell locations; and a plurality of cells located at the plurality of cell locations. Each of the cells is selectively coupled to a corresponding one of the bit line structures under control of a corresponding one of the word line structures, and each of the cells in turn includes a logical storage element having at least a first n-type field effect transistor and at least a first p-type field effect transistor.

Abstract: A high performance, low power up/down counter is set forth. The counter presented is controlled by two clock pulses, an up pulse and a down pulse, and updates all bits of the counter in parallel. These bits are then latched using a scannable pulsed limited output switching dynamic logic latch. By using a limited switch dynamic logic latch, the counter is able to utilize the speed of dynamic logic without requiring the traditional dynamic logic power. The area saved and speed gained by using a dynamic latch is significant compared to a typical edge-triggered flip-flop. Additionally, by computing all the next count state bits in parallel, the counter reduces an overall count computation delay by eliminating the counter ripple.

Abstract: A method of providing wiring efficiency in a permute unit. Multiple selectors receive input data and shared control signals from multiple register files. The permute unit includes multiple multiplexors (MUXs) coupled to multiple logical AND gates. The multiple logical AND gates are coupled to multiple logical OR gates. The logical AND gates are physically separated from the logical OR gates. The logical AND gates receive input from one or more output data signals from the selectors. The logical OR gates combine the one or more output signals from the logical AND gates and provide output data from the permute unit.