Abstract: The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function metal layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.

Abstract: A display device is provide. The display device is within a transportation device having a first seating area, including a display unit, a mechanical platform, and a mechanical shaft assembly. The mechanical platform is configured to correspond to the first seating area. The mechanical shaft assembly is disposed on the mechanical platform and including a first shaft portion, a second shaft portion, and a third shaft portion. The first shaft portion is connected to the display unit and driving the display unit to move along a horizontal direction. The second shaft portion is connected to an upper end of the display unit and driving the display unit to rotate around a second axis. The third shaft portion is connected to the second shaft portion and driving the display unit to rotate around a third axis.

Abstract: Methods for plasma stability in a plasma treatment tool are disclosed. A laser is positioned within a plasma treatment chamber within a skin depth of the electromagnetic field generated therein. The laser can be synchronized with the electrical triggering signals that generate the electromagnetic field. This scheme provides a stable and efficient method of plasma ignition.

Abstract: A semiconductor device and method of manufacture are provided. In some embodiments a treatment process is utilized to treat a work function layer. The treatment prevents excessive oxidation of the work function layer during subsequent processing steps, such as application of a subsequent photoresist material, thereby allowing the work function layer to be thinner than otherwise.

Abstract: A semiconductor device includes a first transistor, a second transistor, a first metal silicide layer, a second metal silicide layer, and an isolation structure. The first transistor includes a first channel layer, a first gate structure, and first source/drain epitaxy structures. The second transistor includes a second channel layer, a second gate structure, and second source/drain epitaxy structures. The first metal silicide layer is over one of the first source/drain epitaxy structures. The second metal silicide layer is over one of the second source/drain epitaxy structures. The isolation structure covers the one of the first source/drain epitaxy structures and the one of the second source/drain epitaxy structures, wherein in a cross-sectional view, the one of the first source/drain epitaxy structures is separated from the isolation structure through the first metal silicide layer, while the one of the second source/drain epitaxy structures is in contact with the isolation structure.

Abstract: A structure includes a semiconductor substrate including a first semiconductor region and a second semiconductor region, a first transistor in the first semiconductor region, and a second transistor in the second semiconductor region. The first transistor includes a first gate dielectric over the first semiconductor region, a first work function layer over and contacting the first gate dielectric, and a first conductive region over the first work function layer. The second transistor includes a second gate dielectric over the second semiconductor region, a second work function layer over and contacting the second gate dielectric, wherein the first work function layer and the second work function layer have different work functions, and a second conductive region over the second work function layer.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

Abstract: A structure includes a semiconductor substrate including a first semiconductor region and a second semiconductor region, a first transistor in the first semiconductor region, and a second transistor in the second semiconductor region. The first transistor includes a first gate dielectric over the first semiconductor region, a first work function layer over and contacting the first gate dielectric, and a first conductive region over the first work function layer. The second transistor includes a second gate dielectric over the second semiconductor region, a second work function layer over and contacting the second gate dielectric, wherein the first work function layer and the second work function layer have different work functions, and a second conductive region over the second work function layer.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

Abstract: A laser engraving mechanism (100) for engraving a workpiece (16) includes an image receiver (12), an image processor (13), an engraving controller (14), and a laser emitting member (15). The image receiver screens the workpiece to form an image of the workpiece and transforms the image of the workpiece into electronic image signals. The image processor is connected to the image receiver. The image processor saves a group of datum coordinates, forms a group of engraving coordinates according to the electronic image signals, and compares the engraving coordinates with the datum coordinates. The engraving controller is connected to the image processor. The laser emitting member is connected to the engraving controller, and the engraving controller instructs the laser emitting member to engrave the workpiece based on a comparison of results between the engraving coordinates and the datum coordinates.

Abstract: A rack apparatus (100) includes a frame (10), a plurality of supporting members (106), and a plurality of retaining members (12). The supporting members are arranged/mounted on/to the frame. The retaining members are mounted on the supporting members. Each retaining member includes a fixing piece (120) and two supporting pieces (122, 124). The fixing piece has a notched mounting portion. The two supporting pieces are respectively positioned at an opposite side of the fixing piece. Each supporting piece forms a retaining portion (i.e., a through hole therein). The notched mounting portion and the retaining portions together help retain a workpiece within a given retaining member.

Abstract: A housing (10) used in portable electronic devices includes gripping portions (40) defined thereon, such gripping portions being bounded by grooving created in a surface of the housing. A method of manufacturing the housing is also provided, the method includes these steps: forming a housing; grinding the housing; polishing the housing; and forming the gripping portions on the housing.

Abstract: A laser engraving mechanism (100) for engraving a workpiece (16) includes an image receiver (12), an image processor (13), an engraving controller (14), and a laser emitting member (15). The image receiver screens the workpiece to form an image of the workpiece and transforms the image of the workpiece into electronic image signals. The image processor is connected to the image receiver. The image processor saves a group of datum coordinates, forms a group of engraving coordinates according to the electronic image signals, and compares the engraving coordinates with the datum coordinates. The engraving controller is connected to the image processor. The laser emitting member is connected to the engraving controller, and the engraving controller instructs the laser emitting member to engrave the workpiece based on a comparison of results between the engraving coordinates and the datum coordinates.

Abstract: A mechanical engraver (10) includes a rotating plate (11), a first cutting tool (12), and a second cutting tool (13). The rotating plate has a rotating axis. The first cutting tool is mounted on the rotating plate and includes a first knifepoint (1221). The second cutting tool is mounted on the rotating plate and includes a second knifepoint (1321). A distance between the first knifepoint and the rotating axis is longer than a distance between the second knifepoint and the rotating axis. A distance between the first knifepoint and a bottom of the rotating plate is shorter than a distance between the second knifepoint and the bottom of the rotating plate. The first cutting tool includes a straight first cutting edge (1222). The second cutting tool includes a second cutting edge (1322) and a third cutting edge (1323), forming, at the second knifepoint, a cutting angle ? less than 180°.

Abstract: A rack apparatus (100) includes a frame (10), a plurality of supporting members (106), and a plurality of retaining members (12). The supporting members are arranged/mounted on/to the frame. The retaining members are mounted on the supporting members. Each retaining member includes a fixing piece (120) and two supporting pieces (122, 124). The fixing piece has a notched mounting portion. The two supporting pieces are respectively positioned at an opposite side of the fixing piece. Each supporting piece forms a retaining portion (i.e., a through hole therein). The notched mounting portion and the retaining portions together help retain a workpiece within a given retaining member.

Abstract: A method for manufacturing a metallic shell (100) from a base shell made of metal is provided. The metallic shell includes an grippable portion (12). The method includes six steps, as follows. The base shell is formed (S1). The base shell is ground (S2) and burnished (S3) and then washed and cleaned (S4). The grippable portion of the metallic shell is engraved (S5) to yield a texture approximating a wood grain. Finally, the base shell is anodically treated (S6).

Abstract: A method of modifying a polymeric substrate, such as polyethylene terephthalate and nylon 66, imparts water repellency and lubricity, and provides the additional benefit of reducing the soiling of fabrics. The method includes combining the polymeric substrate with a dense or liquified gas, such as carbon dioxide or sulfur hexafluoride, and a fluorinated compound, such as a fluorinated polyether.