Patents by Inventor Hung-Chang W. Huang

Hung-Chang W. Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6479169
    Abstract: A magnetic recording medium using a nonmagnetic interlayer in between a Cr-base underlayer and a Co magnetic layer is disclosed. The nonmagnetic interlayer comprises Co1−&agr;−&bgr;−&ggr;−&zgr;Cr&agr;X&bgr;Y&ggr;Z&zgr;. X is a material selected from Ni or Fe so as to substitute a portion of Cr composition. Y is a material selected from materials which can form a solid solution with at least one of list materials consisting of Ni, Fe, Co, and Cr. The Y materials added in the interlayer is to adjust the lattice mismatch of interface between the interlayer and the underlayer to a magnitude so that the interlayer formed on the underlayer at least is a texture layer, an epitaxial layer is best preferred. However, Z is a material which is insoluble with any of above list materials, Cr, Co, X, and Y in a solid state so as to form precipitates, thereby inhibiting the grain growth. In a preferred embodiment, the &agr;, &bgr;, &ggr;, and &zgr; are about 25-41%, 0.1-5%, 0.1-5%, and 0.
    Type: Grant
    Filed: March 16, 2000
    Date of Patent: November 12, 2002
    Assignee: Trace Storage Technology Corp.
    Inventors: Jack Chang, Gina Liang, Wu-Shun Wang, James W. Liang, Hung-Chang W. Huang
  • Patent number: 5482785
    Abstract: Thin film media characterized by the utilization of a substantially peritectic seed alloy layer which is sputter deposited so as to provide dispersed, substantially peritectic and homogenous globules underlying subsequently deposited media layers. These media layers may include a metal layer such as chrome and a magnetic layer such as an alloy of cobalt, chromium, and platinum and possibly other ingredients.
    Type: Grant
    Filed: November 29, 1994
    Date of Patent: January 9, 1996
    Assignee: StorMedia, Inc.
    Inventors: Nader Mahvan, Atef H. Eltoukhy, Edward Teng, Hung-Chang W. Huang
  • Patent number: 5436047
    Abstract: A magnetic recording disk has an improved surface film formed on the disk blank. A sputter-deposited surface coating containing nickel, chromium and oxygen (Ni--Cr--O) is formed on a AlMg disk blank, after which a cobalt alloy magnetic layer is formed over the Ni--Cr--O coating and a protective overcoat is formed over magnetic layer. The use of the Ni--Cr--O coating on the disk blank eliminates the need for a wet electroless deposition process for creation of a surface coating and results in an inherent texturing of the subsequently deposited magnetic film and protective overcoat which conform to the surface texture of the sputter-deposited Ni--Cr--O. The disks made with the Ni--Cr--O surface film exhibit a very low static friction force between the air-bearing slider and the disk surface when the disks are used in contact start/stop (CSS) disk files.
    Type: Grant
    Filed: October 15, 1993
    Date of Patent: July 25, 1995
    Assignee: International Business Machines Corporation
    Inventors: James K. Howard, Hung-Chang W. Huang, Cherngye Hwang, Anthony W. Wu
  • Patent number: 5421975
    Abstract: Thin film media characterized by the utilization of a substantially peritectic seed alloy layer which is sputter deposited so as to provide dispersed, substantially peritectic and homogenous globules underlying subsequently deposited media layers. These media layers may include a metal layer such as chrome and a magnetic layer such as an alloy of cobalt, chromium, and platinum and possibly other ingredients.
    Type: Grant
    Filed: October 13, 1992
    Date of Patent: June 6, 1995
    Inventors: Nader Mahvan, Atef H. Eltoukhy, Edward Teng, Hung-Chang W. Huang
  • Patent number: 5268806
    Abstract: A magnetoresistive (MR) sensor having electrically conductive lead structures which are in electrical contact with the MR element at spaced positions. The lead structures comprise a thin film layer of body-centered-cubic tantalum which is separated from the MR element by a thin film seed layer formed of a material taken from the group consisting of TiW, TaW, Cr and W.
    Type: Grant
    Filed: January 21, 1992
    Date of Patent: December 7, 1993
    Assignee: International Business Machines Corporation
    Inventors: Wolfgang M. Goubau, James K. Howard, Hung-Chang W. Huang, Cherngye Hwang, Robert O. Schwenker, James C. Uy
  • Patent number: 5008216
    Abstract: A method for forming contact studs to connect the substrate component devices to the overlying wiring patterns is disclosed herein. The contact studs are formed by a combination of blanket depositing an adhesive and reactive layer into the contact opening. Onto said adhesive and reactive layer is deposited a seed layer and said contact stud is completed by filling the contact opening with a third metal layer. Preferably, the adhesive and reactive layer is a transistion metal and the seed and filler layers are refractory metals.
    Type: Grant
    Filed: December 11, 1989
    Date of Patent: April 16, 1991
    Assignee: International Business Machines Corporation
    Inventors: Hung-Chang W. Huang, Paul A. Totta
  • Patent number: 5008730
    Abstract: A method for forming contact studs to connect the substrate component devices to the overlying wiring patterns is disclosed herein. The contact studs are formed by a combination of blanket depositing an adhesive and reactive layer into the contact opening. Onto said adhesive and reactive layer is deposited a seed layer and said contact stud is completed by filling the contact opening with a third metal layer. Preferably, the adhesive and reactive layer is a transition metal and the seen and fillter layers are refractory metals.
    Type: Grant
    Filed: December 18, 1989
    Date of Patent: April 16, 1991
    Assignee: International Business Machines Corporation
    Inventors: Hung-Chang W. Huang, Paul A. Totta
  • Patent number: 4914538
    Abstract: A magnetoresistive sensor having spaced electrically conductive lead structures comprising a thin film of tungsten having a thin film overlayer, or, alternatively a thin film underlayer and a thin film overlayer, with both the thin film underlayer and the thin film overlayer formed of a material taken from the groups consisting of Ti, Ta, Cr, Zr, Hf, and TiW.
    Type: Grant
    Filed: August 18, 1988
    Date of Patent: April 3, 1990
    Assignee: International Business Machines Corporation
    Inventors: James K. Howard, Hung-Chang W. Huang, Cherngye Hwang
  • Patent number: 4295147
    Abstract: Thin film electrodes particularly suited for Josephson devices of improved thermal cyclability are prepared by depositing thin films of superconductive metal and an intermetallic compound former on a substrate held at a temperature below about 100.degree. K. and at a pressure below about 1.times.10.sup.-7 Torr so that intermetallic compound formation occurs at the grain boundaries of the metal to inhibit grain growth. The thin film electrodes are characterized by median grain size <100 nm.
    Type: Grant
    Filed: February 1, 1980
    Date of Patent: October 13, 1981
    Assignee: International Business Machines Corp.
    Inventors: Charles J. Kircher, Hung-Chang W. Huang, Masanori Murakami