Abstract: A semiconductor structure includes a first transistor and a second transistor, and a dielectric structure separating the first transistor from the second transistor. The first transistor includes a first gate structure and the second transistor includes a second gate structure. The dielectric structure includes a first portion sandwiched between the first gate structure and the second gate structure along a first direction, and a second portion protruding from the first portion along a second direction perpendicular to the first direction. The first portion has a first width and the second portion has a second width less than the first width, the first width and the second width being along the first direction, and the first portion has a first height and the second portion has a second height less than the first height.

Abstract: SRAM structures are provided. An SRAM structure includes a substrate, a P-type well region over the substrate, an N-type well region over the substrate, a PMOS transistor in the N-type well region, an NMOS transistor in the P-type well region, an isolation region over the boundary between the P-type well region and the N-type well region, and a dielectric structure formed in the isolation region and extending from the isolation region to the boundary between the P-type well region and the N-type well region. The depth of the dielectric structure is greater than that of the isolation region. The PMOS transistor is separated from the NMOS transistor by the isolation region.

Abstract: A semiconductor device and method of manufacture are provided. In some embodiments a treatment process is utilized to treat a work function layer. The treatment prevents excessive oxidation of the work function layer during subsequent processing steps, such as application of a subsequent photoresist material, thereby allowing the work function layer to be thinner than otherwise.

Abstract: A semiconductor memory structure includes a ferroelectric layer and a channel layer formed over the ferroelectric layer. The structure also includes a source structure and a drain structure formed over the channel layer. The structure further includes a first isolation structure formed between the source structure and the drain structure. The source structure extends over the cap layer and towards the drain structure.

Abstract: A plasma flood gun includes a filament to emit first electrons based on a first filament current induced in the filament to heat the filament to a first temperature at a first time. The first electrons interact with an inert gas in an arc plasma chamber to generate a first plasma. A filament resistance meter measures a first filament resistance of the filament, in-situ, during generation of the first plasma. A filament current source adjusts, based on the first filament resistance, the first filament current induced in the filament at the first time to a second filament current induced in the filament at a second time to generate a second plasma in the arc plasma chamber at the second time.

Abstract: A structure includes a semiconductor substrate including a first semiconductor region and a second semiconductor region, a first transistor in the first semiconductor region, and a second transistor in the second semiconductor region. The first transistor includes a first gate dielectric over the first semiconductor region, a first work function layer over and contacting the first gate dielectric, and a first conductive region over the first work function layer. The second transistor includes a second gate dielectric over the second semiconductor region, a second work function layer over and contacting the second gate dielectric, wherein the first work function layer and the second work function layer have different work functions, and a second conductive region over the second work function layer.

Abstract: A plasma flood gun includes a filament to emit first electrons based on a first filament current induced in the filament to heat the filament to a first temperature at a first time. The first electrons interact with an inert gas in an arc plasma chamber to generate a first plasma. A filament resistance meter measures a first filament resistance of the filament, in-situ, during generation of the first plasma. A filament current source adjusts, based on the first filament resistance, the first filament current induced in the filament at the first time to a second filament current induced in the filament at a second time to generate a second plasma in the arc plasma chamber at the second time.

Abstract: A flexible electronic device includes a first encapsulation layer and a sensing structure. The sensing structure is disposed on the first encapsulation layer and includes a substrate, a plurality of first sensing layer, a plurality of second sensing layer, a first groove and a second groove. The substrate includes a main body, a plurality of first branches and a plurality of second branches. The main body has a first side and a second side opposite to each other. The first branches connect the first side. The second branches connect the second side. The first sensing layers are disposed on the first branches. The second sensing layers are disposed on the second branches. The first groove is disposed between the first branches. The second groove is disposed between the second branches.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.

Abstract: A structure includes a semiconductor substrate including a first semiconductor region and a second semiconductor region, a first transistor in the first semiconductor region, and a second transistor in the second semiconductor region. The first transistor includes a first gate dielectric over the first semiconductor region, a first work function layer over and contacting the first gate dielectric, and a first conductive region over the first work function layer. The second transistor includes a second gate dielectric over the second semiconductor region, a second work function layer over and contacting the second gate dielectric, wherein the first work function layer and the second work function layer have different work functions, and a second conductive region over the second work function layer.

Abstract: Disclosed are compositions comprising a) one or more polycarbonates; b) one or more first colorants; c) one or more flame retardants; and d) one or more particles having a melting point above the temperature at which polycarbonates are processed wherein the particles are coated with an organic polymer having a melting point above the processing temperature of the one or more polycarbonates; wherein the composition when molded exhibits a flecked appearance. The particles have a second colorant bound to the surface of the particles by the organic polymer. The organic polymer may be crosslinked. The one or more polycarbonates may comprise post-consumer recycled polycarbonates. Disclosed are molded products prepared from the disclosed compositions. The molded products exhibit good properties as disclosed herein. The molded products have a flecked appearance.

Abstract: Disclosed are compositions comprising a) one or more polycarbonates; b) one or more first colorants; c) one or more flame retardants; and d) one or more particles having a melting point above the temperature at which polycarbonates are processed wherein the particles are coated with an organic polymer having a melting point above the processing temperature of the one or more polycarbonates; wherein the composition when molded exhibits a flecked appearance. The particles have a second colorant bound to the surface of the particles by the organic polymer. The organic polymer may be crosslinked. The one or more polycarbonates may comprise post-consumer recycled polycarbonates. Disclosed are molded products prepared from the disclosed compositions. The molded products exhibit good properties as disclosed herein. The molded products have a flecked appearance.

Abstract: Polycarbonate compositions having good flame retardancy and high light transmittance are achieved using the combination of a polycarbonate, a charring salt flame retardant, and a low molecular weight silicone compound. Light diffusing compositions are achieved using a particulate light diffusing agent. The compositions preferably meet or exceed one or more (and most preferably all) of the following flame retardancy standards: (i) UL-94 V-0 (t=1 mm); (ii) UL-94 5VA (t=2.5 mm); (iii) UL-94 5VB (t=2.5 mm).

Abstract: Polycarbonate compositions having good flame retardancy and high light transmittance are achieved using the combination of a polycarbonate, a charring salt flame retardant, and a low molecular weight silicone compound. Light diffusing compositions are achieved using a particulate light diffusing agent. The compositions preferably meet or exceed one or more (and most preferably all) of the following flame retardancy standards: (i) UL-94 V-0 (t=1 mm); (ii) UL-94 5VA (t=2.5 mm); (iii) UL-94 5VB (t=2.5 mm).

Abstract: A flat display panel is provided. The flat display panel includes a substrate, a first driving line, a second driving line, and an ESD protection circuit. The ESD protection circuit includes a first crossing line, a second crossing line, and a first ESD protection device. The first crossing line crosses over the first driving line in a first crossing place. The second crossing line crosses over the second driving line in a second crossing place. The first ESD protection device is electrically connected to the first crossing line and to the second crossing line. Therefore, the flat display panel can avoid current leakage occurring when the first crossing place or the second crossing place is damaged.

Abstract: An LCD panel includes a group of data pads. The group of data pads includes at least a Vcom pad and a switch pad. The Vcom pad includes a first part and a second part. The switch pad includes a semiconductor layer connected between the first part and the second part. The first pad is coupled to the semiconductor layer, but formed on a different layer from the semiconductor layer. The semiconductor layer can be turned on by a voltage on the first pad, thereby turning on the Vcom pad.

Abstract: A flat display panel is provided. The flat display panel includes a substrate, a first driving line, a second driving line, and an ESD protection circuit. The ESD protection circuit includes a first crossing line, a second crossing line, and a first ESD protection device. The first crossing line crosses over the first driving line in a first crossing place. The second crossing line crosses over the second driving line in a second crossing place. The first ESD protection device is electrically connected to the first crossing line and to the second crossing line. Therefore, the flat display panel can avoid current leakage occurring when the first crossing place or the second crossing place is damaged.

Abstract: A device for detecting methanol concentration in an alcohol-containing solution is disclosed. The device implements an electrochemical bio-detector based on a two-enzyme system to quickly, easily and accurately measure methanol concentration in an alcohol-containing solution at a relatively low cost. A method for detecting methanol concentration in a sample using the same device is also disclosed.