Patents by Inventor Hung-Che Chen
Hung-Che Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240145581Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.Type: ApplicationFiled: January 4, 2024Publication date: May 2, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ya-Wen CHIU, Yi Che CHAN, Lun-Kuang TAN, Zheng-Yang PAN, Cheng-Po CHAU, Pin-Chu LIANG, Hung-Yao CHEN, De-Wei YU, Yi-Cheng LI
-
Patent number: 11925017Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.Type: GrantFiled: January 13, 2020Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Hsuan Liu, Chiang-Ming Chuang, Chih-Ming Lee, Kun-Tsang Chuang, Hung-Che Liao, Chia-Ming Pan, Hsin-Chi Chen
-
Patent number: 11699776Abstract: A light-emitting element includes a substrate including a first side, a second side and a third side connecting the first side and the second side; a light-emitting semiconductor stack on the substrate and including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer and including a contact area and a first extension area; a second electrode on the second semiconductor layer; a protection layer on the light-emitting semiconductor stack and including a first through hole exposing the first electrode and a second through hole exposing the second electrode; a first conductive part on the protection layer and electrically connected to the first electrode; and a second conductive part on the protection layer and electrically connected to the second electrode, wherein the second conductive part comprises a projected area on the light-emitting semiconductor stType: GrantFiled: February 25, 2021Date of Patent: July 11, 2023Assignee: EPISTAR CORPORATIONInventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
-
Publication number: 20210202797Abstract: A light-emitting element includes a substrate including a first side, a second side and a third side connecting the first side and the second side; a light-emitting semiconductor stack on the substrate and including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer and including a contact area and a first extension area; a second electrode on the second semiconductor layer; a protection layer on the light-emitting semiconductor stack and including a first through hole exposing the first electrode and a second through hole exposing the second electrode; a first conductive part on the protection layer and electrically connected to the first electrode; and a second conductive part on the protection layer and electrically connected to the second electrode, wherein the second conductive part comprises a projected area on the light-emitting semiconductor stType: ApplicationFiled: February 25, 2021Publication date: July 1, 2021Inventors: Schang-Jing HON, Chao-Hsing CHEN, Tsun-Kai KO, Chien-Fu SHEN, Jia-Kuen WANG, Hung-Che CHEN
-
Patent number: 10964847Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a barrier layer formed on the reflective stack; a protection layer formed on the barrier layer, comprising a first through hole and a second through hole; a first height balancer filled in the first through hole and formed on the protection layer; a second height balancer filled in the second through hole and formed on the protection layer; and a conductive contact layer comprising a first conductive part formed on the first height balancer and a second conductive part formed on the second height balancer.Type: GrantFiled: June 19, 2019Date of Patent: March 30, 2021Assignee: EPISTAR CORPORATIONInventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
-
Publication number: 20190312179Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a barrier layer formed on the reflective stack; a protection layer formed on the barrier layer, comprising a first through hole and a second through hole; a first height balancer filled in the first through hole and formed on the protection layer; a second height balancer filled in the second through hole and formed on the protection layer; and a conductive contact layer comprising a first conductive part formed on the first height balancer and a second conductive part formed on the second height balancer.Type: ApplicationFiled: June 19, 2019Publication date: October 10, 2019Inventors: Schang-Jing HON, Chao-Hsing CHEN, Tsun-Kai KO, Chien-Fu SHEN, Jia-Kuen WANG, Hung-Che CHEN
-
Patent number: 10374130Abstract: A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.Type: GrantFiled: September 28, 2016Date of Patent: August 6, 2019Assignee: EPISTAR CORPORATIONInventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
-
Publication number: 20170040493Abstract: An optoelectronic device comprises a semiconductor stack, a first metal layer arranged above the semiconductor stack and having a first major plane and a first boundary with a first gradually reduced thickness, and a second metal layer arranged above the first metal layer and having a second major plane and a second boundary with a second gradually reduced thickness, wherein the second major plane parallels to the first major plane and the second boundary exceeds the first boundary, wherein a first angle formed between the first boundary and the semiconductor stack, and/or a second angle formed between the second boundary and the semiconductor stack, is/are less than 10°.Type: ApplicationFiled: September 21, 2016Publication date: February 9, 2017Inventors: Jia-Kuen WANG, Chien-Fu SHEN, Hung-Che CHEN, Chao-Hsing CHEN
-
Publication number: 20170018684Abstract: A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.Type: ApplicationFiled: September 28, 2016Publication date: January 19, 2017Inventors: Schang-Jing HON, Chao-Hsing CHEN, Tsun-Kai KO, Chien-Fu SHEN, Jia-Kuen WANG, Hung-Che CHEN
-
Patent number: 9466767Abstract: An optoelectronic device comprises a semiconductor stack, a first metal layer formed above the semiconductor stack, wherein the first metal layer comprises a first major plane and a first boundary with a gradually reduced thickness, and a second metal layer formed above the first metal layer, wherein the second metal layer comprise a second major plane paralleling to the first major plane and a second boundary with a gradually reduced thickness, and the second boundary of the second metal layer exceeds the first boundary of the first metal layer.Type: GrantFiled: November 10, 2014Date of Patent: October 11, 2016Assignee: EPISTAR CORPORATIONInventors: Jia-Kuen Wang, Chien-Fu Shen, Hung-Che Chen, Chao-Hsing Chen
-
Patent number: 9461208Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising multiple contact areas and multiple extension areas, wherein the multiple contact areas are physically separated from one another; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the first conductive part and the second conductive part each comprises a concave-convex profile.Type: GrantFiled: February 23, 2016Date of Patent: October 4, 2016Assignee: EPISTAR CORPORATIONInventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
-
Publication number: 20160172543Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising multiple contact areas and multiple extension areas, wherein the multiple contact areas are physically separated from one another; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the first conductive part and the second conductive part each comprises a concave-convex profile.Type: ApplicationFiled: February 23, 2016Publication date: June 16, 2016Inventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
-
Patent number: 9306123Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising an contact area and an extension electrically connected to the first semiconductor layer, wherein the extension is connected to the contact area; a second electrode on the second semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first electrode and the second electrode, wherein the extension is formed beyond a projected area of the second conductive part and not covered by the first conductive part, and the contact area is covered by the first conductive part.Type: GrantFiled: August 17, 2015Date of Patent: April 5, 2016Assignee: EPISTAR CORPORATIONInventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
-
Publication number: 20150357524Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising an contact area and an extension electrically connected to the first semiconductor layer, wherein the extension is connected to the contact area; a second electrode on the second semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first electrode and the second electrode, wherein the extension is formed beyond a projected area of the second conductive part and not covered by the first conductive part, and the contact area is covered by the first conductive part.Type: ApplicationFiled: August 17, 2015Publication date: December 10, 2015Inventors: Schang-Jing HON, Chao-Hsing CHEN, Tsun-Kai KO, Chien-Fu SHEN, Jia-Kuen WANG, Hung-Che CHEN
-
Patent number: 9159881Abstract: Disclosed is a light-emitting device comprising: a semiconductor stack layer; a reflective layer on the semiconductor stack layer; a first buffer layer comprising a compound comprising a metallic element and a non-metallic element on the reflective layer; a first electrode; and an electrical insulating layer disposed between the first buffer layer and the first electrode.Type: GrantFiled: August 28, 2012Date of Patent: October 13, 2015Assignee: EPISTAR CORPORATIONInventors: Jia-Kuen Wang, Chien-Fu Shen, Chao-Hsing Chen, Yu-Chen Yang, Hui-Chun Yeh, Yi-Wen Ku, Hung-Che Chen, Chih-Nan Lin
-
Patent number: 9153738Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a plurality of extensions formed on the first semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein one of the plurality of extensions is formed beyond a projected area of the second conductive part and not covered by the first conductive part.Type: GrantFiled: May 21, 2015Date of Patent: October 6, 2015Assignee: Epistar CorporationInventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
-
Patent number: D740240Type: GrantFiled: January 8, 2015Date of Patent: October 6, 2015Assignee: Epistar CorporationInventors: Chao Hsing Chen, Tsun Kai Ko, Chien Fu Shen, Jia Kuen Wang, Hung Che Chen, Chun Teng Ko, Chien Chih Liao
-
Patent number: D743354Type: GrantFiled: January 31, 2014Date of Patent: November 17, 2015Assignee: EPISTAR CORPORATIONInventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
-
Patent number: D760179Type: GrantFiled: October 22, 2014Date of Patent: June 28, 2016Assignee: EPISTAR CORPORATIONInventors: Chao Hsing Chen, Tsun Kai Ko, Chien Fu Shen, Jia Kuen Wang, Hung Che Chen, Chun Teng Ko, Chien Chih Liao
-
Patent number: D764422Type: GrantFiled: October 13, 2015Date of Patent: August 23, 2016Assignee: EPISTAR CORPORATIONInventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen