Patents by Inventor Hung-Che Chen

Hung-Che Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200096734
    Abstract: An imaging optical system includes six lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. Each of the six lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. At least one lens element of the imaging optical system has at least one aspheric surface having at least one inflection point.
    Type: Application
    Filed: November 13, 2018
    Publication date: March 26, 2020
    Applicant: LARGAN PRECISION CO.,LTD.
    Inventors: Chun-Che HSUEH, Hung-Shuo CHEN, Yu-Tai TSENG, Tzu-Chieh KUO
  • Publication number: 20200083185
    Abstract: Methods of forming connectors and packaged semiconductor devices are disclosed. In some embodiments, a connector is formed by forming a first photoresist layer over an interconnect structure, and patterning the first photoresist layer. The patterned first photoresist layer is used to form a first opening in an interconnect structure. The patterned first photoresist is removed, and a second photoresist layer is formed over the interconnect structure and in the first opening. The second photoresist layer is patterned to form a second opening over the interconnect structure in the first opening. The second opening is narrower than the first opening. At least one metal layer is plated through the patterned second photoresist layer to form the connector.
    Type: Application
    Filed: November 11, 2019
    Publication date: March 12, 2020
    Inventors: Jung Wei Cheng, Hai-Ming Chen, Chien-Hsun Lee, Hao-Cheng Hou, Hung-Jen Lin, Chun-Chih Chuang, Ming-Che Liu, Tsung-Ding Wang
  • Patent number: 10535670
    Abstract: A method of manufacturing a non-volatile memory is described. A substrate including a first region and a second region located at periphery of the first region is provided. A plurality of stacked structures are formed on the first region of the substrate. A wall structure is formed on the second region of the substrate. A conductive layer is formed over the substrate. A bottom anti-reflective coating is formed over the conductive layer. The bottom anti-reflective coating and the conductive layer are etched back. The conductive layer is patterned.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: January 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Hsuan Liu, Chiang-Ming Chuang, Chih-Ming Lee, Kun-Tsang Chuang, Hung-Che Liao, Chia-Ming Pan, Hsin-Chi Chen
  • Publication number: 20200004089
    Abstract: A display device includes a plurality of transparent voltage-dividing common electrodes and a plurality of pixel units. The transparent voltage-dividing common electrodes are electrically isolated from each other in a first direction. Each of the pixel units includes a first pixel electrode, a second pixel electrode, and a voltage-dividing switch. The first pixel electrode is configured to receive a data voltage. The second pixel electrode is configured to receive the data voltage. The voltage-dividing switch is configured to divide the data voltage on the second pixel electrode to one of the transparent voltage-dividing common electrodes.
    Type: Application
    Filed: June 28, 2019
    Publication date: January 2, 2020
    Inventors: SHENG-JU HO, CHENG-HAN TSAO, SHANG-JIE WU, YI-JUNG CHEN, HUNG-CHE LIN, SHUN-LING HOU, NAI-WEN CHANG
  • Patent number: 10522486
    Abstract: Methods of forming connectors and packaged semiconductor devices are disclosed. In some embodiments, a connector is formed by forming a first photoresist layer over an interconnect structure, and patterning the first photoresist layer. The patterned first photoresist layer is used to form a first opening in an interconnect structure. The patterned first photoresist is removed, and a second photoresist layer is formed over the interconnect structure and in the first opening. The second photoresist layer is patterned to form a second opening over the interconnect structure in the first opening. The second opening is narrower than the first opening. At least one metal layer is plated through the patterned second photoresist layer to form the connector.
    Type: Grant
    Filed: June 26, 2017
    Date of Patent: December 31, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung Wei Cheng, Hai-Ming Chen, Chien-Hsun Lee, Hao-Cheng Hou, Hung-Jen Lin, Chun-Chih Chuang, Ming-Che Liu, Tsung-Ding Wang
  • Patent number: 10515853
    Abstract: A method of wafer dicing is provided. The method of wafer dicing includes: providing a wafer, wherein the wafer includes a substrate, dies formed in and over the substrate and a scribe line structure located in a scribe line region between adjacent dies; removing a portion of the scribe line structure around a test device in the scribe line structure; attaching a front side of the wafer with a first tape; removing a portion of the substrate overlapping with the scribe line region from a back side of the wafer; attaching the back side of the wafer with a second tape; and removing the first tape along with the remaining portion of the scribe line structure attached thereon, leaving the dies separately attached on the second tape.
    Type: Grant
    Filed: December 10, 2018
    Date of Patent: December 24, 2019
    Assignee: Winbond Electronics Corp.
    Inventors: Ching-Wei Chen, Cheng-Hong Wei, Shuo-Che Chang, Hung-Sheng Chen, Hsin-Hung Chou
  • Publication number: 20190371916
    Abstract: A semiconductor structure having a metal gate includes a dielectric layer. The dielectric layer having a recess is disposed on a substrate, wherein the dielectric layer has a top part and a bottom part, and the tensile stress of the top part is larger than the tensile stress of the bottom part, thereby the recess having a sidewall profile tapering from bottom to top. The present invention also provides a method of forming said semiconductor structure.
    Type: Application
    Filed: June 26, 2018
    Publication date: December 5, 2019
    Inventors: Jing-Yi Lin, Yi-Wen Chen, Hung-Yi Wu, Ping-Wei Huang, Shao-Wei Wang, Yueh-Chi Chuang, Hung-Jen Huang, Hao-Che Feng
  • Publication number: 20190352961
    Abstract: A retainer includes an abutting portion, a protrusion integrally extended from a side of the abutting portion and having a through hole for a lift pull cord to be slidably threaded therethrough, and two opposite upper cantilever portions and two opposite lower cantilever portions integrally extended from another side of the abutting portion. A first positioning groove is provided between the upper and lower cantilever portions for a slat to be embedded in the first positioning groove. Second and third positioning grooves perpendicularly communicating with the first positioning groove are provided between the upper cantilever portions and between the lower cantilever portions respectively for a tilt cord to be inserted in the second and third positioning grooves.
    Type: Application
    Filed: May 15, 2019
    Publication date: November 21, 2019
    Inventors: Hung-Hao CHEN, Ming-Che TSAI
  • Publication number: 20190323289
    Abstract: A three-wheeled cord rolling device includes a driving unit having two torsion spring wheels engaged with each other and a torsion spring connecting the torsion spring wheels, and a cord rolling unit having a cord rolling wheel and two lift transmission cords. The cord rolling wheel is engaged with one of the torsion spring wheels, thereby rotatable with them synchronously. The cord rolling wheel has an axle having upper and lower axial portions and a separating portion connecting the upper and lower axial portions. The lift transmission cords are disposed on the upper and lower axial portions of the axle respectively, thereby capable of being rolled up or released from the upper and lower axial portions of the axle by the rotation of the cord rolling wheel.
    Type: Application
    Filed: April 16, 2019
    Publication date: October 24, 2019
    Inventors: Hung-Hao CHEN, Ming-Che TSAI
  • Publication number: 20190312179
    Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a barrier layer formed on the reflective stack; a protection layer formed on the barrier layer, comprising a first through hole and a second through hole; a first height balancer filled in the first through hole and formed on the protection layer; a second height balancer filled in the second through hole and formed on the protection layer; and a conductive contact layer comprising a first conductive part formed on the first height balancer and a second conductive part formed on the second height balancer.
    Type: Application
    Filed: June 19, 2019
    Publication date: October 10, 2019
    Inventors: Schang-Jing HON, Chao-Hsing CHEN, Tsun-Kai KO, Chien-Fu SHEN, Jia-Kuen WANG, Hung-Che CHEN
  • Patent number: 10403479
    Abstract: A field emission enhanced handheld atmospheric pressure plasma generator includes: a main body having a positioning slot, a receiving slot and a gas inlet; a cathode body having a first part positioned in the positioning slot; an anode frame and a positioning member both accommodated within the receiving slot; and a cover having a plasma channel and covering the main body. One or each of two sidewalls of the anode frame and the cathode body facing each other has a nanocarbon material layer. A second part of the cathode body passes through the anode frame, is positioned and fixed by the positioning slot and is separated from the anode frame by a gap. The anode frame and the cathode body receive radio frequency power to make a gas, which enters the receiving slot from the gas inlet and passes through the gap, become plasma outputted from the plasma channel.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: September 3, 2019
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Hung-Yin Tsai, Tzu-Yun Lin, Yi-You Chen, Shang Ru Wu, Tung Che Lee
  • Publication number: 20190259771
    Abstract: A semiconductor structure includes a semiconductor substrate, at least one raised dummy feature, at least one memory cell, and at least one word line. The raised dummy feature is present on the semiconductor substrate and defines a cell region on the semiconductor substrate. The memory cell is present on the cell region. The word line is present adjacent to the memory cell.
    Type: Application
    Filed: May 6, 2019
    Publication date: August 22, 2019
    Inventors: Chiang-Ming Chuang, Chien-Hsuan Liu, Chih-Ming Lee, Kun-Tsang Chuang, Hung-Che Liao, Hsin-Chi Chen
  • Patent number: 10374130
    Abstract: A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: August 6, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
  • Publication number: 20190162019
    Abstract: A dual-torsion-spring cord rolling device includes driving and transmission units. The driving unit has first and second torsion spring gears engaged with each other, a first torsion spring connecting the first and second torsion spring gears, a wheel adjacent to the first torsion spring gear, and a second torsion spring connecting the second torsion spring gear and the wheel. The transmission unit has first and second transmission gears rotatable synchronously by the driving of the second torsion spring gear, and two lift transmission cords attached to the first and second transmission gears respectively.
    Type: Application
    Filed: November 21, 2018
    Publication date: May 30, 2019
    Inventors: Hung-Hao CHEN, Ming-Che TSAI
  • Publication number: 20170040493
    Abstract: An optoelectronic device comprises a semiconductor stack, a first metal layer arranged above the semiconductor stack and having a first major plane and a first boundary with a first gradually reduced thickness, and a second metal layer arranged above the first metal layer and having a second major plane and a second boundary with a second gradually reduced thickness, wherein the second major plane parallels to the first major plane and the second boundary exceeds the first boundary, wherein a first angle formed between the first boundary and the semiconductor stack, and/or a second angle formed between the second boundary and the semiconductor stack, is/are less than 10°.
    Type: Application
    Filed: September 21, 2016
    Publication date: February 9, 2017
    Inventors: Jia-Kuen WANG, Chien-Fu SHEN, Hung-Che CHEN, Chao-Hsing CHEN
  • Publication number: 20170018684
    Abstract: A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.
    Type: Application
    Filed: September 28, 2016
    Publication date: January 19, 2017
    Inventors: Schang-Jing HON, Chao-Hsing CHEN, Tsun-Kai KO, Chien-Fu SHEN, Jia-Kuen WANG, Hung-Che CHEN
  • Patent number: 9466767
    Abstract: An optoelectronic device comprises a semiconductor stack, a first metal layer formed above the semiconductor stack, wherein the first metal layer comprises a first major plane and a first boundary with a gradually reduced thickness, and a second metal layer formed above the first metal layer, wherein the second metal layer comprise a second major plane paralleling to the first major plane and a second boundary with a gradually reduced thickness, and the second boundary of the second metal layer exceeds the first boundary of the first metal layer.
    Type: Grant
    Filed: November 10, 2014
    Date of Patent: October 11, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Jia-Kuen Wang, Chien-Fu Shen, Hung-Che Chen, Chao-Hsing Chen
  • Patent number: 9461208
    Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising multiple contact areas and multiple extension areas, wherein the multiple contact areas are physically separated from one another; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the first conductive part and the second conductive part each comprises a concave-convex profile.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: October 4, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen
  • Patent number: D760179
    Type: Grant
    Filed: October 22, 2014
    Date of Patent: June 28, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chao Hsing Chen, Tsun Kai Ko, Chien Fu Shen, Jia Kuen Wang, Hung Che Chen, Chun Teng Ko, Chien Chih Liao
  • Patent number: D764422
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: August 23, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Schang-Jing Hon, Chao-Hsing Chen, Tsun-Kai Ko, Chien-Fu Shen, Jia-Kuen Wang, Hung-Che Chen