Abstract: An electrical connection structure includes a substrate, a mating layer on the substrate, a connecting pad on the mating layer, an insulating layer on the mating layer and covering the connecting pad, a connecting line on the insulating layer, and a covering layer on the insulating layer and covering the connecting line. The connecting line extends through the insulating layer to electrically couple to the connecting pad. Both the connecting pad and the connecting line are made of metal or alloy. The mating layer includes yttrium oxide films and silicon oxide films alternating with each other.

Abstract: An electrical connection structure includes a substrate, a mating layer on the substrate, a connecting pad on the mating layer, an insulating layer on the mating layer and covering the connecting pad, a connecting line on the insulating layer, and a covering layer on the insulating layer and covering the connecting line. The connecting line extends through the insulating layer to electrically couple to the connecting pad. Both the connecting pad and the connecting line are made of metal or alloy. The mating layer includes yttrium oxide films and silicon oxide films alternating with each other.

Abstract: A method for making an electrical connection structure includes: providing a substrate; forming a mating layer on the substrate; forming a connecting pad on the mating layer; forming a connecting line on the connecting pad and electrically coupling to the connecting pad; forming a covering layer covering the connecting line; and light irradiating the covering layer. Both the connecting pad and the connecting line are made of a metal or an alloy. The mating layer includes alternating yttrium oxide films and silicon oxide films.

Abstract: A method for making an electrical connection structure includes: providing a substrate; forming a mating layer on the substrate; forming a connecting pad on the mating layer; forming a connecting line on the connecting pad and electrically coupling to the connecting pad; forming a covering layer covering the connecting line; and light irradiating the covering layer. Both the connecting pad and the connecting line are made of a metal or an alloy. The mating layer includes alternating yttrium oxide films and silicon oxide films.

Abstract: An electrical connection structure providing better optical properties in a display includes an electrical connection unit, an interference layer, and an electrically insulating cover. The interference layer is positioned on a side of the electrical connection unit. The electrically insulating cover is positioned on the other side of the electrical connection unit and formed to cover the electrical connection unit. The electrical connection unit includes a metal layer to reflect light. The interference layer reflects light emitted from the electrically insulating cover towards a first side of the interference layer. A degree of reflectance of the first side of the interference layer is equal to the reflectance of the metal layer.

Abstract: An electrical connection structure providing better optical properties in a display includes an electrical connection unit, an interference layer, and an electrically insulating cover. The interference layer is positioned on a side of the electrical connection unit. The electrically insulating cover is positioned on the other side of the electrical connection unit and formed to cover the electrical connection unit. The electrical connection unit includes a metal layer to reflect light. The interference layer reflects light emitted from the electrically insulating cover towards a first side of the interference layer. A degree of reflectance of the first side of the interference layer is equal to the reflectance of the metal layer.

Abstract: An electrical connection structure providing better optical properties in a display includes an electrical connection unit, an interference layer, and an electrically insulating cover. The interference layer is positioned on a side of the electrical connection unit. The electrically insulating cover is positioned on the other side of the electrical connection unit and formed to cover the electrical connection unit. The electrical connection unit includes a metal layer to reflect light. The interference layer can reflect light falling on a first region close to the electrically insulating cover. A degree of reflectance of the first region of the interference layer is equal to the reflectance of the metal layer.

Abstract: An electrical connection structure providing better optical properties in a display includes an electrical connection unit, an interference layer, and an electrically insulating cover. The interference layer is positioned on a side of the electrical connection unit. The electrically insulating cover is positioned on the other side of the electrical connection unit and formed to cover the electrical connection unit. The electrical connection unit includes a metal layer to reflect light. The interference layer can reflect light falling on a first region close to the electrically insulating cover. A degree of reflectance of the first region of the interference layer is equal to the reflectance of the metal layer.

Abstract: A method for manufacturing an electronic substrate includes providing a substrate and forming a buffer layer on the substrate. A connection pad is formed on the buffer layer. An electrically insulating layer is formed on the buffer layer. A connection hole is defined in the electrically insulating layer. A connection line made of metal is formed on the electrically insulating layer and extends into the connection hole to electrically couple with the connection pad. An electrically insulating cover is formed on the electrically insulating layer to cover the connection line. A light irradiation is applied to the electrically insulating cover through a mask which has a first translucent region located corresponding to the connection line and a second translucent region located beside the connection line. A transmittance of the first translucent region is lower than a transmittance of the second translucent region.

Abstract: The invention discloses a stacked storage capacitor structure for a LTPS TFT-LCD comprising a processed substrate, a first storage capacitor and a second storage capacitor. The first storage capacitor comprises a first conductive layer, a second conductive layer and a first insulating layer therebetween. The stacked storage capacitor structure further comprises a third conductive layer including a first portion and an extended second portion. The second storage capacitor comprises the second conductive layer, the extended second portion of the third conductive layer and a second insulating layer therebetween.

Abstract: The invention discloses a stacked storage capacitor structure for a LTPS TFT-LCD comprising a processed substrate, a first storage capacitor and a second storage capacitor. The first storage capacitor comprises a first conductive layer, a second conductive layer and a first insulating layer therebetween. The stacked storage capacitor structure further comprises a third conductive layer including a first portion and an extended second portion. The second storage capacitor comprises the second conductive layer, the extended second portion of the third conductive layer and a second insulating layer therebetween.