Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

Abstract: A semiconductor device package includes a substrate having a surface, a conductive element disposed on the surface of the substrate, and an encapsulant disposed on the surface of the substrate and covering the conductive element. The conductive element has an upper surface facing away from the substrate and exposed from the encapsulant. Further, a roughness of the upper surface of the conductive element is greater than a roughness of a side surface of the conductive element.

Abstract: A selective EMI shielding structure for a semiconductor package and a method of fabrication thereof is disclosed. The semiconductor package, comprising: a substrate having a first face; at least one first electronic component mounted adjacent to a first region of the first face; a least one second electronic component mounted adjacent to a second region of the first face; and an encapsulant disposed over the first and the second electronic components, wherein the encapsulant covers directly over the first electronic component, and wherein the encapsulant covers the second electronic component through a layer of conductive material.

Abstract: A semiconductor device package includes a substrate having a surface, a conductive element disposed on the surface of the substrate, and an encapsulant disposed on the surface of the substrate and covering the conductive element. The conductive element has an upper surface facing away from the substrate and exposed from the encapsulant. Further, a roughness of the upper surface of the conductive element is greater than a roughness of a side surface of the conductive element.

Abstract: A semiconductor device package includes a substrate having a surface, a conductive element disposed on the surface of the substrate, and an encapsulant disposed on the surface of the substrate and covering the conductive element. The conductive element has an upper surface facing away from the substrate and exposed from the encapsulant. Further, a roughness of the upper surface of the conductive element is greater than a roughness of a side surface of the conductive element.