Abstract: The present disclosure provides a system and a method for manipulating a robotic device. The system includes a human interface device for obtaining information associated with a position and/or movement of a user's finger using the human interface device; and a robotic device for simulating the position and/or movement of the user's finger in real time. The robotic device is in communication with the human interface device. The operating system of the robotic device of the present disclosure can accurately simulate the functions of human hand.

Abstract: A docking station for a robotic cleaner may include a base, the base including a support and a suction housing, a docking station suction inlet defined in the suction housing, the docking station suction inlet being configured to fluidly couple to the robotic cleaner, and a docking station suction motor, wherein the docking station suction motor is activated after the robotic cleaner is determined to be docked with the docking station and in response to a triggering event.

Abstract: The present disclosure provides a system and a method for manipulating a robotic device. The system includes a human interface device for obtaining information associated with a position and/or movement of a user's finger using the human interface device; and a robotic device for simulating the position and/or movement of the user's finger in real time. The robotic device is in communication with the human interface device. The operating system of the robotic device of the present disclosure can accurately simulate the functions of human hand.

Abstract: A waferless seasoning process is described, which waferless seasoning process is suitable for an etching chamber of an etching machine when the etching environment is so bad that etching cannot be performed. A dry cleaning process with a plasma formed by oxygen and hydrogen bromide is performed to restore the etching environment in the etching chamber.

Abstract: A method is used to form a shallow trench isolation structure. According to the invention, prior to performing CMP on a HDPCVD oxide layer, a smoothing step is performed on the HDPCVD oxide layer to smooth the peak profile of the oxide layer to reduce the moment resulting from the CMP on the peak, and to prevent the later-formed shallow trench isolation structure from being pulled out. In addition, since the invention prevents the later-formed shallow trench isolation structure from being pulled out, the particles resulting from the oxide pulled out from the shallow trench are reduced. Thus, particle damage to the surface of the wafer is reduced.