Patents by Inventor HUNG-CHENG LIAO

HUNG-CHENG LIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11989046
    Abstract: Disclosed herein are related to an integrated circuit to regulate a supply voltage. In one aspect, the integrated circuit includes a metal rail including a first point, at which a first functional circuit is connected, and a second point, at which a second functional circuit is connected. In one aspect, the integrate circuit includes a voltage regulator coupled between the first point of the metal rail and the second point of the metal rail. In one aspect, the voltage regulator senses a voltage at the second point of the metal rail and adjusts a supply voltage at the first point of the metal rail, according to the sensed voltage at the second point of the metal rail.
    Type: Grant
    Filed: February 6, 2023
    Date of Patent: May 21, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Haruki Mori, Hidehiro Fujiwara, Zhi-Hao Chang, Yangsyu Lin, Yu-Hao Hsu, Yen-Huei Chen, Hung-Jen Liao, Chiting Cheng
  • Patent number: 11961777
    Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.
    Type: Grant
    Filed: June 27, 2022
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Chih Chen, Chien-Hsun Lee, Chung-Shi Liu, Hao-Cheng Hou, Hung-Jui Kuo, Jung-Wei Cheng, Tsung-Ding Wang, Yu-Hsiang Hu, Sih-Hao Liao
  • Publication number: 20240079053
    Abstract: In one embodiment, a static random access memory (SRAM) device is provided. The SRAM device includes a memory cell, a bit line couple to the memory cell, a voltage supply line coupled to the memory cell, a control circuitry. The control circuitry is configured to charge a voltage supply line while the voltage supply line is electrically isolated from a bit line. A portion of the charge is transferred from the voltage supply line to the bit line. The voltage supply line is recharged while the voltage supply line is electrically isolated from the bit line storing the transferred portion of the charge. The memory cell is accessed using the recharge on the voltage supply line.
    Type: Application
    Filed: November 10, 2023
    Publication date: March 7, 2024
    Inventors: Mahmut Sinangil, Chiting Cheng, Hung-Jen Liao, Tsung-Yung Chang
  • Publication number: 20230411912
    Abstract: An electrical connector includes: a longitudinal insulating housing; plural differential-pair signal terminals and plural grounding terminals arranged in a longitudinal direction of the insulating housing; and a grounding plate module retained in the insulating housing, wherein the grounding plate module has an electromagnetic interference (EMI) absorber and a grounding plate retained in the EMI absorber, and the grounding plate defines plural grounding fingers extending out of the EMI absorber to contact with corresponding grounding terminals.
    Type: Application
    Filed: June 15, 2023
    Publication date: December 21, 2023
    Inventors: SHIH-WEI HSIAO, GENN-SHENG LEE, HUNG-CHENG LIAO, TSU-YANG WU