Patents by Inventor Hung-Cheng Weng

Hung-Cheng Weng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS device with dual gate insulators and method of forming the same
    Publication number: 20030146478
    Abstract: A MOS device with dual gate insulators has a first gate insulator formed on a predetermined area of a semiconductor substrate, and a second gate insulator formed outside the predetermined area of the semiconductor substrate to surround the first gate insulator. The second gate insulator is thicker than the first gate insulator. In addition, a gate electrode layer is patterned on the dual gate insulators. The bottom center of the gate electrode layer covers the first gate insulator, and the bottom edge of the gate electrode layer extends to cover the second gate insulator.
    Type: Application
    Filed: March 7, 2003
    Publication date: August 7, 2003
    Applicant: SILICON INTEGRATED SYSTEMS CORP.
    Inventors: Wen Ping Yen, Yun Hsiu Chen, Hung-Cheng Weng
  • MOS device with dual gate insulators and method of forming the same
    Patent number: 6551883
    Abstract: A MOS device with dual gate insulators has a first gate insulator formed on a predetermined area of a semiconductor substrate, and a second gate insulator formed outside the predetermined area of the semiconductor substrate to surround the first gate insulator. The second gate insulator is thicker than the first gate insulator. In addition, a gate electrode layer is patterned on the dual gate insulators. The bottom center of the gate electrode layer covers the first gate insulator, and the bottom edge of the gate electrode layer extends to cover the second gate insulator.
    Type: Grant
    Filed: December 27, 2001
    Date of Patent: April 22, 2003
    Assignee: Silicon Integrated Systems Corp.
    Inventors: Wen Ping Yen, Yun Hsiu Chen, Hung-Cheng Weng