Abstract: The present disclosure is directed to a semiconductor device. The semiconductor device includes a substrate, an insulating layer disposed on the substrate, a first conductive feature disposed in the insulating layer, and a capacitor structure disposed on the insulating layer. The capacitor structure includes a first electrode, a first dielectric layer, a second electrode, a second dielectric layer, and a third electrode sequentially stacked. The semiconductor device also includes a first via connected to the first electrode and the third electrode, a second via connected to the second electrode, and a third via connected to the first conductive feature. A part of the first via is disposed in the insulating layer. A portion of the first conductive feature is directly under the capacitor structure.

Abstract: Provided is a semiconductor laser diode, including a GaAs/In P substrate and a multi-layer structure on the GaAs/InP substrate. The multi-layer structure includes a lower epitaxial region, an active region and an upper epitaxial region. The active region comprises a first active layer, an epitaxial region and a second active layer, the epitaxial region is disposed between the first active layer and the second active layer, the first active layer comprises one or more quantum well structures or one or more quantum dot structures, and the second active layer comprises one or more quantum well structures or one or more quantum dot structures.

Abstract: The subject invention relates to two-stage inoculation and two-stage fermentation process which are performed by the inoculation time difference and staged fermentation. In the first stage, yeast, lactic acid bacteria and Acetobacter aceti are inoculated into a fermentation tank to perform primary fermentation to produce primary fermented material. In the second stage, yeast is added into the primary fermented material in a container to perform the secondary fermentation to produce secondary fermented material, and then the secondary fermented material is pasteurized to deactivate yeast, lactic acid bacteria and Acetobacter aceti in the container and stop fermentation reaction. Finally, the secondary fermented material is cooled to ambient temperature to prepare the kombucha fermented beverage preserving active fermentative bacteria and enzyme at ambient temperature. The invention is help to improve the preservation convenience of the kombucha fermented beverage and avoid excessive alcohol concentration.

Abstract: Disclosed herein is a process for producing a peanut milk product, which includes subjecting a milk material to a hydrolysis reaction with lactase and transglucosidase to obtain a milk product, immersing peanut kernels in water to obtain swelled peanut kernels, subjecting the swelled peanut kernels to a steam cooking treatment to obtain steamed peanut kernels, and admixing the milk product with the steamed peanut kernels, followed by subjecting a mixture thus obtained to a heating treatment, so as to obtain the peanut milk product. A method for improving gut health using the peanut milk product and a canned food containing the peanut milk product are also disclosed.

Abstract: The present invention relates to an oligo-saccharide oat liquid composition, an oligo-saccharide oat powder composition and an oligo-saccharide oat drink having improved properties and immunomodulatory efficacy (for example, promotion of proliferation of immune cells), a micro-milling process involving quadri-enzyme hydrolysis for preparing the same, and uses thereof.

Abstract: Provided is a semiconductor laser diode. Although the materials used in the conventional technology can reduce the strain, the selections of materials are relatively limited and the carrier confinement ability is not good. To solve the above-mentioned problems, a phosphorus-containing semiconductor layer is provided in a laser diode. As such, it can effectively reduce the strain of the active region or the total strain of the laser diode, and improve the carrier confinement capability of the active region. Therefore, it can effectively reduce the total strain or significantly improve carrier confinement under appropriate conditions of the laser diode. In some cases, it has the aforesaid effects. The phosphorus-containing semiconductor layer is suitable for an active region with one or more active layers. Especially after the phosphorus-containing semiconductor layer is provided in the active region with multiple active layers, high temperature performance are significantly improved or enhanced.

Abstract: Disclosed herein is a whole-bean soymilk having an increased level of deglycosylated soy isoflavones and a method of preparing thereof. The method includes the steps of subjecting a mixture of a soybean material and water to a comminution treatment so as to obtain a soybean slurry, subjecting the soybean slurry to an enzymatic hydrolysis treatment using a ?-glucosidase to obtain a hydrolysate, and subjecting the hydrolysate to a media milling treatment using a milling medium.

Abstract: Provided is a heterojunction bipolar transistor (HBT), including a GaAs substrate; a subcollector layer stacked on the GaAs substrate, wherein a part of or all of the subcollector layer is formed by N-type group III-V semiconductors doped by at least Te and/or Se; a blocking layer structure directly or indirectly stacked on the subcollector layer, and formed by N-type group III-V semiconductors doped by at least group IV elements, a collector layer stacked on the blocking layer structure, and formed by N-type group III-V semiconductors; a base layer stacked on the collector layer, and formed by P-type group III-V semiconductors; an emitter layer stacked on the base layer and formed by N-type group III-V semiconductors; an emitter cap layer stacked on the emitter layer and formed by N-type group III-V semiconductors; and an ohmic contact layer stacked on the emitter cap layer and formed by N-type group III-V semiconductors.

Abstract: An method for the fabrication of an improved polysilicon buried contact is described. The contact is formed within a trench etched into the silicon substrate. The effective area of the contact is thereby increased over the conventional planar buried contact by an amount equal to the area of the trench walls. For sub-micron sized buried contacts and trenches 1000 to 3000 Angstroms deep this area can be twice that of the conventional planar buried contact. Contacts formed in this fashion are particularly beneficial in the manufacture of static-random-access memory devices(SRAMs) through their application with local-interconnects. They afford a lower contact resistance, manifested by the greater effective contact area, as well as a much reduced risk of open or high resistive contacts due to photomask mis-alignment. The presence of the trench also results in a higher junction capacitance which affords a reduction in soft-error-rates, a notable concern for memory devices.