Patents by Inventor Hung-Chi Wu
Hung-Chi Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12237228Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.Type: GrantFiled: June 30, 2023Date of Patent: February 25, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shao-Jyun Wu, Hung-Chi Wu, Chia-Ching Lee, Pin-Hsuan Yeh, Hung-Chin Chung, Hsien-Ming Lee, Chien-Hao Chen, Sheng-Liang Pan, Huan-Just Lin
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Publication number: 20250049585Abstract: The present disclosure provides a customized module-wise bra with both aesthetic, comfort, and functions assisting a post-mastectomy subject to wear the bra and correct any postural distortion arising from imbalance due to loss of weight from the mastectomized breast. Also provided herein is a method for fabricating the customized module-wise bra according to the anatomical/physical characteristics of the subject based on various 3D printing, 3D body scanning and ultrasonography techniques.Type: ApplicationFiled: January 20, 2023Publication date: February 13, 2025Inventors: Gloria Lei YAO, Hing-leung CHAN, Erika Kit-shan NGAN, Kaoru Ting-fong LEUNG, Kain Hung-chiu WU, Jasmine Li CHI, Yammy Yan-yi CHENG
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Publication number: 20230343648Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.Type: ApplicationFiled: June 30, 2023Publication date: October 26, 2023Inventors: Shao-Jyun Wu, Hung-Chi Wu, Chia-Ching Lee, Pin-Hsuan Yeh, Hung-Chin Chung, Hsien-Ming Lee, Chien-Hao Chen, Sheng-Liang Pan, Huan-Just Lin
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Patent number: 11735481Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.Type: GrantFiled: August 2, 2021Date of Patent: August 22, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shao-Jyun Wu, Hung-Chi Wu, Chia-Ching Lee, Pin-Hsuan Yeh, Hung-Chin Chung, Hsien-Ming Lee, Chien-Hao Chen, Sheng-Liang Pan, Huan-Just Lin
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Publication number: 20210358811Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.Type: ApplicationFiled: August 2, 2021Publication date: November 18, 2021Inventors: Shao-Jyun Wu, Hung-Chi Wu, Chia-Ching Lee, Pin-Hsuan Yeh, Hung-Chin Chung, Hsien-Ming Lee, Chien-Hao Chen, Sheng-Liang Pan, Huan-Just Lin
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Patent number: 11081396Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.Type: GrantFiled: September 12, 2019Date of Patent: August 3, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shao-Jyun Wu, Hung-Chi Wu, Chia-Ching Lee, Pin-Hsuan Yeh, Hung-Chin Chung, Hsien-Ming Lee, Chien-Hao Chen, Sheng-Liang Pan, Huan-Just Lin
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Publication number: 20210082768Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.Type: ApplicationFiled: September 12, 2019Publication date: March 18, 2021Inventors: Shao-Jyun Wu, Hung-Chi Wu, Chia-Ching Lee, Pin-Hsuan Yeh, Hung-Chin Chung, Hsien-Ming Lee, Chien-Hao Chen, Sheng-Liang Pan, Huan-Just Lin
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Patent number: 9625822Abstract: Embodiments of performing a photolithography process are provided. The method for performing the photolithography process includes providing a substrate and forming a photoresist layer over the substrate. The method further includes forming exposed photoresist portions by performing an exposure process on the photoresist layer. The method further includes performing a surface modifying treatment on the photoresist layer after the exposure process and removing the exposed photoresist portions by performing a developing process.Type: GrantFiled: October 30, 2013Date of Patent: April 18, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Cheng Tsai, Hung-Chi Wu, Tsung-Chuan Lee, Chung-Hsien Lin
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Publication number: 20150116679Abstract: Embodiments of performing a photolithography process are provided. The method for performing the photolithography process includes providing a substrate and forming a photoresist layer over the substrate. The method further includes forming exposed photoresist portions by performing an exposure process on the photoresist layer. The method further includes performing a surface modifying treatment on the photoresist layer after the exposure process and removing the exposed photoresist portions by performing a developing process.Type: ApplicationFiled: October 30, 2013Publication date: April 30, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Cheng TSAI, Hung-Chi WU, Tsung-Chuan LEE, Chung-Hsien LIN
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Publication number: 20070157132Abstract: A process of automatically translating a high level programming language into a hardware description language (HDL), which can use a three-stage translation mechanism to generate the HDL codes corresponding to the functions described by the high level programming language. The first stage translates source codes coded by the high level programming language into an extended activity diagram (EAD). The second stage translates the EAD into a hardware component graph (HCG). The third stage generates the respective signal connections of HDL components according to all edges of the HCG, and outputs an HDL entity and architecture to a file in a string form, thereby completing the entire translation.Type: ApplicationFiled: June 22, 2006Publication date: July 5, 2007Applicant: Tatung CompanyInventors: Fu-Chiung Cheng, Jian-Yi Chen, Kuan-Yu Yan, Shin-Hway Yu, Kuan-Yu Chen, Chieh-Ju Wang, Shu-Ming Chang, Ping-Yun Wang, Li-Kai Chang, Chin-Tai Chou, Chi-Huam Shieh, Ming-Shiou Chiang, Nian-Zhi Huang, Hung-Chi Wu
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Publication number: 20070157187Abstract: A process of automatically translating an extended activity diagram (EAD) into a hardware component graph (HCG).Type: ApplicationFiled: June 21, 2006Publication date: July 5, 2007Applicant: Tatung CompanyInventors: Fu-Chiung Cheng, Shin-Hway Yu, Kuan-Yu Chen, Jian-Yi Chen, Ming-Shiou Chiang, Shu-Ming Chang, Hung-Chi Wu, Ping-Yun Wang
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Publication number: 20030201698Abstract: A storage cabinet comprised of an upper cover, a frame, a base, a back mirror, and a rear panel. The frame is fabricated of steel tubing (hollow metal tubes) and active hinges are installed on the frame to provide for its folding, thereby simplifying packaging material cost. Slide slots are formed along the top edges of lateral frame members that provide for the installation and positioning of the back mirror and the rear panel. The overall design of the present invention reduces components to a bare minimum and is safe, convenient, facilitates DIY assembly, and lowers import and export shipping costs.Type: ApplicationFiled: April 25, 2002Publication date: October 30, 2003Inventors: Yi-Yi Liang, Hung-Chi Wu, Kuan-Chieh Yu
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Patent number: 5096024Abstract: This invention relates to an adjustable magnetic brake and in particular to one including an aluminum fan, a magnetic conducting ring enclosing the aluminum fan, a permanent magnet disposed within the aluminum fan, a fixing seat for keeping the permanent magnet in position, a sliding seat mounted in the fixing seat and provided with a bearing, a housing, bolts provided on one side of the fixing seat and extending out of the housing, a mounting plate connected with the bolts and a wire connected with the mounting plate such that when the wire is pulled outwards, the permanent magnet will be moved outwards.Type: GrantFiled: August 10, 1990Date of Patent: March 17, 1992Inventor: Hung-Chi Wu