Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: Embodiments of performing a photolithography process are provided. The method for performing the photolithography process includes providing a substrate and forming a photoresist layer over the substrate. The method further includes forming exposed photoresist portions by performing an exposure process on the photoresist layer. The method further includes performing a surface modifying treatment on the photoresist layer after the exposure process and removing the exposed photoresist portions by performing a developing process.

Abstract: Embodiments of performing a photolithography process are provided. The method for performing the photolithography process includes providing a substrate and forming a photoresist layer over the substrate. The method further includes forming exposed photoresist portions by performing an exposure process on the photoresist layer. The method further includes performing a surface modifying treatment on the photoresist layer after the exposure process and removing the exposed photoresist portions by performing a developing process.

Abstract: A process of automatically translating an extended activity diagram (EAD) into a hardware component graph (HCG).

Abstract: A process of automatically translating a high level programming language into a hardware description language (HDL), which can use a three-stage translation mechanism to generate the HDL codes corresponding to the functions described by the high level programming language. The first stage translates source codes coded by the high level programming language into an extended activity diagram (EAD). The second stage translates the EAD into a hardware component graph (HCG). The third stage generates the respective signal connections of HDL components according to all edges of the HCG, and outputs an HDL entity and architecture to a file in a string form, thereby completing the entire translation.

Abstract: A storage cabinet comprised of an upper cover, a frame, a base, a back mirror, and a rear panel. The frame is fabricated of steel tubing (hollow metal tubes) and active hinges are installed on the frame to provide for its folding, thereby simplifying packaging material cost. Slide slots are formed along the top edges of lateral frame members that provide for the installation and positioning of the back mirror and the rear panel. The overall design of the present invention reduces components to a bare minimum and is safe, convenient, facilitates DIY assembly, and lowers import and export shipping costs.

Abstract: This invention relates to an adjustable magnetic brake and in particular to one including an aluminum fan, a magnetic conducting ring enclosing the aluminum fan, a permanent magnet disposed within the aluminum fan, a fixing seat for keeping the permanent magnet in position, a sliding seat mounted in the fixing seat and provided with a bearing, a housing, bolts provided on one side of the fixing seat and extending out of the housing, a mounting plate connected with the bolts and a wire connected with the mounting plate such that when the wire is pulled outwards, the permanent magnet will be moved outwards.