Abstract: A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.

Abstract: A packet processing system including an ingress unit, a detour launcher, a packet sequencer, a post-detour handler and an egress unit. The ingress unit is used to receive a packet. The detour launcher is used to detect a microburst according to at least a queue value and accordingly send the packet. The packet sequencer is used to attach a sequence number to the packet when the microburst emerges. The post-detoured handler is used to release the packet after the microburst has elapsed. The egress unit is used to output the packet processed by at least one member of a group consisting of the detour launcher, the packet sequencer and the post-detour handler.

Abstract: A semiconductor structure and a method of forming the same are provided. A method includes depositing a dielectric layer over a conductive feature. The dielectric layer is patterned to form an opening therein. The opening exposes a first portion of the conductive feature. A first barrier layer is deposited on a sidewall of the opening. The first portion of the conductive feature remains exposed at the end of depositing the first barrier layer.

Abstract: An optical interconnect structure including a base substrate, an optical waveguide, a first reflector, a second reflector, a dielectric layer, a first lens, and a second lens is provided. The optical waveguide is embedded in the base substrate. The optical waveguide includes a first end portion and a second end portion opposite to the first end portion. The first reflector is disposed between the base substrate and the first end portion of the optical waveguide. The second reflector is disposed between the base substrate and the second end portion of the optical waveguide. The dielectric layer covers the base substrate and the optical waveguide. The first lens is disposed on the dielectric layer and located above the first end portion of the optical waveguide. The second lens is disposed on the dielectric layer and located above the second end portion of the optical waveguide.

Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.

Abstract: Disclosed are semiconductor packages and manufacturing method of the semiconductor packages. In one embodiment, a semiconductor package includes a substrate, a first waveguide, a semiconductor die, and an adhesive layer. The first waveguide is disposed on the substrate. The semiconductor die is disposed on the substrate and includes a second waveguide aligned with the first waveguide. The adhesive layer is disposed between the first waveguide and the second waveguide.

Abstract: A package structure including a photonic, an electronic die, an encapsulant and a waveguide is provided. The photonic die includes an optical coupler. The electronic die is electrically coupled to the photonic die. The encapsulant laterally encapsulates the photonic die and the electronic die. The waveguide is disposed over the encapsulant and includes an upper surface facing away from the encapsulant. The waveguide includes a first end portion and a second end portion, the first end portion is optically coupled to the optical coupler, and the second end portion has a groove on the upper surface.

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

Abstract: An apparatus includes a chamber, a pedestal configured to receive and support a semiconductor wafer in the chamber, and an edge ring disposed over the pedestal. The edge ring includes a first portion having a first top surface, a second portion coupled to the first portion and having a second top surface lower than the first top surface, and a recess defined in the first portion. The second top surface is under the semiconductor wafer. The recess has a depth, and a distance between the pedestal and an inner surface of the recess is substantially equal to the depth of the recess.

Abstract: A method for forming a memory includes: providing a substrate, a plurality of discrete bit line structures being located on the substrate, and an area surrounded by the adjacent bit line structures and the substrate and having a central axis; forming, on the substrate, a first conductive film filling an area between the adjacent bit line structures; etching the first conductive film by a first etching process to form a first conductive layer; forming a second conductive film on the top surface of the first conductive layer; and etching the second conductive film and the first conductive layer by a second etching process, the remaining second conductive film and the first conductive layer forming a capacitive contact window.

Abstract: An electronic device suitable for a stylus is provided. The electronic device includes a display panel, a touch module, and a processor. The display panel includes a display area. The touch module includes a touchable area. The processor is electrically connected to the display panel and the touch module. The processor defines an effective input area in the touchable area in response to the operation of the stylus, defines a mapping display area in the display area corresponding to the effective input area, and adjusts the display ratio of the mapping display area according to the input ratio of the effective input area.

Abstract: A photonic integrated circuit includes a substrate, an interconnection layer, and a plurality of silicon waveguides. The interconnection layer is over the substrate. The interconnection layer includes a seal ring structure and an interconnection structure surrounded by the seal ring structure. The seal ring structure has at least one recess from a top view. The recess concaves towards the interconnection structure. The silicon waveguides are embedded in the substrate.

Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.

Abstract: A soft-switching power converter includes a main switch, an energy-releasing switch, and an inductive coupled unit. The main switch is a controllable switch. The energy-releasing switch is coupled to the main switch. The inductive coupled unit is coupled to the main switch and the energy-releasing switch. The inductive coupled unit includes a first inductance, a second inductance coupled to the first inductance, and an auxiliary switch unit. The auxiliary switch unit is coupled to the second inductance to form a closed loop. The main switch and the energy-releasing switch are alternately turned on and turned off. The auxiliary switch unit is controlled to start turning on before the main switch is turned on so as to provide at least one current path.

Abstract: A power supply device includes a power supply housing having an accommodating space and an accommodating opening, a hybrid wire-to-wire connector structure and a circuit board disposed in the accommodating space. The hybrid wire-to-wire connector structure includes a connecting seat and an adapter seat. The connecting seat has a signal line terminal and a power line terminal. The connecting seat is disposed in the accommodating opening through an annular rib. The adapter seat has a signal conduction end and a power conduction end. The adapter seat has formed a hook corresponding to the annular rib. The connecting seat and the adapter seat are combined through the signal conduction end inserted in the signal line terminal, the power conduction end inserted in the power line terminal and the hook clamped with the annular rib. Therefore, the power and signal connectors are integrated so as to simplify the assembly.

Abstract: An isolated conversion apparatus with magnetic bias balance control includes an isolated converter, a controller, and a magnetic bias balance circuit. The isolated converter includes a transformer, and a primary side of the transformer includes a primary-side winding and at least one switch bridge arm. The controller is coupled to the at least one switch bridge arm, and provides a pulse width modulation (PWM) signal group to control the at least one switch bridge arm. The magnetic bias balance circuit is coupled to two ends of the primary-side winding and the controller, and provides a compensation voltage to the controller according to an average voltage of a winding voltage across the two ends of the primary-side winding. The controller adjusts a duty cycle of the PWM signal group according to the compensation voltage to correct the magnetic bias.

Abstract: An integrated circuit (IC) includes a first circuit layer that includes a first wireless power transfer (WPT) device, a first chip electrically connected to the first circuit layer, and a first tracking circuit disposed in the first chip. The first WPT device may be configured to extract energy from an electromagnetic signal and provide an output voltage. The first tracking circuit may be powered by the output voltage of the first WPT device and may output tracking data in response to an instruction extracted from the electromagnetic signal.

Abstract: A method for operating a power factor correction (PFC) circuit of an uninterruptible power supply (UPS) apparatus is provided. The PFC circuit includes two T-type converters, and each of the T-type converters includes four switching tubes. The method includes: converting AC input voltage into a positive bus voltage across a first capacitor and a negative bus voltage across a second capacitor that is connected in series with the first capacitor when the UPS apparatus is operated under a normal supply mode; and controlling conduction states of the switching tubes of the T-type converters to balance the positive bus voltage and the negative bus voltage when the UPS apparatus is operated under a battery supply mode.

Abstract: A conversion apparatus with a three-level switching circuit includes a DC conversion module, a three-level circuit, and a control unit. The three-level circuit includes a bridge arm assembly and a capacitor assembly. The capacitor assembly includes a first capacitor and a second capacitor connected to the first capacitor in series. The DC conversion module has a positive output end and a negative output end, and the positive output end and the negative output end are coupled to the bridge arm assembly. The control unit controls the switching of a second switch unit and a third switch unit to make the three-level circuit operate in a first state where the positive output end and the negative output end are connected to the first capacitor, and operate in a second state where the positive output end and the negative output end are connected to the second capacitor.