Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A MEMS die includes a substrate having an opening formed therein, and a diaphragm attached around a periphery thereof to the substrate and over the opening, wherein the diaphragm comprises first and second spaced apart layers. A backplate is disposed between the first and second spaced apart layers. One or more columnar supports are disposed through holes disposed through the backplate and connecting the first and second spaced apart layers. At least a partial vacuum exists between at least a portion of the first and second spaced apart layers. The first layer further comprises interior and exterior sub-layers at least proximate to each of the one or more columnar supports, wherein the interior sub-layers include one or more apertures disposed therethrough.

Abstract: A MEMS die includes a substrate having an opening formed therein, and a diaphragm attached around a periphery thereof to the substrate and over the opening, wherein the diaphragm comprises first and second spaced apart layers. A backplate is disposed between the first and second spaced apart layers. One or more columnar supports are disposed through holes disposed through the backplate and connecting the first and second spaced apart layers. At least a partial vacuum exists between at least a portion of the first and second spaced apart layers. The first layer further comprises interior and exterior sub-layers at least proximate to each of the one or more columnar supports, wherein the interior sub-layers include one or more apertures disposed therethrough.

Abstract: A thin-film device may include a carrier, a release layer, a stacking structure, and a flexible substrate. The release layer may be overlaid on the carrier, and the stacking structure is overlaid on the release layer. The stacking structure may include a first protective layer and a second protective layer, wherein the refractive index of the first protective layer exceeds that of the second protective layer. The flexible substrate may be overlaid on the release layer.

Abstract: This disclosure provides systems, methods, and apparatus for providing protective coatings on electromechanical systems (EMS) devices. A display apparatus can include an electrostatic actuation assembly for controlling the position of a suspended portion of a display element. The electrostatic actuation assembly can include a load beam, drive beam, and a coating disposed over a portion of the drive beam. The coating can include a plurality of raised tabs spaced apart from each other. One or both of the size of the raised tabs and a pitch between raised tabs can be varied along a surface of the drive beam. The voltage used to actuate the actuator is, in part, related to the shape and relative position of the load and drive beams. The raised tabs can be sized, spaced, or positioned to affect a desired rest position and rest shape of the drive beam relative to the load beam.

Abstract: This disclosure provides devices, apparatuses and methods of preventing incorporation of bright defects into an image generated by a display apparatus. A display apparatus may include a chromic film that is selectively activated, with the activated regions of the chromic film being colored, light blocking regions that overlie or underlie bright defect pixels of the display apparatus. The remainder of the chromic film is colorless and light transmissive. The chromic film may be provided as a coating on a substrate of the display apparatus. The chromic film may be selectively activated by exposing regions that overlie or underlie bright defect pixels to laser radiation. The laser radiation may induce a photochemical or thermally activated reaction in the chromic film, selectively changing the irradiated regions from colorless and light transmissive to colored and light blocking.

Abstract: This disclosure provides systems, methods and apparatus for reducing capacitance between interconnects in a display apparatus. In one aspect, a display apparatus can include a plurality of light modulators each having a shutter suspended over a substrate. A first suspended interconnect can electrically couple a first light modulator and a second light modulator. A majority of the length of the first suspended interconnect can be suspended a first height above the substrate. A second suspended interconnect can electrically couple the first light modulator and a third light modulator. A majority of the length of the second suspended interconnect can be above the substrate at a different height than the first suspended interconnect.

Abstract: This disclosure provides systems, methods and apparatus for integrating a photovoltaic cell with a display device. One innovative aspect of the subject matter described in this disclosure can be implemented in a display device that includes a first transparent panel and an array of display elements arranged adjacent the first panel. Each display element includes a shutter-based assembly including at least one shutter and at least one actuator capable of translating the shutter to modulate light. The display device also includes a photovoltaic aperture layer arranged adjacent the first panel. The photovoltaic aperture layer includes an array of apertures, each aperture allowing light from a corresponding display element to pass through the photovoltaic aperture layer for display. The display device further includes an array of conductive leads capable of receiving electrical power generated from the photovoltaic aperture layer.

Abstract: This disclosure provides systems, methods and apparatus including processes that use two layers of resist, with a layer of etch stop material in between.

Abstract: A thin-film device may include a carrier, a release layer, a stacking structure, and a flexible substrate. The release layer may be overlaid on the carrier, and the stacking structure is overlaid on the release layer. The stacking structure may include a first protective layer and a second protective layer, wherein the refractive index of the first protective layer exceeds that of the second protective layer. The flexible substrate may be overlaid on the release layer.

Abstract: A light-emitting device and a method for manufacturing the same are provided. The light-emitting device comprises a substrate, a light-emitting element and a light-electricity-transforming element. The substrate has a first region and a second region which are non-overlapping. The light-emitting element is disposed over the substrate and located in the second region. The light-electricity-transforming element is disposed over the substrate and located in the first region. At least a portion of a side wall of the light-electricity-transforming element corresponds to at least a portion of a side wall of the light-emitting element, so that at least a side light from the light-emitting element is received and transformed into an electricity power by the light-electricity-transforming device.

Abstract: A light-emitting device and a method for manufacturing the same are provided. The light-emitting device comprises a substrate, a light-emitting element and a light-electricity-transforming element. The substrate has a first region and a second region which are non-overlapping. The light-emitting element is disposed over the substrate and located in the second region. The light-electricity-transforming element is disposed over the substrate and located in the first region. At least a portion of a side wall of the light-electricity-transforming element corresponds to at least a portion of a side wall of the light-emitting element, so that at least a side light from the light-emitting element is received and transformed into an electricity power by the light-electricity-transforming device.