Abstract: A wafer storage elevator and method for detecting wafer position shift. The elevator includes a first storage elevator sidewall, a second storage elevator sidewall, and a storage seat positioned between the first and second storage elevator sidewalls. A first mirror block is coupled to a front side of the storage seat having a mirror positioned on a top surface of the block, and a second mirror block is coupled to the front side of the storage seat having a mirror that is positioned on the top surface of the second mirror block. The mirror of the first mirror block reflects a laser beam from an emission sensor to the second mirror block, and the mirror of the second mirror block reflects the laser beam from the mirror of the first mirror block to a receive sensor. A wafer misalignment is determined based upon an output of the receive sensor.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: An uninterruptible power apparatus is coupled between a power grid and a load. The uninterruptible power apparatus includes a bypass path, a power conversion module, and a control module. The bypass path is coupled to the power grid through a grid terminal, and coupled to the load through a load terminal. The control module turns off a first thyristor and a second thyristor by injecting a second voltage into the load terminal during a forced commutation period. The control module calculates a magnetic flux offset amount based on an error amount between the second voltage and a voltage command, and provides a compensation command in response to the magnetic flux offset amount. The control module controls the DC/AC conversion circuit to provide a third voltage to the load terminal based on the compensation command and the voltage command.

Abstract: A transistor includes an insulating layer, a source region, a drain region, a channel layer, a ferroelectric layer, and a gate electrode. The source region and the drain region are respectively disposed on and in physical contact with two opposite sidewalls of the insulating layer. A thickness of the source region, a thickness of the drain region, and a thickness of the insulating layer are substantially the same. The channel layer is disposed on the insulating layer, the source region, and the drain region. The ferroelectric layer is disposed over the channel layer. The gate electrode is disposed on the ferroelectric layer.

Abstract: The present disclosure, in some embodiments, relates an integrated chip. The integrated chip includes a substrate. A through-substrate-via (TSV) extends through the substrate. A dielectric liner separates the TSV from the substrate. The dielectric liner is along one or more sidewalls of the substrate. The TSV includes a horizontally extending surface and a protrusion extending outward from the horizontally extending surface. The TSV has a maximum width along the horizontally extending surface.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: A method that is disclosed that includes the operations outlined below. Dies are arranged on a test fixture, and each of the dies includes first antennas and at least one via array, wherein the at least one via array is formed between at least two of the first antennas to separate the first antennas. By the first antennas of the dies, test processes are sequentially performed on an under-test device including second antennas that positionally correspond to the first antennas, according to signal transmissions between the first antennas and the second antennas.

Abstract: A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.

Abstract: A testing holder for a chip unit, a multi site holding frame for plural chip units and a method for testing a die thereof are provided. The proposed multi site holding frame for testing plural chip units simultaneously includes a first holder frame having a plurality of testing holders. Each of the plurality of testing holders includes a holder body containing a specific one of the plural chip units, and a pressure releasing device formed on the holder body to release an insertion pressure when the specific one of the plural chip units is inserted in the holder body.

Abstract: A method that is disclosed that includes the operations outlined below. Dies are arranged on a test fixture, and each of the dies includes first antennas and at least one via array, wherein the at least one via array is formed between at least two of the first antennas to separate the first antennas. By the first antennas of the dies, test processes are sequentially performed on an under-test device including second antennas that positionally correspond to the first antennas, according to signal transmissions between the first antennas and the second antennas.

Abstract: An exemplary video processing method includes: receiving an omnidirectional content corresponding to a sphere; obtaining a plurality of projection faces from the omnidirectional content of the sphere according to a pyramid projection; creating at least one padding region; and generating a projection-based frame by packing the projection faces and the at least one padding region in a pyramid projection layout. The projection faces packed in the pyramid projection layout include a first projection face. The at least one padding region packed in the pyramid projection layout includes a first padding region. The first padding region connects with at least the first projection face, and forms at least a portion of one boundary of the pyramid projection layout.

Abstract: A method that is disclosed that includes the operations outlined below. Dies are arranged on a test fixture, and each of the dies includes first antennas and at least one via array, wherein the at least one via array is formed between at least two of the first antennas to separate the first antennas. By the first antennas of the dies, test processes are sequentially performed on an under-test device including second antennas that positionally correspond to the first antennas, according to signal transmissions between the first antennas and the second antennas.

Abstract: A magnetic component includes a first core component, a second core component and at least one coil. The first core component includes a first molding bobbin covering a first part of a core set by an injection molding process. The second core component includes a second molding bobbin covering a second part of the core set by the injection molding process. The first core component is assembled with the second core component to form a first pillar and a second pillar. Each of the first pillar and the second pillar includes a plurality of cores stacked with each other in a direction toward an outside or inside of the magnetic component. The at least one coil is wound on at least one of the first pillar and the second pillar.

Abstract: A testing holder for a chip unit, a multi site holding frame for plural chip units and a method for testing a die thereof are provided. The proposed multi site holding frame for testing plural chip units simultaneously includes a first holder frame having a plurality of testing holders. Each of the plurality of testing holders includes a holder body containing a specific one of the plural chip units, and a pressure releasing device formed on the holder body to release an insertion pressure when the specific one of the plural chip units is inserted in the holder body.

Abstract: An integrated circuit (IC) includes a first circuit layer that includes a first wireless power transfer (WPT) device, a first chip electrically connected to the first circuit layer, and a first tracking circuit disposed in the first chip. The first WPT device may be configured to extract energy from an electromagnetic signal and provide an output voltage. The first tracking circuit may be powered by the output voltage of the first WPT device and may output tracking data in response to an instruction extracted from the electromagnetic signal.

Abstract: A testing holder for a chip unit, a multi site holding frame for plural chip units and a method for testing a die thereof are provided. The proposed multi site holding frame for testing plural chip units simultaneously includes a first holder frame having a plurality of testing holders. Each of the plurality of testing holders includes a holder body containing a specific one of the plural chip units, and a pressure releasing device formed on the holder body to release an insertion pressure when the specific one of the plural chip units is inserted in the holder body.

Abstract: A testing apparatus with reduced warping of the probe card and a method of reducing warping of a probe card of a testing apparatus are disclosed. The testing apparatus can include a testing head and a platform opposite the testing head, where the testing head and platform move relative to one another to bring a sample into contact with probing tips of the testing apparatus. The testing head can include a probe card printed circuit board, a stiffener, a discontinuous backer and a plurality of probing tips. The stiffener can be coupled to and reinforcing the probe card. The discontinuous backer can extend from the probe card to the stiffener, and can include at least one unfilled void extending from the stiffener to the probe card. The plurality of probing tips can extend from a distal end of the testing head.

Abstract: Among other things, one or more techniques or systems for evaluating a tiered semiconductor structure, such as a stacked CMOS structure, for misalignment are provided. In an embodiment, a connectivity test is performed on vias between a first layer and a second layer to determine a via diameter and a via offset that are used to evaluate misalignment. In an embodiment, a connectivity test for vias within a first layer is performed to determine an alignment rotation based upon which vias are connected through a conductive arc within a second layer or which vias are connected to a conductive pattern out of a set of conductive patterns. In this way, the via diameter, the via offset, or the alignment rotation are used to evaluate the tiered semiconductor structure, such as during a stacked CMOS process, for misalignment.

Abstract: The present disclosure provides a system and method for providing electrostatic discharge protection. A probe card assembly is provided which is electrically connected to a plurality of input/output channels. The probe card assembly can be contacted with a secondary assembly having an interposer electrically connected to one or more wafers each wafer having a device under test. Voltage can be forced on ones of the plural input/output channels of the probe card assembly to slowly dissipate charges resident on the wafer to thereby provide electrostatic discharge protection. A socket assembly adaptable to accept a 3DIC package is also provided, the assembly having a loadboard assembly electrically connected to a plurality of input/output channels. Once the 3DIC package is placed within the socket assembly, voltage is forced on ones of the input/output channels to slowly dissipate charges resident on the 3DIC package to thereby provide electrostatic discharge protection.

Abstract: A testing apparatus for testing an integrated circuit package having a plurality of electrical terminals includes a base, a socket, a plurality of conductive pins and a plurality of conductive pillars. The base includes a plurality of electrical contacts. The socket is disposed on the base and includes a bended portion bended away from the base and a plurality of through holes distributed in the socket. The conductive pins are disposed in the through holes respectively and electrically connected to the electrical contacts, wherein each of the conductive pins protrudes from an upper surface of the socket for forming temporary electrical connections with one of the electrical terminals. The conductive pillars are disposed on the base and connected to the bended portion, wherein each of the conductive pillars electrically connects one of the conductive pins and one of the electrical contacts.