Patents by Inventor Hung-Chuan Liu
Hung-Chuan Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11391685Abstract: A sensitive device includes a plurality of first conductive nanostructures, a conductive layer and at least one electrode. The conductive layer covers the first conductive nanostructures. An intrinsic melting point of the conductive layer is higher than that of the first conductive nanostructures. At least one of the conductive layer and the first conductive nanostructures is sensitive to gas. The electrode is electrically connected to at least one of the first conductive nanostructures and the conductive layer.Type: GrantFiled: September 12, 2017Date of Patent: July 19, 2022Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Po-Yi Chang, Hung-Chuan Liu, Yi-Ting Chou, Wei-Tsung Chen
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Patent number: 11041822Abstract: A sensing element includes a conductive substrate, a zinc oxide seed layer, a plurality of zinc oxide nanorods, a film with an electrical double layer, and an organic sensing layer. The zinc oxide seed layer is located on the conductive substrate. The zinc oxide nanorods extend from the zinc oxide seed layer. The film with the electrical double layer covers the zinc oxide nanorods. The organic sensing layer is located on the film with the electrical double layer.Type: GrantFiled: August 22, 2018Date of Patent: June 22, 2021Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Yu-Nung Mao, Hung-Chuan Liu, Zong-Xuan Li, Wei-Tsung Chen
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Patent number: 10928853Abstract: A transparent display device having an optical transmissive region and a circuit layout region is provided. A light transmittance of the optical transmissive region is greater than that of the circuit layout region. The transparent display device includes a plurality of display elements and a driving circuit. The display elements are disposed in the optical transmissive region or the circuit layout region. The driving circuit is disposed in the circuit layout region and is electrically connected with the display elements. The transparent display device satisfies: 0.1<light spot spreading degree <1.1+0.78×exp (0.0072×resolution), and 10%<aperture ratio <90%.Type: GrantFiled: October 28, 2019Date of Patent: February 23, 2021Assignee: Industrial Technology Research InstituteInventors: Yu-Tang Tsai, Shin-Hong Kuo, Yu-Hsiang Tsai, Chih-Chia Chang, Hung-Chuan Liu
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Publication number: 20200264655Abstract: A transparent display device having an optical transmissive region and a circuit layout region is provided. A light transmittance of the optical transmissive region is greater than that of the circuit layout region. The transparent display device includes a plurality of display elements and a driving circuit. The display elements are disposed in the optical transmissive region or the circuit layout region. The driving circuit is disposed in the circuit layout region and is electrically connected with the display elements. The transparent display device satisfies: 0.1<light spot spreading degree <1.1+0.78×exp (0.0072×resolution), and 10%<aperture ratio <90%.Type: ApplicationFiled: October 28, 2019Publication date: August 20, 2020Applicant: Industrial Technology Research InstituteInventors: Yu-Tang Tsai, Shin-Hong Kuo, Yu-Hsiang Tsai, Chih-Chia Chang, Hung-Chuan Liu
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Publication number: 20200217816Abstract: Described herein are ultrasensitive gas sensors based on a vertical-channel organic semiconductor (OSC) diode, along with methods for making such devices, and uses thereof. The organic sensing layer comprises a fused thiophene-based organic polymer that connects top and bottom electrodes to deliver a vertical current flow. The nano-porous top-electrode structure enables the contact between ambient gas molecules and the vertical organic channel. The device has high sensitivity, is easy to process, and has a long shelf life.Type: ApplicationFiled: December 4, 2019Publication date: July 9, 2020Inventors: Mingqian He, Yang Li, Hung-Chuan Liu, Karan Mehrotra, Hsin-Fei Meng, Hsiao-Wen Zan
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Patent number: 10326088Abstract: An organic thin film transistor includes a substrate, a hydrophobic layer, an oxide layer, a hydrophilic layer, a semiconductor layer, and a source/drain layer. The hydrophobic layer covers a surface of the substrate. The oxide layer is located on the hydrophobic layer and has plural segments. The hydrophilic layer is located on the segments of the oxide layer, and the oxide layer is located between the hydrophilic layer and the hydrophobic layer. The semiconductor layer is located on the hydrophilic layer, and the hydrophilic layer is located between the semiconductor layer and the oxide layer. The source/drain layer connects across the semiconductor layer on the segments of the oxide layer.Type: GrantFiled: March 29, 2018Date of Patent: June 18, 2019Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Chun-Chih Chen, Hung-Chuan Liu, Zong-Xuan Li, Wei-Tsung Chen
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Publication number: 20190079040Abstract: A sensing element includes a conductive substrate, a zinc oxide seed layer, a plurality of zinc oxide nanorods, a film with an electrical double layer, and an organic sensing layer. The zinc oxide seed layer is located on the conductive substrate. The zinc oxide nanorods extend from the zinc oxide seed layer. The film with the electrical double layer covers the zinc oxide nanorods. The organic sensing layer is located on the film with the electrical double layer.Type: ApplicationFiled: August 22, 2018Publication date: March 14, 2019Inventors: Hsiao-Wen ZAN, Chuang-Chuang TSAI, Yu-Nung MAO, Hung-Chuan LIU, Zong-Xuan LI, Wei-Tsung CHEN
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Publication number: 20180294422Abstract: An organic thin film transistor includes a substrate, a hydrophobic layer, an oxide layer, a hydrophilic layer, a semiconductor layer, and a source/drain layer. The hydrophobic layer covers a surface of the substrate. The oxide layer is located on the hydrophobic layer and has plural segments. The hydrophilic layer is located on the segments of the oxide layer, and the oxide layer is located between the hydrophilic layer and the hydrophobic layer. The semiconductor layer is located on the hydrophilic layer, and the hydrophilic layer is located between the semiconductor layer and the oxide layer. The source/drain layer connects across the semiconductor layer on the segments of the oxide layer.Type: ApplicationFiled: March 29, 2018Publication date: October 11, 2018Inventors: Hsiao-Wen ZAN, Chuang-Chuang TSAI, Chun-Chih CHEN, Hung-Chuan LIU, Zong-Xuan LI, Wei-Tsung CHEN
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Publication number: 20180128762Abstract: A sensitive device includes a plurality of first conductive nanostructures, a conductive layer and at least one electrode. The conductive layer covers the first conductive nanostructures. An intrinsic melting point of the conductive layer is higher than that of the first conductive nanostructures. At least one of the conductive layer and the first conductive nanostructures is sensitive to gas. The electrode is electrically connected to at least one of the first conductive nanostructures and the conductive layer.Type: ApplicationFiled: September 12, 2017Publication date: May 10, 2018Inventors: Hsiao-Wen ZAN, Chuang-Chuang TSAI, Po-Yi CHANG, Hung-Chuan LIU, Yi-Ting CHOU, Wei-Tsung CHEN
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Patent number: 9236492Abstract: An active device provided by the invention is disposed on a substrate and includes a gate, a gate insulating layer, an oxide semiconductor channel layer, a plurality of nano conductive wires, a source and a drain. The gate insulating layer is disposed between the gate and the oxide semiconductor channel layer. The nano conductive wires are distributed in the oxide semiconductor channel layer, in which the nano conductive wires do not contact the gate insulating layer and the nano conductive wires are arranged along a direction and not intersected with each other. The source and the drain are disposed on two sides opposite to each other of the oxide semiconductor channel layer, in which a portion of the oxide semiconductor channel layer is exposed between the source and the drain.Type: GrantFiled: January 23, 2014Date of Patent: January 12, 2016Assignee: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Pei-Chen Yu, Hung-Chuan Liu, Bing-Shu Wu, Yi-Chun Lai, Wei-Tsung Chen
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Publication number: 20140326989Abstract: An active device provided by the invention is disposed on a substrate and includes a gate, a gate insulating layer, an oxide semiconductor channel layer, a plurality of nano conductive wires, a source and a drain. The gate insulating layer is disposed between the gate and the oxide semiconductor channel layer. The nano conductive wires are distributed in the oxide semiconductor channel layer, in which the nano conductive wires do not contact the gate insulating layer and the nano conductive wires are arranged along a direction and not intersected with each other. The source and the drain are disposed on two sides opposite to each other of the oxide semiconductor channel layer, in which a portion of the oxide semiconductor channel layer is exposed between the source and the drain.Type: ApplicationFiled: January 23, 2014Publication date: November 6, 2014Applicant: E Ink Holdings Inc.Inventors: Hsiao-Wen Zan, Chuang-Chuang Tsai, Pei-Chen Yu, Hung-Chuan Liu, Bing-Shu Wu, Yi-Chun Lai, Wei-Tsung Chen