Patents by Inventor Hung-Chun Pan

Hung-Chun Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR STRUCTURE WITH EXTENDED CONTACT STRUCTURE
    Publication number: 20240170537
    Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. In addition, the nanostructures includes channel regions and source/drain regions. The semiconductor structure further includes a gate structure vertically sandwiched the channel regions of the nanostructures and a contact wrapping around and vertically sandwiched between the source/drain regions of the nanostructures.
    Type: Application
    Filed: February 1, 2024
    Publication date: May 23, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ta-Chun LIN, Kuo-Hua PAN, Jhon-Jhy LIAW, Chao-Ching CHENG, Hung-Li CHIANG, Shih-Syuan HUANG, Tzu-Chiang CHEN, I-Sheng CHEN, Sai-Hooi YEONG
  • Semiconductor structure with extended contact structure
    Patent number: 11923413
    Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. The semiconductor structure further includes a gate structure surrounding the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure further includes a contact formed over the source/drain structure and extending into the source/drain structure.
    Type: Grant
    Filed: February 7, 2022
    Date of Patent: March 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ta-Chun Lin, Kuo-Hua Pan, Jhon-Jhy Liaw, Chao-Ching Cheng, Hung-Li Chiang, Shih-Syuan Huang, Tzu-Chiang Chen, I-Sheng Chen, Sai-Hooi Yeong
  • Fabriation method for light absorption layer of solar cell
    Patent number: 8828767
    Abstract: The disclosure discloses a fabrication method for a light absorption layer of a solar cell, including: forming a precursor film on a substrate, wherein the precursor film includes the Group IB-IIB-IVA-VIA amorphous nanoparticles; and conducting a thermal process to the precursor film to form the light absorption layer on the substrate.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: September 9, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Tsung-Shin Wu, Shih-Hsiung Wu, Hung-Chun Pan, Lung-Teng Cheng, Yu-Yun Wang
  • FABRIATION METHOD FOR LIGHT ABSORPTION LAYER OF SOLAR CELL
    Publication number: 20130171768
    Abstract: The disclosure discloses a fabrication method for a light absorption layer of a solar cell, including: forming a precursor film on a substrate, wherein the precursor film includes the Group IB-IIB-IVA-VIA amorphous nanoparticles; and conducting a thermal process to the precursor film to form the light absorption layer on the substrate.
    Type: Application
    Filed: August 31, 2012
    Publication date: July 4, 2013
    Inventors: Tsung-Shin Wu, Shih-Hsiung Wu, Hung-Chun Pan, Lung-Teng Cheng, Yu-Yun Wang