Patents by Inventor Hung-Da Dai

Hung-Da Dai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10109668
    Abstract: A pixel structure of an image sensor and fabrication methods thereof are provided. The pixel structure includes a semiconductor substrate and plural pixel units disposed on the semiconductor substrate. The pixel units are electrically connected to each other, and each of the pixel units includes a light-sensitive region, a transfer gate and a protection layer. A terminal portion of the protection layer is covered by the transfer gate, and a width of the terminal portion of the protection layer is progressively decreased along a depthwise direction of the terminal portion of the protection layer. In the fabrication methods of the pixel structure, the protection layers of the pixel units are formed by doping with a tilt angle, so as to form the terminal portion of the protection layer.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: October 23, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Bo-Tsung Tsai, Hung-Da Dai, Mao-Yi Sun, Wei-Li Hu
  • Publication number: 20180269249
    Abstract: A pixel structure of an image sensor and fabrication methods thereof are provided. The pixel structure includes a semiconductor substrate and plural pixel units disposed on the semiconductor substrate. The pixel units are electrically connected to each other, and each of the pixel units includes a light-sensitive region, a transfer gate and a protection layer. A terminal portion of the protection layer is covered by the transfer gate, and a width of the terminal portion of the protection layer is progressively decreased along a depthwise direction of the terminal portion of the protection layer. In the fabrication methods of the pixel structure, the protection layers of the pixel units are formed by doping with a tilt angle, so as to form the terminal portion of the protection layer.
    Type: Application
    Filed: March 20, 2017
    Publication date: September 20, 2018
    Inventors: Bo-Tsung Tsai, Hung-Da Dai, Mao-Yi Sun, Wei-Li Hu