Patents by Inventor Hung E. Kim

Hung E. Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making a fine annular charge storage electrode in a semiconductor device using a phase-shift mask
    Patent number: 5583069
    Abstract: The present invention provides a method for making a fine annular charge storage electrode in a semiconductor device, which is capable of easily forming the charge storage electrode having a double cylinder-shaped structure and a fine annular pattern which is smaller than the wavelength from the light source, using a phase-shift mask. Accordingly, the present invention has an effect in that the reliability of a memory device having the charge storage electrode is improved, by removing the bad contact in the double cylinder-shaped structure, and that the surface of the charge storage electrode can be easily increased from 20% to 80%.
    Type: Grant
    Filed: July 7, 1995
    Date of Patent: December 10, 1996
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Chang N. Ahn, Ik B. Hur, Hung E. Kim, Seung C. Moon, Il H. Lee
  • Method for manufacturing a phase shift mask
    Patent number: 5498497
    Abstract: A phase shift layer is formed on a transparent glass on which a Cr pattern is formed and a phase shift layer pattern self-aligned by the Cr pattern is formed so that high resolution is obtained by minimized the overlapping error and the reliability of the semiconductor device is improved.
    Type: Grant
    Filed: August 29, 1994
    Date of Patent: March 12, 1996
    Assignee: Hyundai Electronics Industries, Co., Ltd.
    Inventors: Young S. Kim, Young M. Ham, Ik B. Huh, Hung E. Kim