Abstract: Disclosed is a method for forming a bonding pad in a TFT array process for a reflective LCD and the bonding pad formed by the method, in which an ITO is formed on the first or second metal layer directly during the fabrication of the TFT structure for the reflective LCD to thereby obtain the bonding pad directly after etching the contact window for the scan bonding pad or data bonding pad, and thus an ITO mask process for bonding pad is saved and the LCD process is simplified.

Abstract: Disclosed is a method for controlling profile formation of low taper angle in metal thin film electrode applicable to manufacture of thin film transistor liquid crystal display in order for insulator capably deposited on the metal thin film electrode with good step coverage, by which a double-layer structure for metal electrode is formed with two metals on a substrate and then etched with a wet etching solution having a higher etching rate to the upper layer metal than that to the lower layer metal of the double-layer structure. By employing different etching rate and thickness to the double-layer metals, a metal electrode is formed with a very low taper angle and thus can be deposited with insulator of good step coverage thereon.