Patents by Inventor Hung-Hsi Yang

Hung-Hsi Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TITANIUM OXIDE EXTENDED GATE FIELD EFFECT TRANSISTOR
    Publication number: 20080143352
    Abstract: A titanium oxide extended gate field effect transistor (EGFET) device and fabricating method thereof. Titanium oxide is formed on an EGFET by sputtering, coating a detection membrane therefor. Current-voltage relationships at different pH values are also measured via a current measuring system. Sensitivity parameter of the titanium oxide EGFET is calculated according to a relationship between a pH value and a gate voltage.
    Type: Application
    Filed: February 26, 2008
    Publication date: June 19, 2008
    Applicant: NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jung-Chuan Chou, Hung-Hsi Yang
  • TITANIUM OXIDE EXTENDED GATE FIELD EFFECT TRANSISTOR
    Publication number: 20080105914
    Abstract: A titanium oxide extended gate field effect transistor (EGFET) device and fabricating method thereof. Titanium oxide is formed on an EGFET by sputtering, coating a detection membrane therefor. Current-voltage relationships at different pH values are also measured via a current measuring system. Sensitivity parameter of the titanium oxide EGFET is calculated according to a relationship between a pH value and a gate voltage.
    Type: Application
    Filed: January 11, 2008
    Publication date: May 8, 2008
    Applicant: NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jung-Chuan Chou, Hung-Hsi Yang
  • Titanium oxide extended gate field effect transistor
    Publication number: 20060220092
    Abstract: A titanium oxide extended gate field effect transistor (EGFET) device and fabricating method thereof. Titanium oxide is formed on an EGFET by sputtering, coating a detection membrane therefor. Current-voltage relationships at different pH values are also measured via a current measuring system. Sensitivity parameter of the titanium oxide EGFET is calculated according to a relationship between a pH value and a gate voltage.
    Type: Application
    Filed: March 20, 2006
    Publication date: October 5, 2006
    Applicant: NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jung-Chuan Chou, Hung-Hsi Yang