Patents by Inventor Hung-Hsiang Wang

Hung-Hsiang Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11973023
    Abstract: A stacked via structure including a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer and a second conductive via is provided. The first dielectric layer includes a first via opening. The first conductive via is in the first via opening. A first level height offset is between a top surface of the first conductive via and a top surface of the first dielectric layer. The first redistribution wiring covers the top surface of the first conductive via and the top surface of the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer and the first redistribution wiring. The second dielectric layer includes a second via opening. The second conductive via is in the second via opening. The second conductive via is electrically connected to the first redistribution wiring through the second via opening of the second dielectric layer.
    Type: Grant
    Filed: February 3, 2021
    Date of Patent: April 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Han Wang, Hung-Jui Kuo, Yu-Hsiang Hu
  • Publication number: 20240126174
    Abstract: A method includes the following steps. A photoresist is exposed to a first light-exposure through a first mask, wherein the first mask includes a first stitching region, and a first portion of the photoresist corresponding to a first opaque portion of the first stitching region is unexposed. The photoresist is exposed to a second light-exposure through a second mask, wherein the second mask includes a second stitching region, and a second portion of the photoresist corresponding to a second opaque portion of the second stitching region is unexposed and is overlapping with the first portion of the photoresist.
    Type: Application
    Filed: December 28, 2023
    Publication date: April 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Che Tu, Po-Han Wang, Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo
  • Patent number: 11961777
    Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.
    Type: Grant
    Filed: June 27, 2022
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Chih Chen, Chien-Hsun Lee, Chung-Shi Liu, Hao-Cheng Hou, Hung-Jui Kuo, Jung-Wei Cheng, Tsung-Ding Wang, Yu-Hsiang Hu, Sih-Hao Liao
  • Publication number: 20240113089
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a die, an underfill layer, a patterned dielectric layer and a plurality of conductive terminals. The die has a front surface and a back surface opposite to the front surface. The underfill layer encapsulates the die, wherein a surface of the underfill layer and the back surface of the die are substantially coplanar to one another. The patterned dielectric layer is disposed on the back surface of the die. The conductive terminals are disposed on and in contact with a surface of the patterned dielectric layer and partially embedded in the patterned dielectric layer to be in contact with the die, wherein a portion of the surface of the patterned dielectric layer that directly under each of the conductive terminals is substantially parallel with the back surface of the die.
    Type: Application
    Filed: January 10, 2023
    Publication date: April 4, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tian Hu, Po-Han Wang, Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo
  • Patent number: 11948918
    Abstract: A semiconductor device having a redistribution structure and a method of forming the same are provided. A semiconductor device includes a semiconductor structure, a redistribution structure over and electrically coupled the semiconductor structure, and a connector over and electrically coupled to the redistribution structure. The redistribution structure includes a base via and stacked vias electrically interposed between the base via and the connector. The stacked vias are laterally spaced apart from the base via.
    Type: Grant
    Filed: November 17, 2020
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo
  • Patent number: 11942435
    Abstract: In an embodiment, a device includes: a molding compound; an integrated circuit die encapsulated in the molding compound; a through via adjacent the integrated circuit die; and a redistribution structure over the integrated circuit die, the molding compound, and the through via, the redistribution structure electrically connected to the integrated circuit die and the through via, the redistribution structure including: a first dielectric layer disposed over the molding compound; a first conductive via extending through the first dielectric layer; a second dielectric layer disposed over the first dielectric layer and the first conductive via; and a second conductive via extending through the second dielectric layer and into a portion of the first conductive via, an interface between the first conductive via and the second conductive via being non-planar.
    Type: Grant
    Filed: April 18, 2023
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Han Wang, Hung-Jui Kuo, Yu-Hsiang Hu
  • Patent number: 11942417
    Abstract: A device includes a sensor die having a sensing region at a top surface of the sensor die, an encapsulant at least laterally encapsulating the sensor die, a conductive via extending through the encapsulant, and a front-side redistribution structure on the encapsulant and on the top surface of the sensor die, wherein the front-side redistribution structure is connected to the conductive via and the sensor die, wherein an opening in the front-side redistribution structure exposes the sensing region of the sensor die, and wherein the front-side redistribution structure includes a first dielectric layer extending over the encapsulant and the top surface of the sensor die, a metallization pattern on the first dielectric layer, and a second dielectric layer extending over the metallization pattern and the first dielectric layer.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yung-Chi Chu, Sih-Hao Liao, Po-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo
  • Publication number: 20240088056
    Abstract: A method includes encapsulating a device die in an encapsulating material, forming a first dielectric layer over the device die and the encapsulating material, forming first redistribution lines extending into the first dielectric layer to electrically couple to the device die, forming an alignment mark over the first dielectric layer, wherein the alignment mark includes a plurality of elongated strips, forming a second dielectric layer over the first redistribution lines and the alignment mark, and forming second redistribution lines extending into the second dielectric layer to electrically couple to the first redistribution lines. The second redistribution lines are formed using the alignment mark for alignment.
    Type: Application
    Filed: November 15, 2023
    Publication date: March 14, 2024
    Inventors: Jhih-Yu Wang, Yung-Chi Chu, Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo
  • Patent number: 10910062
    Abstract: A random bit cell includes a latch and a nonvolatile memory cell. The nonvolatile memory cell includes a storage circuit, a control element, an erase element, and a read circuit. The storage circuit is coupled to a first terminal of the latch. The storage circuit includes a floating gate transistor having a first terminal, a second terminal, and a floating gate. The control element has a first terminal coupled to a control line, and a control terminal coupled to the floating gate of the floating gate transistor. The erase element has a first terminal coupled to an erase line, and a control terminal coupled to the floating gate of the floating gate transistor. The read circuit is coupled to a bit line, a select gate line, and the floating gate of the floating gate transistor.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: February 2, 2021
    Assignee: eMemory Technology Inc.
    Inventors: Tsung-Mu Lai, Hung-Hsiang Wang, Cheng-Te Yang, Chih-Hsin Chen
  • Publication number: 20200258579
    Abstract: A random bit cell includes a latch and a nonvolatile memory cell. The nonvolatile memory cell includes a storage circuit, a control element, an erase element, and a read circuit. The storage circuit is coupled to a first terminal of the latch. The storage circuit includes a floating gate transistor having a first terminal, a second terminal, and a floating gate. The control element has a first terminal coupled to a control line, and a control terminal coupled to the floating gate of the floating gate transistor. The erase element has a first terminal coupled to an erase line, and a control terminal coupled to the floating gate of the floating gate transistor. The read circuit is coupled to a bit line, a select gate line, and the floating gate of the floating gate transistor.
    Type: Application
    Filed: November 27, 2019
    Publication date: August 13, 2020
    Inventors: Tsung-Mu Lai, Hung-Hsiang Wang, Cheng-Te Yang, Chih-Hsin Chen
  • Patent number: 10028162
    Abstract: The disclosure is directed to a method of controlling a heterogeneous network and related apparatuses using the same method. In one of the exemplary embodiments, the disclosure is directed to a method controlling a heterogeneous network applicable to a base station, the method includes not limited to: transmitting a first configuration message comprising a measurement and report rule (MRR) which comprises a first measuring interval, a second measuring interval, a first reporting interval, and a second reporting interval for receiving a measurement report of a channel of an unlicensed spectrum; receiving the measurement report of the channel of the unlicensed spectrum after transmitting the first configuration message; and transmitting a second configuration message to update the MRR.
    Type: Grant
    Filed: August 11, 2016
    Date of Patent: July 17, 2018
    Assignee: Industrial Technology Research Institute
    Inventors: Hung-Hsiang Wang, Yung-Lan Tseng
  • Publication number: 20170048738
    Abstract: The disclosure is directed to a method of controlling a heterogeneous network and related apparatuses using the same method. In one of the exemplary embodiments, the disclosure is directed to a method controlling a heterogeneous network applicable to a base station, the method includes not limited to: transmitting a first configuration message comprising a measurement and report rule (MRR) which comprises a first measuring interval, a second measuring interval, a first reporting interval, and a second reporting interval for receiving a measurement report of a channel of an unlicensed spectrum; receiving the measurement report of the channel of the unlicensed spectrum after transmitting the first configuration message; and transmitting a second configuration message to update the MRR.
    Type: Application
    Filed: August 11, 2016
    Publication date: February 16, 2017
    Applicant: Industrial Technology Research Institute
    Inventors: Hung-Hsiang Wang, Yung-Lan Tseng
  • Publication number: 20160309335
    Abstract: An unlicensed carrier evaluating method and an evolved Node B (eNB) using the same are provided. The unlicensed carrier evaluating method includes the following steps. An eNB transmits a configuration information to at least one user equipment (UE). The configuration information includes a timing parameter. The at least one UE transmits at least one preamble sequence to a Licensed Assisted Access (LAA) node through at least one unlicensed carrier according to the configuration information. The LAA node is connected to the eNB. The eNB or the LAA node evaluates a transmission efficiency of the at least one unlicensed carrier according to the at least one preamble sequence.
    Type: Application
    Filed: March 31, 2016
    Publication date: October 20, 2016
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Wei-Chen PAO, Hung-Hsiang WANG
  • Publication number: 20160197899
    Abstract: A dynamic encryption type fingerprint sensor includes a capacitive array sensing fingerprints and producing fingerprint data, an embedded non-volatile memory (eNVM) storing a one-time code (OTC) and an encryption algorithm indicator, and a logic algorithm circuit encrypting the fingerprint data produced by the capacitive array according to the OTC and the encryption algorithm indicator. The logic algorithm circuit includes an encryption circuit having a plurality of logic encryption circuits selected using the encryption algorithm indicator, the encryption circuit encrypting the fingerprint data using selected logic encryption circuits of the plurality of logic encryption circuits according to the OTC. A control circuit is used for controlling operation of the capacitive array, the eNVM, and the logic algorithm circuit.
    Type: Application
    Filed: January 6, 2016
    Publication date: July 7, 2016
    Inventors: Hsin-Chou Liu, Hung-Hsiang Wang
  • Patent number: 8897839
    Abstract: A method for controlling a distributed antenna system includes the following steps. A target propagation delay value is defined according to a transmit/receive transition gap. Propagation delay time of a service antenna unit corresponding to a base station is estimated. The service antenna unit is turned on to perform downlink signal transmission, and the propagation delay time of the service antenna unit is compensated to the target propagation delay value.
    Type: Grant
    Filed: May 25, 2012
    Date of Patent: November 25, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Hung-Hsiang Wang, Hsin-An Hou
  • Publication number: 20140003371
    Abstract: A transmitter and an identification pattern transmission method thereof and a receiver and an identification pattern detection method thereof are provided. The transmitter includes a random sequence generator, a mapper and a resource allocation unit. The identification pattern transmission method includes following steps. A random sequence is generated. The random sequence is mapped to an identification pattern. The identification pattern is partitioned into a plurality of identification segments. The identification segments are allocated to a plurality of communication resource blocks to generate a transmitted signal having information of the identification pattern, where each of the communication resource blocks is spaced from another adjacent communication resource block by a predetermined number of symbols and/or a predetermined number of subcarriers.
    Type: Application
    Filed: June 25, 2013
    Publication date: January 2, 2014
    Inventors: Chorng-Ren Sheu, Hung-Hsiang Wang, Chuan-Yuan Huang
  • Patent number: 8462862
    Abstract: A symbol timing method for a multi-carrier system is provided, including: receiving an input symbol; executing a correlation operation by using a first summation window with a size smaller than a duplicated data to generate a first characteristic signal; determining a first search region according to a first predetermined threshold and the first characteristic signal and searching a local peak value in the first search region; locating a right edge point of the first characteristic signal according to a difference value and the local peak value; obtaining a coarse symbol timing position for a following input symbol according to a predetermined movement and the right edge point; and outputting the coarse symbol timing position to a signal transformation module, wherein signal transformation is executed by the signal transformation module according to the coarse symbol timing position.
    Type: Grant
    Filed: February 18, 2010
    Date of Patent: June 11, 2013
    Assignee: Industrial Technology Research Institute
    Inventor: Hung-Hsiang Wang
  • Publication number: 20130122830
    Abstract: A method for controlling a distributed antenna system includes the following steps. A target propagation delay value is defined according to a transmit/receive transition gap. Propagation delay time of a service antenna unit corresponding to a base station is estimated. The service antenna unit is turned on to perform downlink signal transmission, and the propagation delay time of the service antenna unit is compensated to the target propagation delay value.
    Type: Application
    Filed: May 25, 2012
    Publication date: May 16, 2013
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Hung-Hsiang Wang, Hsin-An Hou
  • Patent number: 8095856
    Abstract: A system and method corrects erroneous sections received in a memory by pre-filling at least a portion of memory with a pre-defined value. If a received data packet is valid, the valid received data packet is stored over the pre-defined values in the memory location associated with the valid data packet. Values associated with a data segment and an adjacent data segment in the memory are compared to the pre-defined value. When the values of each data segment match the pre-defined values, then each data segment is an erroneous data segment.
    Type: Grant
    Filed: September 14, 2007
    Date of Patent: January 10, 2012
    Assignee: Industrial Technology Research Institute
    Inventor: Hung-Hsiang Wang
  • Patent number: D1024932
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: April 30, 2024
    Assignee: WALSIN LIHWA CORPORATION
    Inventors: Ko-Ming Chen, Shih-Hsiang Wang, An-Hung Lin, Min-Chuan Wu, Shao-Pei Lin, Chien-Chung Ni, Chun-Ying Lin