Patents by Inventor Hung Hsieh

Hung Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12362300
    Abstract: An electronic substrate and an electronic device are provided. The electronic substrate includes a base, a conductive electrode, and a first layer. The conductive electrode and the first layer are disposed on the base, the first layer surrounds the conductive electrode and overlaps an edge portion of the conductive electrode. In a cross-sectional view, the first layer is divided into a first part and a second part, the conductive electrode is located between the first part and the second part, and a width of the first part is different from a width of the second part.
    Type: Grant
    Filed: October 19, 2023
    Date of Patent: July 15, 2025
    Assignee: Innolux Corporation
    Inventors: Chueh Yuan Nien, Chao-Chin Sung, Chia-Hung Hsieh, Mei Cheng Liu
  • Patent number: 12345498
    Abstract: A grenade device of a toy gun with an adjustable firing muzzle provided by the present invention comprises: a case, a pressure chamber, a projectile chamber, a switch valve, a launch tube, an outer cover, and a switch cover. The pressure chamber is in the case and receives a pressurized fluid. The projectile chamber is in the case and loaded plural projectile bodies in. The switch valve is between the pressure chamber and the pressure inlet, and is in a starting position to guide the pressurized fluid from the pressure chamber to the projectile chamber. The launch tube has a first and second end. The launch tube cooperates with the pressure chamber and the pressurized fluid to inject the projectile bodies. The outer cover is connected with the case, and has an opening. The switch cover has a through hole and is at a first or second position.
    Type: Grant
    Filed: February 14, 2024
    Date of Patent: July 1, 2025
    Assignee: KRISS INDUSTRIES ASIA LTD.
    Inventor: Kai-Hung Hsieh
  • Publication number: 20250198724
    Abstract: A grenade device of a toy gun with an adjustable firing muzzle provided by the present invention comprises: a case, a pressure chamber, a projectile chamber, a switch valve, a launch tube, an outer cover, and a switch cover. The pressure chamber is in the case and receives a pressurized fluid. The projectile chamber is in the case and loaded plural projectile bodies in. The switch valve is between the pressure chamber and the pressure inlet, and is in a starting position to guide the pressurized fluid from the pressure chamber to the projectile chamber. The launch tube has a first and second end. The launch tube cooperates with the pressure chamber and the pressurized fluid to inject the projectile bodies. The outer cover is connected with the case, and has an opening. The switch cover has a through hole and is at a first or second position.
    Type: Application
    Filed: February 14, 2024
    Publication date: June 19, 2025
    Inventor: KAI-HUNG HSIEH
  • Publication number: 20250194187
    Abstract: A method of preparing a PMOS transistor includes: providing a substrate, and forming source-drain trenches on the substrate; growing SiGe material within the source-drain trenches to form a SiGe layer, and growing a Si thin film layer on a surface of the SiGe layer to form a stacked layer structure of the SiGe layer and the Si thin film layer, and growing a first Co thin film layer on the stacked layer structure, and performing an annealing treatment, to make Co in the first Co thin film layer react with Si in the Si thin film layer to form a first CoSi2 thin film layer; an overall structure formed within the source-drain trenches is a source-drain, and the first CoSi2 thin film layer is an upper structure of the source-drain.
    Type: Application
    Filed: August 5, 2024
    Publication date: June 12, 2025
    Inventor: MING-HUNG HSIEH
  • Patent number: 12326377
    Abstract: A method for calibrating sensed force of a touch pad module is provided. The touch pad module includes a touch pad and force sensing elements disposed therebeneath. The method includes: obtaining a force reference table obtained before the touch pad module is assembled with an electronic device, the force reference table including a first data, which includes a first point of the touch pad and first force reference values corresponding to the first point and respectively corresponding to the force sensing elements; placing a calibration block on the first point after the touch pad module is assembled with the electronic device, so the force sensing elements respectively obtain first force test values corresponding to the first point; calculating first compensation ratios according to the first force reference values and the first force test values; and inputting the first compensation ratios into the force reference table.
    Type: Grant
    Filed: May 18, 2023
    Date of Patent: June 10, 2025
    Assignee: Primax Electronics Ltd.
    Inventors: Chieh-Hung Hsieh, Hsueh-Chao Chang, Sian-Yi Chiu, Chao-Wei Lee, Wei-Chiang Huang
  • Patent number: 12324302
    Abstract: An example dual plate Organic Light-Emitting Field-Effect Transistor (OLET) display device includes a first plate device having a first substrate; a gate layer adjacent to the first substrate; and a dielectric layer adjacent to the gate layer. A second plate device is connected to the first plate device. The second plate device includes a second substrate; a source/drain layer adjacent to the second substrate; and a stacked active organic layer adjacent to the source/drain layer. The first plate device and the second plate device are to be independently fabricated and joined together to position the stacked active organic layer adjacent to the dielectric layer.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: June 3, 2025
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Hsing-Hung Hsieh, Kuan-Ting Wu, Chi Hao Chang
  • Publication number: 20250169085
    Abstract: Semiconductor device isolation is provided. In one aspect, a semiconductor device include a spiral inductor. The semiconductor device includes a patterned ground shield (PGS) electrically coupled with the spiral inductor. The semiconductor device includes a filter configured to exchange energy with the PGS. The semiconductor device includes a circuit vertically spaced from the inductor, the PGS disposed between the circuit and the spiral inductor.
    Type: Application
    Filed: November 20, 2023
    Publication date: May 22, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Chun Chang, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Jun-De Jin, Ching-Chung Hsu, Chung-Long Chang, Hua-Chou Tseng
  • Publication number: 20250152634
    Abstract: A method for enhancing an expression of insulin like growth factor 1 receptor in an umbilical cord mesenchymal stem cell is provided. The method includes culturing the umbilical cord mesenchymal stem cell expressing insulin-like growth factor 1 receptor in a medium containing platelet-derived growth factor BB (PDGF-BB) to enhance the expression of insulin like growth factor 1 receptor in the umbilical cord mesenchymal stem cell.
    Type: Application
    Filed: January 15, 2025
    Publication date: May 15, 2025
    Applicant: China Medical University
    Inventors: Woei-Cherng Shyu, Chen-Huan Lin, Wei Lee, Chia-Hung Hsieh, Chung-Y. Hsu, Chang-Hai Tsai
  • Patent number: 12288504
    Abstract: The disclosure provides an electrical apparatus. The electrical apparatus includes a timing controller, a data driver circuit, and a display panel. The timing controller is configured to receive at least one data polarity configuration signal. The timing controller generates and outputs a plurality of polarity inversion signals according to the data polarity configuration signal. The phases of the polarity inversion signals are different. The data driver circuit is coupled to the timing controller. The data driver circuit is configured to receive the polarity inversion signals. The display panel is coupled to the data driver circuit. The display panel is configured to display images. The data driver circuit drives the display panel to display the images according to the polarity inversion signals.
    Type: Grant
    Filed: March 7, 2023
    Date of Patent: April 29, 2025
    Assignee: Innolux Corporation
    Inventors: Ming-Feng Hsieh, Pei-Hung Hsieh, Meng-Chang Tsai
  • Patent number: 12284004
    Abstract: An example display for a computing device includes: a display layer; a dynamic liquid crystal antenna formed substantially parallel to the display layer, the dynamic liquid crystal antenna comprising: a liquid crystal layer; a pixelated driving electrode to selectively activate pixels of the liquid crystal layer to form an antenna structure; and a common electrode extending between the liquid crystal layer and the display layer to isolate the liquid crystal layer from the display layer.
    Type: Grant
    Filed: October 31, 2022
    Date of Patent: April 22, 2025
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Hsing-Hung Hsieh, Isaac Lagnado, Super Liao
  • Publication number: 20250113479
    Abstract: A semiconductor device includes a substrate and at least one functional layer. The functional layer includes: a first signal line layer and a second signal line layer, stacked on the substrate in a vertical direction, the first signal line and the second signal line each extends in a first horizontal direction; and each has a body extension portion and a lead-out end, and for each of the first signal line and the second signal line, the lead-out end is located at least one end of the body extension portion; orthographic projection of the body extension portion of the first signal line and the second signal line on the substrate are overlapping; and orthographic projections of the lead-out ends of the first signal line and the second signal line on the substrate are non-overlapping. This solution facilitates the independent lead-out of signal lines from each layer.
    Type: Application
    Filed: May 22, 2024
    Publication date: April 3, 2025
    Inventor: MING-HUNG HSIEH
  • Publication number: 20250103284
    Abstract: An electronic device includes a first buffer, a second buffer, and a multiplexer. The first buffer receives and stores first data when the first buffer is not full, and performs a First-In-First-Out (FIFO) operation on the first data. The second buffer receives and stores second data when the first buffer is full, and performs the FIFO operation on the second data. The multiplexer is electrically connected between the first buffer and the second buffer. The multiplexer receives the first data from outside of the electronic device, or it receives the second data from the second buffer. A depth of the first buffer is less than that of the second buffer.
    Type: Application
    Filed: September 12, 2024
    Publication date: March 27, 2025
    Inventors: Ming-Hung HSIEH, Pei-Lun WU, Hsin-Yu CHANG, Yu-Cheng WU
  • Patent number: 12226437
    Abstract: A method for enhancing an expression of insulin like growth factor 1 receptor in an umbilical cord mesenchymal stem cell is provided. The method includes culturing the umbilical cord mesenchymal stem cell expressing insulin-like growth factor 1 receptor in a medium containing platelet-derived growth factor BB (PDGF-BB) to enhance the expression of insulin like growth factor 1 receptor in the umbilical cord mesenchymal stem cell.
    Type: Grant
    Filed: November 7, 2022
    Date of Patent: February 18, 2025
    Assignee: China Medical University
    Inventors: Woei-Cherng Shyu, Chen-Huan Lin, Wei Lee, Chia-Hung Hsieh, Chung-Y. Hsu, Chang-Hai Tsai
  • Patent number: 12218055
    Abstract: The present disclosure provides a semiconductor device structure with conductive contact of different widths and a method for preparing the semiconductor device structure. The semiconductor device structure includes a dielectric layer disposed over a semiconductor substrate, and a first conductive contact penetrating through the dielectric layer. The first conductive contact includes a first metal filling layer and a first metal silicide structure surrounding the first metal filling layer. The semiconductor device structure also includes a second conductive contact penetrating through the dielectric layer. The second conductive contact includes a second metal filling layer and a second metal silicide structure surrounding the second metal filling layer, and a first width of the first conductive contact is different from a second width of the second conductive contact.
    Type: Grant
    Filed: April 15, 2024
    Date of Patent: February 4, 2025
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventor: Ming-Hung Hsieh
  • Publication number: 20250038106
    Abstract: A bond structure is provided. The bond structure includes a seed layer and a conductive structure. The conductive structure includes a via portion over the seed layer and a plurality of wires protruding from the via portion.
    Type: Application
    Filed: July 28, 2023
    Publication date: January 30, 2025
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chun-Wei CHIANG, Yung-Sheng LIN, I-Ting LIN, Ping-Hung HSIEH, Chih-Yuan HSU
  • Patent number: 12209735
    Abstract: A light emitting device and a light source module are provided. The light emitting device includes a base, a conductive unit, a light unit, and a package. The base includes a first substrate and n through holes, and the through holes pass through the first substrate. The conductive unit includes m conductors that are separate from each other, and the conductors pass through the first substrate. The light unit is electrically connected to the conductors. The package includes a first package body surrounding the light unit and a second package body covering the light unit and the first package body. The first package body and the second package body have different optical properties. Furthermore, m and n are integers greater than or equal to 2, and m is greater than or equal to n.
    Type: Grant
    Filed: January 11, 2024
    Date of Patent: January 28, 2025
    Assignee: LITE-ON TECHNOLOGY CORPORATION
    Inventors: Shan-Hui Chen, Jin-Tsai Lin, Chang-Hung Hsieh
  • Publication number: 20250013022
    Abstract: An optical imaging lens adapted to limited working distance is disclosed. The optical imaging lens includes a first, a second, a third, a fourth, a fifth, a sixth lens elements and an image sensing element sequentially along an optical axis from an object-side to an image-side. The first to the sixth lens element each includes an object-side surface facing toward an object-side as well as an image-side surface facing toward an image-side. The first lens element is a wide-angle lens element. The second to the sixth lens element are a combination of aspherical lens element, molded glass lens element, and free-form surface lens element. A field of view of the optical imaging lens is greater than or equal to 100 degrees, and the optical imaging lens is a wide-angle lens.
    Type: Application
    Filed: June 28, 2024
    Publication date: January 9, 2025
    Applicant: E-PIN OPTICAL INDUSTRY CO., LTD
    Inventors: Chih-Hsiang Yin, Cheng-Hung Hsieh
  • Patent number: 12191811
    Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.
    Type: Grant
    Filed: July 27, 2023
    Date of Patent: January 7, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Fu-Huan Tsai, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Han-Min Tsai, Hong-Lin Chu
  • Patent number: 12190234
    Abstract: An anomaly detection device based on a generative adversarial network architecture, which uses the single-type training data composed of multiple normal signals to train an anomaly detection model. The anomaly detection device includes an encoder, a generator, a discriminator, and a random vector generator. In the training phase of anomaly detection model, the random latent vectors generated by the random vector generator are sequentially input to a generator to generate the synthesized signals with the same dimension as the normal signals. The synthesized signals are sequentially input into a discriminator to output the corresponding discriminant values. When the corresponding discriminant values are under the predetermined threshold, the corresponding synthesized signals are selected as the anomalous class training data, and the real normal signals are selected as the normal class training data.
    Type: Grant
    Filed: December 29, 2020
    Date of Patent: January 7, 2025
    Assignee: Industrial Technology Research Institute
    Inventors: Yi-Hsiang Chao, Chih-Hung Hsieh, Ming-Yu Shih
  • Patent number: 12181743
    Abstract: A display device includes an aperture layer, a first plurality of light sources, a second plurality of light sources, and a piezo material coupled to the first plurality of light sources and the second plurality of light sources. The aperture layer includes a first plurality of apertures and a second plurality of apertures, and the first plurality of light sources is arranged to correspond to the first plurality of apertures, and the second plurality of light sources is arranged to correspond to the second plurality of apertures. The piezo material is configured to alter a first position of the first plurality of light sources relative to the first plurality of apertures, and to alter a second position of the second plurality of light sources relative to the second plurality of apertures.
    Type: Grant
    Filed: January 31, 2024
    Date of Patent: December 31, 2024
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Hsing-Hung Hsieh, Kuan-Ting Wu, Chi-Hao Chang