Abstract: A manufacturing method of an electrode of an energy storage element includes: providing a substrate into microwave plasma equipment; introducing a carrier gas and a carbon precursor gas into the microwave plasma equipment; forming multi-layer graphene walls on the substrate through microwave plasma chemical vapor deposition; and immersing the substrate containing the multi-layer graphene walls in an electrolyte solution to perform electrochemical activation treatment, so that ions in the electrolyte solution are intercalated between adjacent graphene walls. A volume ratio of the carrier gas to the carbon precursor gas is 1:10 to 10:1. An electrode of an energy storage element is also provided.

Abstract: A method of manufacturing a current collector of an energy storage device includes the following. A substrate is provided. A modified layer is formed on the substrate using a microwave plasma chemical vapor deposition process. The modified layer includes nanographene and has a thickness of 1 nm to 500 nm. In the microwave plasma chemical vapor deposition process, a microwave frequency is 300 MHz to 300 GHz, a microwave power is 500 W to 75000 W, a temperature is 25° C. to 600° C., and a deposition time is less than 30 minutes. The microwave plasma chemical vapor deposition process includes the following. Inert gas or stable gas is passed in. Hydrocarbon gas and hydrogen are passed in. Microwaves are applied to generate plasma. The hydrocarbon gas and the hydrogen are ionized. Nanographene is formed on the substrate.

Abstract: Methods for fabricating an optical waveguide and a display device and a photomask used therein is provided. Firstly, a photomask is provided, wherein the photomask has light blocking structures regularly distributed. A first light curing resin layer is formed on a first transparent substrate. Next, the photomask is placed on the first light curing resin layer. The first light curing resin layer is irradiated and cured with incident light through the photomask and the light blocking structures to have a first curing level and a first refractive index. The first curing level and the first refractive index, corresponding to each other, are periodically distributed. Finally, the photomask is removed from the first light curing resin layer to form an optical waveguide with the first light curing resin layer having the first curing level that is periodically distributed and the first transparent substrate.

Abstract: A method for preparing organic light emitting diode (OLED) by using thermal transfer film is revealed. A first transfer layer on a thermal transfer film is transferred onto a substrate by thermal transfer printing for overcoming shortcomings of the conventional vacuum evaporation including complicated processes and low material efficiency. Only less than 50% material reaches the substrate after the vacuum evaporation.

Abstract: A thermal transfer film for preparing Organic Light Emitting Diode (OLED) and a method for preparing the same are revealed. A heat resistant layer and a functional layer are disposed on a base layer respectively by coating. And a transfer layer is arranged over the functional layer. The transfer layer is heated by a thermal print head (TPH) and then is transferred onto a substrate. During the conventional vacuum evaporation used for preparing the OLED, material that reaches the substrate is less than 50%. Compared with the vacuum evaporation, the thermal transfer film and the method for preparing the same solve the problem of low material efficiency.

Abstract: A method for continuously preparing organic light emitting diode (OLED) by using thermal transfer film is revealed. At least two thermal transfer layers are transferred onto a substrate in turn by thermal transfer printing for overcoming shortcomings of the conventional vacuum evaporation including complicated processes and low material efficiency. Only less than 50% material reaches the substrate after the vacuum evaporation.

Abstract: A pixel structure of an electroluminescent display panel having a first sub-pixel region and a second sub-pixel region is disclosed. The pixel structure includes a first organic light emitting layer disposed in the first sub-pixel region and the second sub-pixel region. The first organic light emitting layer is a single layered organic light emitting layer made of one single organic light emitting material. A cavity length of the first sub-pixel region is shorter than a cavity length of the second sub-pixel region so as to enable the first sub-pixel region and the second sub-pixel region to respectively provide a first primary color light and a second primary color light. A peak wavelength of the second primary color light is larger than a peak wavelength of the first primary color light.

Abstract: An iridium complex is disclosed, which has a structure represented by the following formula (I): wherein each of Z1 and Z3 represents an atomic group for forming a nitrogen-containing heteroaryl group or a nitrogen-containing heterocycloalkenyl group; Z2 represents an atomic group for forming an aryl group, a heteroaryl group, a cycloalkenyl group or a heterocycloalkenyl group; Y represents an atomic group for forming a 5-membered nitrogen-containing heterocycloalkenyl group; each of R1, R2, R3 and R4 represents a hydrogen atom or a substituent; m is 1 or 2; a, b and d is 0 or any positive integer; and c is an integer of from 0 to 2.

Abstract: Disclosed herein is a light emitting device, which includes a first substrate, a protective layer, a second substrate, a buffer member and a sealant. The first substrate has an illuminating member thereon. The protective layer covers the illuminating member and has a first coefficient of thermal expansion. The second substrate is disposed over the protective layer. The buffer member is disposed between the first and second substrates and surrounds the protective layer, wherein the buffer member has a second coefficient of thermal expansion which is less than the first coefficient. The sealant surrounds the buffer member and seals off the space between the first and second substrates, wherein the sealant has a third coefficient of thermal expansion which is less than the second coefficient.

Abstract: Disclosed herein is a light emitting device, which includes a first substrate, a protective layer, a second substrate, a buffer member and a sealant. The first substrate has an illuminating member thereon. The protective layer covers the illuminating member and has a first coefficient of thermal expansion. The second substrate is disposed over the protective layer. The buffer member is disposed between the first and second substrates and surrounds the protective layer, wherein the buffer member has a second coefficient of thermal expansion which is less than the first coefficient. The sealant surrounds the buffer member and seals off the space between the first and second substrates, wherein the sealant has a third coefficient of thermal expansion which is less than the second coefficient.

Abstract: An organic light emitting diode with Ir complex is disclosed in this specification, wherein the Ir complex is used as the phosphorous emitter. The chemical containing pyridyl triazole or pyridyl imidazole functional group is used as the auxiliary monoanionic bidentate ligand in the mentioned Ir complex, so that the CIE coordinate of the mentioned Ir complex is adjustable and the light emitting performance of the Ir complex is improved.

Abstract: The present invention discloses conjugated compounds containing heteroatom-centered arylsilane derivatives and their applications as host materials, electron transport materials, or hole transport materials in an organic electroluminescent device. The general structure of the conjugated compounds containing heteroatom-centered arylsilane derivatives is as follows: where X1, X2, X3, and X4 can be identical or different and X1, X2, X3, and X4 are independently selected from the group consisting of the following: H, B, N, P?O, Si—R9; and R1, R2, R3, R4, R5, R6, R7, R8, and R9 can be identical or different and R1, R2, R3, R4, R5, R6, R7, R8, and R9 are independently selected from aryl group or heterocyclic aryl group containing one or more substituents.

Abstract: An iridium complex is disclosed, which has a structure represented by the following formula (I): wherein each of Z1 and Z3 represents an atomic group for forming a nitrogen-containing heteroaryl group or a nitrogen-containing heterocycloalkenyl group; Z2 represents an atomic group for forming an aryl group, a heteroaryl group, a cycloalkenyl group or a heterocycloalkenyl group; Y represents an atomic group for forming a 5-membered nitrogen-containing heterocycloalkenyl group; each of R1, R2, R3 and R4 represents a hydrogen atom or a substituent; m is 1 or 2; a, b and d is 0 or any positive integer; and c is an integer of from 0 to 2.

Abstract: The present invention discloses conjugated compounds containing heteroatom-centered arylsilane derivatives and their applications as host materials, electron transport materials, or hole transport materials in an organic electroluminescent device. The general structure of the conjugated compounds containing heteroatom-centered arylsilane derivatives is as follows: where X1, X2, X3, and X4 can be identical or different and X1, X2, X3, and X4 are independently selected from the group consisting of the following: H, B, N, P?O, Si—R9; and R1, R2, R3, R4, R5, R6, R7, R8, and R9 can be identical or different and R1, R2, R3, R4, R5, R6, R7, R8, and R9 are independently selected from aryl group or heterocyclic aryl group containing one or more substituents.

Abstract: The present invention discloses triptycene derivatives and their application as a host emitting material, an electron transport material, or a hole transport material in an organic electronic device.

Abstract: An organic light emitting diode with Ir complex is disclosed in this specification, wherein the Ir complex is used as the phosphorous emitter. The chemical containing pyridyl triazole or pyridyl imidazole functional group is used as the auxiliary monoanionic bidentate ligand in the mentioned Ir complex, so that the CIE coordinate of the mentioned Ir complex is adjustable and the light emitting performance of the Ir complex is improved.

Abstract: An indium complex is disclosed, which has a structure represented by the following formula (I): wherein each of Z1 and Z3 represents an atomic group for forming a nitrogen-containing heteroaryl group or a nitrogen-containing heterocycloalkenyl group; Z2 represents an atomic group for forming an aryl group, a heteroaryl group, a cycloalkenyl group or a heterocycloalkenyl group; Y represents an atomic group for forming a 5-membered nitrogen-containing heterocycloalkenyl group; each of R1, R2, R3 and R4 represents a hydrogen atom or a substituent; m is 1 or 2; a, b and d is 0 or any positive integer; and c is an integer of from 0 to 2.