Abstract: A locking sleeve includes an inner sleeve and an outer sleeve sleevedly disposed thereon. The inner sleeve has an inner body and a shank extending outwards from the inner body. The outer sleeve has an outer body where an engagement space is enclosed and opposite first and second ends are respectively defined and a plurality of slots cutting into the outer body and extending from the second end to divide the outer body into a plurality of clamping portions with elasticity. Each clamping portion has an engagement unit formed on an edge thereof. When a head of a fastening unit is situated in the engagement space, the engagement units clamp and engage the head so that the fastening unit is quickly and firmly positioned to facilitate the following fastening operation, and the locking sleeve is more convenient to use.

Abstract: A recessed head screw includes a shank, a head, a drilling portion and threads. The head includes a top face where a socket portion is formed. The socket portion has a driving recess and a driving socket formed between the driving recess and the top face. The driving socket communicates with the driving recess. A diameter value of the driving socket is a maximum circumscribed circle diameter value of the driving recess plus a value within 20% of the maximum circumscribed circle diameter value. When a driving tool engages the socket portion, the driving socket can be in close-fitting engagement with the driving tool to increase the engagement between the driving tool and the head and prevent the screw from falling off the tool easily during the driving action of the tool, thereby delivering a full driving force to the head to improve the working efficiency and smoothness.

Abstract: A recessed head screw includes a shank, a head, a drilling portion and threads. The head includes a top face where a socket portion is formed. The socket portion has a driving recess and a driving socket formed between the driving recess and the top face. The driving socket communicates with the driving recess. A diameter value of the driving socket is a maximum circumscribed circle diameter value of the driving recess plus a value within 20% of the maximum circumscribed circle diameter value. When a driving tool engages the socket portion, the driving socket can be in close-fitting engagement with the driving tool to increase the engagement between the driving tool and the head and prevent the screw from falling off the tool easily during the driving action of the tool, thereby delivering a full driving force to the head to improve the working efficiency and smoothness.

Abstract: A pipeline fastener defines at least one hole formed on a hollow shank with a channel formed therein and has a chip-removing section at least formed between the hole and the channel of the shank. A diameter of the chip-removing section is bigger than a bore diameter of the hole. Accordingly, by the chip-removing section with the bigger diameter, burrs which are originally formed at a convergence between a bore surface of the hole and a periphery of the shank can be removed. Consequently, following burr-cleaning procedures are reduced to lower the production cost, and damages of the burrs to other objects at the time of using the pipeline fastener are further prevented, thereby improving the safety of the use efficiently.

Abstract: A pipeline fastener defines at least one hole formed on a hollow shank with a channel formed therein and has a chip-removing section at least formed between the hole and the channel of the shank. A diameter of the chip-removing section is bigger than a bore diameter of the hole. Accordingly, by the chip-removing section with the bigger diameter, burrs which are originally formed at a convergence between a bore surface of the hole and a periphery of the shank can be removed. Consequently, following burr-cleaning procedures are reduced to lower the production cost, and damages of the burrs to other objects at the time of using the pipeline fastener are further prevented, thereby improving the safety of the use efficiently.

Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate and includes at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.

Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode is provided. The gate is disposed over a substrate, wherein the gate comprises at least one layer of aluminum-yttrium alloy nitride. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source electrode and the drain electrode are disposed over the semiconductor layer.

Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate and includes at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.

Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.

Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.

Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a soruce/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one layer of aluminum-yttrium alloy nitride. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.

Abstract: A sputtering process of indium tin oxide (ITO) is provided. The sputtering process includes the following steps. First, a substrate is moved into a reaction chamber, wherein an ITO target is disposed inside the reaction chamber. Then, a plasma gas and a reaction gas are provided into the reaction chamber to form an ITO layer on the substrate. The reaction gas comprises at least hydrogen having a volume ratio of 1%˜4% based on the total gas volume in the reaction chamber. Furthermore, a method of forming an indium tin oxide layer is also provided.

Abstract: A magnetron sputtering process is provided. First, a reaction chamber including a substrate base, a target comprised of Al or its alloy or other metals or their alloy with higher melting point, and a magnetron device. Next, a substrate is disposed onto the substrate base. The pressure within the reaction chamber is set from 0.1 pa˜0.35 pa, and then a sputtering process is initiated within the reaction chamber to deposit a film on the substrate. Because the pressure within the reaction chamber is set from 0.1 pa˜0.35 pa, a better step coverage can be achieved during the sputtering process so that a continuous film can be deposited on the substrate without the broken or defective climbing portion of the film. Therefore, the yield of film deposition on the substrate can also be significantly increased.

Abstract: A needle-changing mechanism for use in a multiple-needle embroidery sewing machine is disclosed for controlling the changing of a selected sewing needle to a working position on the sewing platform of the sewing machine. The needle-changing mechanism includes a sensing plate having a gap portion sandwiched between two solid side portions. The position of the gap portion is changed by moving the sensing plate according to which needle is currently selected as the working needle. A plurality of photo detectors equal in number to the number of the needles of the sewing machine are arranged at equal intervals along a straight line relative to the axial orientation of the sensing plate such that the gap portion and the side portions of the sensing plate cause the photo detectors to output a pattern of positioning signals. A controller, which receives and processes output signals from the photo detectors, is used to control the movement of the needles so that the desired needle is positioned as the working needle.