Patents by Inventor Hung-Jae Cho

Hung-Jae Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming aluminum oxide as a gate dielectric
    Patent number: 6579767
    Abstract: A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. A thin SiO2 layer is thermally grown on top of the semiconductor device by using a wet H2/O2 or a dry O2. And then, an aluminum oxide layer is formed on top of the semiconductor substrate with doping a dopant in situ. A conductive layer is formed on top of the Al2O3 layer. Finally, the conductive layer and the Al2O3 layer are patterned into the gate structure. The dopant is a material selected from a group consisting of Si, Zr, Hf, Nb or the like.
    Type: Grant
    Filed: December 4, 2000
    Date of Patent: June 17, 2003
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Dae-Gyu Park, Se-Aug Jang, Jeong-Youb Lee, Hung-Jae Cho, Jung-Ho Kim
  • Method for forming aluminum oxide as a gate dielectric
    Publication number: 20010029092
    Abstract: A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. A thin SiO2 layer is thermally grown on top of the semiconductor device by using a wet H2/O2 or a dry O2. And then, an aluminum oxide layer is formed on top of the semiconductor substrate with doping a dopant in situ. A conductive layer is formed on top of the Al2O3 layer. Finally, the conductive layer and the Al2O3 layer are patterned into the gate structure. The dopant is a material selected from a group consisting of Si, Zr, Hf, Nb or the like.
    Type: Application
    Filed: December 4, 2000
    Publication date: October 11, 2001
    Inventors: Dae-Gyu Park, Se-Aug Jang, Jeong-Youb Lee, Hung-Jae Cho, Jung-Ho Kim