Abstract: A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.

Abstract: A composite material is provided. The composite material includes (a1) first polyamide polymerized from C10-12 diamine and terephthalic acid or an ester thereof, or (a2) second polyamide polymerized from C8-12 diamine, terephthalic acid or an ester thereof, and 4-aminoalkyl benzoic acid or an ester thereof; and (b) sheet-shaped material having an aspect ratio of 40 to 80. The composite material can be used in the lens base and the barrel of a lens module.

Abstract: A method of forming a copolymer includes reacting with to form a salt. x parts by mole of the salt with y parts by mole of are reacted to form the copolymer having a chemical structure as wherein m=4-10, n=4-6, and x:y=1:9 to 4:6. The copolymer may have a relative viscosity of 1.5 to 4.0.

Abstract: A method of forming a film is provided, which includes providing a sheet from a polyamide composition; and biaxial stretching of the sheet to form a film, wherein the polyamide composition includes a blend of a first polyamide and a second polyamide. The first polyamide has a repeating unit of and the second polyamide has repeating units of The second polyamide is a crystalline random copolymer. The sheet of the polyamide composition is biaxially stretched at a rate of 20 mm/sec to 100 mm/sec.

Abstract: A method of forming a film is provided, which includes providing a sheet from a polyamide composition; and biaxial stretching of the sheet to form a film, wherein the polyamide composition includes a blend of a first polyamide and a second polyamide. The first polyamide has a repeating unit of and the second polyamide has repeating units of The second polyamide is a crystalline random copolymer. The sheet of the polyamide composition is biaxially stretched at a rate of 20 mm/sec to 100 mm/sec.

Abstract: A blend is provided, which includes 50 to 99 parts by weight of PET and 1 to 50 parts by weight of modified PEF. The modified PEF is polymerized of diacid, ester of diacid, or a combination thereof and polyol. The diacid, ester of diacid, or a combination thereof includes (1) furan dicarboxylic acid, dialkyl furandicarboxylate, or a combination thereof or (2) furan dicarboxylic acid, dialkyl furandicarboxylate, or a combination thereof and spiro-diacid. The polyol includes (3) C2-C14 polyol or (4) C2-C14 polyol and spiro-diol. The diacid, ester of diacid, or a combination thereof includes (1) furan dicarboxylic acid, dialkyl furandicarboxylate, or a combination thereof, the polyol includes 1 to 3 parts by mole of (4) C2-C14 polyol and spiro-diol, wherein the spiro-diol and the furan dicarboxylic acid, dialkyl furandicarboxylate, or a combination thereof have a weight ratio of 500 ppm to 4000 ppm.

Abstract: A liquid crystal polymer (LCP) composite film is provided. The LCP composite film includes 88 to 99 weight percent of a liquid crystal polymer based on the total weight of the LCP composite film and 1 to 12 weight percent of a toughening agent based on the total weight of the LCP composite film. The toughening agent includes a copolymer selected from a group consisting of a thermoplastic polyolefin elastomer, a glycidyl methacrylate copolymer, a polystyrene elastomer, a polyester elastomer, and a mixture thereof.

Abstract: A liquid crystal polymer (LCP) composite film is provided. The LCP composite film includes 88 to 99 weight percent of a liquid crystal polymer based on the total weight of the LCP composite film and 1 to 12 weight percent of a toughening agent based on the total weight of the LCP composite film. The toughening agent includes a copolymer selected from a group consisting of a thermoplastic polyolefin elastomer, a glycidyl methacrylate copolymer, a polystyrene elastomer, a polyester elastomer, and a mixture thereof.

Abstract: A method for forming quarter-pitch patterns is described. Two resist layers are formed. The upper resist layer is defined into first patterns. A coating that contains or generates a reactive material making a resist material dissolvable is formed over the lower resist layer and the first patterns. The reactive material is diffused into a portion of each first pattern and portions of the lower resist layer between the first patterns to react with them. The coating is removed. A development step is performed to remove the portions of the first patterns and the portions of the lower resist layer, so that the lower resist layer is patterned into second patterns. Spacers are formed on the sidewalls of the remaining first patterns and the second patterns. The remaining first patterns are removed, and portions of the second patterns are removed using the spacers on the second patterns as a mask.

Abstract: A double patterning process is described. A substrate having a first area and a second area is provided. A target layer is formed over the substrate. A patterned first photoresist layer is formed over the target layer, wherein the patterned first photoresist layer has openings and has a first thickness in the first area, and at least a portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness. A second photoresist layer is then formed covering the patterned first photoresist layer and filling in the openings.

Abstract: A method for forming quarter-pitch patterns is described. Two resist layers are formed. The upper resist layer is defined into first patterns. A coating that contains or generates a reactive material making a resist material dissolvable is formed over the lower resist layer and the first patterns. The reactive material is diffused into a portion of each first pattern and portions of the lower resist layer between the first patterns to react with them. The coating is removed. A development step is performed to remove the portions of the first patterns and the portions of the lower resist layer, so that the lower resist layer is patterned into second patterns. Spacers are formed on the sidewalls of the remaining first patterns and the second patterns. The remaining first patterns are removed, and portions of the second patterns are removed using the spacers on the second patterns as a mask.

Abstract: A double patterning process is described. A substrate having a first area and a second area is provided. A target layer is formed over the substrate. A patterned first photoresist layer is formed over the target layer, wherein the patterned first photoresist layer has openings and has a first thickness in the first area, and at least a portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness. A second photoresist layer is then formed covering the patterned first photoresist layer and filling in the openings.

Abstract: Pattern transfer is achieved by forming a first patterned hard mask layer with a circuit pattern and a plurality of dummy patterns on a substrate, forming a second pattern mask layer on the substrate, exposing the circuit pattern of the first pattern mask layer, and removing a portion of the substrate exposed by the first patterned mask layer, so as to transfer the circuit pattern to the substrate.

Abstract: Pattern transfer is achieved by forming a first patterned hard mask layer with a circuit pattern and a plurality of dummy patterns on a substrate, forming a second pattern mask layer on the substrate, exposing the circuit pattern of the first pattern mask layer, and removing a portion of the substrate exposed by the first patterned mask layer, so as to transfer the circuit pattern to the substrate.

Abstract: A method for semiconductor structure formation includes: providing a substrate; forming a first lower mask layer on the substrate; forming a first patterned mask on the first lower mask layer; forming a second lower mask layer on the first lower mask layer and overlaying the first patterned mask; forming a second patterned mask on the second lower mask layer without the second patterned mask overlapping the first patterned mask; etching and undercutting the first lower mask layer and the second lower mask layer to form the third patterned mask with the first patterned mask and the second patterned mask; etching the substrate by using the third patterned mask to form a plurality of islands; and removing the third patterned mask.

Abstract: The current invention relates to vaccines that use baculovirus vectors to expose a host organism to an immunogen, thereby eliciting an immune response. A pseudo-typed baculovirus is used to display hemagglutinin on the cell membrane in order to increase host immunogenicity.

Abstract: The present invention relates to a developer composition comprising: (a) alkali metal carbonate salt; (b) alkali metal bicarbonate salt; (c) nonionic surfactant of formula (I) below wherein, k, n and m are defined as in the description; and (d) nonionic surfactant of formula (II) below wherein, p and q are defined as in the description; wherein with respect to 100 parts by weight of water, the aforementioned component (a) is 0.1˜10 parts by weight, the aforementioned component (b) is 0.1˜10 parts by weight, the aforementioned component (c) is 0.1˜20 parts by weight, and the aforementioned component (d) is 0.1˜20 parts by weight. The present invention also relates to a developer.