Patents by Inventor Hung-Jung TSENG

Hung-Jung TSENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9323881
    Abstract: An integrated circuit layout includes a P-type active region and an N-type active region, and a plurality of trunks. The integrated circuit layout further includes a first metal connection connected to the P-type active region; and a second metal connection connected to the N-type active region. Each trunk of the plurality of trunks is electrically connected with the first metal connection and the second metal connection. Each trunk of the plurality of trunks is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks.
    Type: Grant
    Filed: July 25, 2014
    Date of Patent: April 26, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsiang-Jen Tseng, Ting-Wei Chiang, Wei-Yu Chen, Ruei-Wun Sun, Hung-Jung Tseng, Shun Li Chen, Li-Chun Tien
  • Publication number: 20140332971
    Abstract: An integrated circuit layout includes a P-type active region and an N-type active region, and a plurality of trunks. The integrated circuit layout further includes a first metal connection connected to the P-type active region; and a second metal connection connected to the N-type active region. Each trunk of the plurality of trunks is electrically connected with the first metal connection and the second metal connection. Each trunk of the plurality of trunks is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks.
    Type: Application
    Filed: July 25, 2014
    Publication date: November 13, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsiang-Jen TSENG, Ting-Wei CHIANG, Wei-Yu CHEN, Ruei-Wun SUN, Hung-Jung TSENG, Shun Li CHEN, Li-Chun TIEN
  • Patent number: 8819610
    Abstract: An integrated circuit layout includes a P-type active region, an N-type active region, a first metal connection, a second metal connection and a plurality of trunks. The plurality of trunks is formed substantially side-by-side, and in parallel with each other. The first metal connection is substantially disposed over the P-type active region, and is electrically connected with drain regions of PMOS transistors in the P-type active region. The second metal connection is substantially disposed over the N-type active region, and is electrically connected with drain regions of NMOS transistors in the N-type active region. The plurality of trunks is electrically connected with and is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks and is arranged to be located between two groups of trunks.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: August 26, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiang-Jen Tseng, Ting-Wei Chiang, Wei-Yu Chen, Ruei-Wun Sun, Hung-Jung Tseng, Shun Li Chen, Li-Chun Tien
  • Publication number: 20140195997
    Abstract: An integrated circuit layout includes a P-type active region, an N-type active region, a first metal connection, a second metal connection and a plurality of trunks. The plurality of trunks is formed substantially side-by-side, and in parallel with each other. The first metal connection is substantially disposed over the P-type active region, and is electrically connected with drain regions of PMOS transistors in the P-type active region. The second metal connection is substantially disposed over the N-type active region, and is electrically connected with drain regions of NMOS transistors in the N-type active region. The plurality of trunks is electrically connected with and is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks and is arranged to be located between two groups of trunks.
    Type: Application
    Filed: February 27, 2013
    Publication date: July 10, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsiang-Jen TSENG, Ting-Wei CHIANG, Wei-Yu CHEN, Ruei-Wun SUN, Hung-Jung TSENG, Shun Li CHEN, Li-Chun TIEN