Abstract: A foldable device may include a foldable layer and a hinge mechanism. The hinge mechanism may include at least one gear module that provides for synchronized movement of the hinge mechanism about a central plane of the hinge mechanism. A lock module may be coupled the hinge mechanism. The lock module may include a cam and a plate including a plurality of recesses. The lock module may selectively lock the hinge mechanism, and the foldable device, in one of a plurality of positions, based on a position of the cam in one of the recesses.

Abstract: An example computing device includes a flexible display coupled to a housing that includes a support plate having a first joint coupled to a first end of the support plate and a second joint coupled to a second end of the support plate. A slide module has a slot that guides a linear slide movement of the second joint along a linear path of movement within the slot as the support plate pivots about the first joint, where the support plate moves according to the first joint and the second joint to support at least the portion of the flexible display when the flexible display is unfolded and moves according to the first joint and the second joint to create a gap between at least a portion of the support plate and at least the portion of the flexible display when the flexible display is folded.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a cap layer adjacent to the MTJ and extended to overlap a top surface of the MTJ, a top electrode on the MTJ, a metal interconnection under the MTJ, a first inter-metal dielectric (IMD) layer around the MTJ, and a second IMD layer around the metal interconnection. Preferably, the cap layer is adjacent to the top electrode and the MTJ and on the second IMD layer and a top surface of the cap layer is higher than a top surface of the first IMD layer.

Abstract: The present disclosure provides IL-10 muteins and use of IL-10 muteins in fusion proteins. The IL-10 mutein or the fusion protein comprise one or more substitution on amino acids in position 104, position 107, and a combination thereof, relative to amino acids of wild-type IL-10. Advantageously, the IL-10 mutein or the fusion protein thereof are provided with reduced aggregation potency during purification and extended half-life.

Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.

Abstract: A method for drying a wafer includes a cleaning step, a liquid replacing step, and a drying step. In the cleaning step, a workpiece located in a process chamber is cleaned with a cleaning solution. In the liquid replacing step, a drying agent in gas phase is compressed to convert into liquid phase, and the drying agent in liquid phase is introduced to the process chamber to replace the cleaning solution. In the drying step, the cleaning solution is discharged out of the process chamber, and then the drying agent is converted from liquid phase back to gas phase and is discharged out of the process chamber.

Abstract: A foldable device may include a foldable layer and a hinge mechanism. The hinge mechanism may include at least one synchronizing module, at least one torsion module, and a cover module. The at least one synchronizing module may include a synchronizing gear assembly including a first linking gear in meshed engagement with a first rotating link, a second linking gear in meshed engagement with a second rotating link, and at least one intermediate gear in meshed engagement with the first linking gear and the second linking gear. The first rotating link may be coupled to a first housing of a computing device and the second rotating link may be coupled to a second housing of the computing device. The meshed engagement of the first and second rotating links may provide of synchronized, symmetric movement of the first and second housings about a central axis of the computing device.

Abstract: A semiconductor device including a magnetic tunneling junction (MTJ) and a hard mask on a substrate, a first inter-metal dielectric (IMD) layer around the MTJ, a first metal interconnection adjacent to the MTJ, a first barrier layer and a channel layer on the first IMD layer to directly contact the hard mask and electrically connect the MTJ and the first metal interconnection, and a stop layer around the channel layer.

Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a cap layer adjacent to the MTJ and extended to overlap a top surface of the MTJ, a top electrode on the MTJ, a metal interconnection under the MTJ, a first inter-metal dielectric (IMD) layer around the MTJ, and a second IMD layer around the metal interconnection. Preferably, the cap layer is adjacent to the top electrode and the MTJ and on the second IMD layer and a top surface of the cap layer is higher than a top surface of the first IMD layer.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming a first metal interconnection adjacent to the MTJ; forming a stop layer on the first IMD layer; removing the stop layer to form an opening; and forming a channel layer in the opening to electrically connect the MTJ and the first metal interconnection.

Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: An electronic package is provided, in which a first electronic module and a second electronic module are stacked via a plurality of first conductive structures and a plurality of second conductive structures, and the amount of solder of the first conductive structures is greater than the amount of solder of the second conductive structures, such that the electronic package can be configured with the first conductive structures and the second conductive structures according to the degree of warpage of the electronic package, so as to effectively disperse the stress to avoid the problem of warpage.

Abstract: An electronic package is provided, in which a first electronic element and a second electronic element stacked on each other are embedded in a cladding layer, a circuit structure electrically connected to the second electronic element is formed on the cladding layer, and a passive element and a package module are disposed on the circuit structure, so as to shorten the transmission distance of electrical signals between the package module and the second electronic element.

Abstract: An electronic package is provided, in which a first electronic module and a second electronic module are stacked via a plurality of first conductive structures and a plurality of second conductive structures, and the amount of solder of the first conductive structures is greater than the amount of solder of the second conductive structures, such that the electronic package can be configured with the first conductive structures and the second conductive structures according to the degree of warpage of the electronic package, so as to effectively disperse the stress to avoid the problem of warpage.

Abstract: An electronic package is provided, in which a stacking component and a plurality of conductive pillars are embedded in a packaging layer, and a routing structure is formed on the packaging layer, where the stacking component is formed by stacking a first electronic module and a second electronic module on each other, and a plurality of first conductive vias and a plurality of second conductive vias are served as the electrical connection paths between the first electronic module and the second electronic module, such that the transmission distance of electrical signals between a first electronic element in the first electronic module and a second electronic element in the second electronic module can be reduced.

Abstract: An air baffle structure is provided for installing a motherboard and inside a case. The case includes an opening. The air baffle structure includes a pair of brackets and an air baffle cover. The pair of brackets are fixed on the case and disposed on two sides of the opening, and the motherboard is pluggably disposed between the pair of brackets. The air baffle cover is connected to tops of the pair of brackets and straddles the pair of brackets. Therefore, the air baffle cover may effectively guide the air to pass through the motherboard to dissipate heat of the motherboard, and the quantity of fans in the case is reduced.