Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: Disclosed are an LED light source, an LED light source manufacturing method, and their direct display device. The LED light source includes a base, at least an LED chip, an anti-vulcanization structure, a light excitation structure, an encapsulation structure and a protection structure. The LED light source can overcome catalyst poison or vulcanization of the light-emitting material effectively to improve product yield and reliability of the LED light source. In the meantime, the LED light source has the feature of a better light emission performance.

Abstract: Disclosed are an LED light source, an LED light source manufacturing method, and their direct display device. The LED light source includes a base, at least an LED chip, an anti-vulcanization structure, a light excitation structure, an encapsulation structure and a protection structure. The LED light source can overcome catalyst poison or vulcanization of the light-emitting material effectively to improve product yield and reliability of the LED light source. In the meantime, the LED light source has the feature of a better light emission performance.

Abstract: Disclosed are an LED light source, an LED light source manufacturing method, and their direct display device. The LED light source includes a base, at least an LED chip, an anti-vulcanization structure, a light excitation structure, an encapsulation structure and a protection structure. The LED light source can overcome catalyst poison or vulcanization of the light-emitting material effectively to improve product yield and reliability of the LED light source. In the meantime, the LED light source has the feature of a better light emission performance.

Abstract: Disclosed are an LED light source, an LED light source manufacturing method, and their direct display device. The LED light source includes a base, at least an LED chip, an anti-vulcanization structure, a light excitation structure, an encapsulation structure and a protection structure. The LED light source can overcome catalyst poison or vulcanization of the light-emitting material effectively to improve product yield and reliability of the LED light source. In the meantime, the LED light source has the feature of a better light emission performance.

Abstract: An LED lighting device is disclosed. The LED lighting device uses a violet LED chip as a light source for exciting quantum dots. The quantum dots excited by the light of the violet LED chip are mixed with each other to form white light. So, the LED lighting device not just has the effects of providing a high luminous efficiency and preventing the blue light from damaging human eyes only, but also provides a better color rendering ability.

Abstract: An LED structure is applied to a backlight source to set a white light of a backlight module at a standard D65 position of the CIE1931 chromaticity coordinates and used together with a display module. A red phosphor for emitting a red light, a yellow phosphor for emitting a yellow light, and a blue light LED chip are provided. The mixing ratio of the red phosphor to the yellow phosphor is controlled within a range of (2.33?1):1, so that the original LED white light falls within a region enclosed by ccy?1.8*ccx?0.12, ccy?1.8*ccx?0.336, ccy?0.33 and ccy?0.15 of the CIE1931 coordinates. Since the red phosphor does not absorb or convert yellow light, the brightness loss of the yellow light that excites the yellow phosphor is minimized. A color filter may be installed to achieve better NTSC effect and luminous efficacy.

Abstract: Disclosed is an LED luminous structure for backlight source with good light emitting efficiency and color light rendering and capable of preventing oxidation or affects overall light quality. The LED luminous structure includes a base, a blue LED chip, a green LED chip, a red phosphor and an encapsulation. The blue and green LED chips are installed on the base, and the red phosphor absorbs is excited by a light emitted from the blue LED chip to produce a red light. The encapsulation is for packaging the aforementioned components. The red phosphor has a particle size of 20-30 ?m, and the encapsulation has a moisture permeability of 10-20 g/m2.24h and an oxygen permeability smaller than 1000 cm3/m2.24h.atm to lower the chance of oxidizing the red phosphor and improve the stability, brightness and color gamut of the LED luminous structure by limiting the range of the particle size.

Abstract: Disclosed is an LED luminous structure for backlight source with good light emitting efficiency and color light rendering and capable of preventing oxidation or affects overall light quality. The LED luminous structure includes a base, a blue LED chip, a green LED chip, a red phosphor and an encapsulation. The blue and green LED chips are installed on the base, and the red phosphor absorbs is excited by a light emitted from the blue LED chip to produce a red light. The encapsulation is for packaging the aforementioned components. The red phosphor has a particle size of 20-30 ?m, and the encapsulation has a moisture permeability of 10-20 g/m2.24h and an oxygen permeability smaller than 1000 cm3/m2.24h.atm to lower the chance of oxidizing the red phosphor and improve the stability, brightness and color gamut of the LED luminous structure by limiting the range of the particle size.

Abstract: An LED structure is applied to a backlight source to set a white light of a backlight module at a standard D65 position of the CIE1931 chromaticity coordinates and used together with a display module. A red phosphor for emitting a red light, a yellow phosphor for emitting a yellow light, and a blue light LED chip are provided. The mixing ratio of the red phosphor to the yellow phosphor is controlled within a range of (2.33?1):1, so that the original LED white light falls within a region enclosed by ccy?1.8*ccx?0.12, ccy?1.8*ccx?0.336, ccy?0.33 and ccy?0.15 of the CIE1931 coordinates. Since the red phosphor does not absorb or convert yellow light, the brightness loss of the yellow light that excites the yellow phosphor is minimized. A color filter may be installed to achieve better NTSC effect and luminous efficacy.