Patents by Inventor Hung LO

Hung LO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device including fin FET and manufacturing method thereof
    Patent number: 10068992
    Abstract: A semiconductor device includes a fin structure for a fin field effect transistor (FET). The fin structure includes a base layer protruding from a substrate, an intermediate layer disposed over the base layer and an upper layer disposed over the intermediate layer. The fin structure further includes a first protective layer and a second protective layer made of a different material than the first protective layer. The intermediate layer includes a first semiconductor layer disposed over the base layer, the first protective layer covers at least side walls of the first semiconductor layer and the second protective layer covers at least side walls of the first protective layer.
    Type: Grant
    Filed: May 9, 2017
    Date of Patent: September 4, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung Lo, Tzu-Hsiang Hsu, Chia-Jung Hsu, Feng-Cheng Yang, Teng-Chun Tsai, Ying-Ho Chen
  • SEMICONDUCTOR DEVICE INCLUDING FIN FET AND MANUFACTURING METHOD THEREOF
    Publication number: 20170243957
    Abstract: A semiconductor device includes a fin structure for a fin field effect transistor (FET). The fin structure includes a base layer protruding from a substrate, an intermediate layer disposed over the base layer and an upper layer disposed over the intermediate layer. The fin structure further includes a first protective layer and a second protective layer made of a different material than the first protective layer. The intermediate layer includes a first semiconductor layer disposed over the base layer, the first protective layer covers at least side walls of the first semiconductor layer and the second protective layer covers at least side walls of the first protective layer.
    Type: Application
    Filed: May 9, 2017
    Publication date: August 24, 2017
    Inventors: Hung LO, Tzu-Hsiang HSU, Chia-Jung HSU, Feng-Cheng YANG, Teng-Chun TSAI, Ying-Ho CHEN
  • Semiconductor device including Fin FET and manufacturing method thereof
    Patent number: 9680017
    Abstract: A semiconductor device includes a fin structure for a fin field effect transistor (FET). The fin structure includes a base layer protruding from a substrate, an intermediate layer disposed over the base layer and an upper layer disposed over the intermediate layer. The fin structure further includes a first protective layer and a second protective layer made of a different material than the first protective layer. The intermediate layer includes a first semiconductor layer disposed over the base layer, the first protective layer covers at least side walls of the first semiconductor layer and the second protective layer covers at least side walls of the first protective layer.
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: June 13, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung Lo, Chia-Jung Hsu, Teng-Chun Tsai, Tzu-Hsiang Hsu, Feng-Cheng Yang, Ying-Ho Chen
  • SEMICONDUCTOR DEVICE INCLUDING FIN FET AND MANUFACTURING METHOD THEREOF
    Publication number: 20170077286
    Abstract: A semiconductor device includes a fin structure for a fin field effect transistor (FET). The fin structure includes a base layer protruding from a substrate, an intermediate layer disposed over the base layer and an upper layer disposed over the intermediate layer. The fin structure further includes a first protective layer and a second protective layer made of a different material than the first protective layer. The intermediate layer includes a first semiconductor layer disposed over the base layer, the first protective layer covers at least side walls of the first semiconductor layer and the second protective layer covers at least side walls of the first protective layer.
    Type: Application
    Filed: September 16, 2015
    Publication date: March 16, 2017
    Inventors: Hung LO, Chia-Jung HSU, Teng-Chun TSAI, Tzu-Hsiang HSU, Feng-Cheng YANG