Abstract: A method for making a dual silicide or germanide semiconductor comprises steps of providing a semiconductor substrate, forming a gate, forming source/drain regions, forming a first silicide, reducing spacers thickness and forming a second silicide. Forming a gate comprises forming an insulating layer over the semiconductor substrate, and forming the gate over the insulating layer. Forming source/drain regions comprises forming lightly doped source/drain regions in the semiconductor substrate adjacent to the insulating layer, forming spacers adjacent to the gate and over part of the lightly doped source/drain regions, and forming heavily doped source/drain regions in the semiconductor substrate. The first silicide is formed on an exposed surface of lightly and heavily doped source/drain regions. The second silicide is formed on an exposed surface of lightly doped source/drain regions. A first germanide and second germanide may replace the first silicide and the second silicide.

Abstract: A semiconductor device comprises a substrate, a metal-semiconductor compound layer and at least one kind of metal dopant. The substrate has a surface. The metal-semiconductor compound layer extends downwards into the substrate from the surface. The metal dopant which is made by one of a group of metal elements with atomic numbers ranging from 57 to 78 or the arbitrary combinations thereof and doped in the metal-semiconductor compound layer and the substrate with at least one peak concentration formed adjacent to the interface of the metal-semiconductor compound layer and the substrate.

Abstract: A method of manufacturing a multilayer printed circuit board of a built-in electronic device provides a substrate having a copper clad laminate and a first dielectric layer. The first dielectric layer is laminated onto the copper clad laminate and has a cavity for accommodating the electronic device. A second dielectric layer is laminated onto the substrate and electronic device to produce a base circuit board with an embedded electronic device. A build-up circuit layer is formed on the base circuit board. The first and second dielectric layers are made of a plastic material.

Abstract: A method for making a dual silicide or germanide semiconductor comprises steps of providing a semiconductor substrate, forming a gate, forming source/drain regions, forming a first silicide, reducing spacers thickness and forming a second silicide. Forming a gate comprises forming an insulating layer over the semiconductor substrate, and forming the gate over the insulating layer. Forming source/drain regions comprises forming lightly doped source/drain regions in the semiconductor substrate adjacent to the insulating layer, forming spacers adjacent to the gate and over part of the lightly doped source/drain regions, and forming heavily doped source/drain regions in the semiconductor substrate. The first silicide is formed on an exposed surface of lightly and heavily doped source/drain regions. The second silicide is formed on an exposed surface of lightly doped source/drain regions. A first germanide and second germanide may replace the first silicide and the second silicide.

Abstract: A method of manufacturing a multilayer printed circuit board of a built-in electronic device provides a substrate having a copper clad laminate and a first dielectric layer. The first dielectric layer is laminated onto the copper clad laminate and has a cavity for accommodating the electronic device. A second dielectric layer is laminated onto the substrate and electronic device to produce a base circuit board with an embedded electronic device. A build-up circuit layer is formed on the base circuit board. The first and second dielectric layers are made of a plastic material.