Abstract: A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.

Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: A power driven component inside a compressor is disposed with a stator and rotors. The stator has an iron core in a circular ring and stator coils in a tightly wound manner. A vertical interval is formed between adjacent stator coils. A cover body is formed on the stator and a shield member that is formed with an upper portion along each stator coil and bending curve portions at two sides of the upper portion. Each bending curve portion is extended toward the interval from the upper portion. A sealed cover portion is connected between the bending curve portions of the upper portion and correspondingly seals each interval to reduce noise of the compressor and oil circulation rate.

Abstract: A power driven component inside a compressor is disposed with a stator and rotors. The stator has an iron core in a circular ring and a plurality of stator coils in concentrated winding manner. An interval vertically passing through is formed between adjacent stator coils. A cover body is formed on the stator and a shield member that is formed with an upper portion along each stator coil and bending curve portions at two sides of the upper portion. Each bending curve portion is extended toward the interval from the upper portion. A sealed cover portion is connected between the bending curve portions of the upper portion and correspondingly seals each interval to reduce noise of the compressor and oil circle rate.

Abstract: A BIOS switching system applicable to a computer system is provided. The BIOS switching system includes an input module and a memory module, and the memory module further includes a plurality of BIOS's, an option recording block, and a boot-up management block. The input module produces a switching signal according to a user input. The boot-up management block determines whether replacing an execution option block's data in the option recording block is necessary or not based on the switching signal. The data of the execution option block is identification data of one of the BIOS's. The boot-up management block executes the BIOS indicated by the data of the execution option block while the computer system boots up.

Abstract: A BIOS switching system applicable to a computer system is provided. The BIOS switching system includes an input module and a memory module, and the memory module further includes a plurality of BIOS's, an option recording block, and a boot-up management block. The input module produces a switching signal according to a user input. The boot-up management block determines whether replacing an execution option block's data in the option recording block is necessary or not based on the switching signal. The data of the execution option block is identification data of one of the BIOS's. The boot-up management block executes the BIOS indicated by the data of the execution option block while the computer system boots up.