Patents by Inventor Hung-Ping D. Yang

Hung-Ping D. Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a submicron T-shaped gate
    Patent number: 5766967
    Abstract: A method for fabricating submicron T-shaped gates for the field-effect transistors disclosed, which can be accomplished by using a tri-layer positive photoresist with a single electron beam exposure and a single development step. Therefore, the cost can be reduced and the yield can be raised for fabricating high speed field-effect transistors.
    Type: Grant
    Filed: October 7, 1996
    Date of Patent: June 16, 1998
    Assignee: Industrial Technology Research Institute
    Inventors: Yeong-Lin Lai, Hung-Ping D. Yang, Chun-Yen Chang, Edward Y. Chang, Kazumitsu Nakamura, Rico Chang