Patents by Inventor Hung Seob Cheong

Hung Seob Cheong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8563997
    Abstract: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a flat top surface and a plurality of concave regions from the flat top surface, a reflector within the concave regions of the first semiconductor layer, and a second semiconductor layer on the first semiconductor layer.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: October 22, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hung Seob Cheong
  • Publication number: 20120305974
    Abstract: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a flat top surface and a plurality of concave regions from the flat top surface, a reflector within the concave regions of the first semiconductor layer, and a second semiconductor layer on the first semiconductor layer.
    Type: Application
    Filed: August 13, 2012
    Publication date: December 6, 2012
    Inventor: Hung Seob CHEONG
  • Patent number: 8263989
    Abstract: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a plurality of concave portions, a reflector in at least one of the concave portions of the first nitride semiconductor layer, and a second nitride semiconductor layer on the first nitride semiconductor layer.
    Type: Grant
    Filed: May 1, 2009
    Date of Patent: September 11, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hung Seob Cheong
  • Patent number: 8106415
    Abstract: Embodiments provide a semiconductor light emitting device which comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a semiconductor layer on the second conductive semiconductor layer, and comprising a plurality of a semiconductor structures apart from each other and microfacets.
    Type: Grant
    Filed: April 21, 2009
    Date of Patent: January 31, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hung Seob Cheong
  • Patent number: 7989826
    Abstract: Embodiments provide a semiconductor light emitting device which comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a plurality of third semiconductor structures spaced apart on the second conductive semiconductor layer.
    Type: Grant
    Filed: February 19, 2009
    Date of Patent: August 2, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hung Seob Cheong
  • Publication number: 20090272993
    Abstract: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a plurality of concave portions, a reflector in at least one of the concave portions of the first nitride semiconductor layer, and a second nitride semiconductor layer on the first nitride semiconductor layer.
    Type: Application
    Filed: May 1, 2009
    Publication date: November 5, 2009
    Inventor: Hung Seob Cheong
  • Publication number: 20090261318
    Abstract: Embodiments provide a semiconductor light emitting device which comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a semiconductor layer on the second conductive semiconductor layer, and comprising a plurality of a semiconductor structures apart from each other and microfacets.
    Type: Application
    Filed: April 21, 2009
    Publication date: October 22, 2009
    Inventor: Hung Seob CHEONG
  • Publication number: 20090206351
    Abstract: Embodiments provide a semiconductor light emitting device which comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a plurality of third semiconductor structures spaced apart on the second conductive semiconductor layer.
    Type: Application
    Filed: February 19, 2009
    Publication date: August 20, 2009
    Inventor: Hung Seob CHEONG