Abstract: A low numerical aperture fiber output diode laser module, which having several independent diode lasers, and collimated and converged the light beam, for the coupling the light to the core optical fiber with a core diameter of 105 um and a numerical aperture of 0.12. Compared with general products with a numerical aperture of 0.22, the light output angle is reduced to 55%, and use a general blue laser diode for verification. Use an optical software for facilitating the design and optimization of the parameters of the optical lens module.

Abstract: A manufacturing method of a semiconductor device includes: providing a semiconductor stack layer, wherein the semiconductor stack layer includes a first type semiconductor layer, a quantum well layer, and a second type semiconductor layer stacked in sequence; growing an aluminum nitride layer on the second type semiconductor layer; and annealing the aluminum nitride layer to achieve quantum well intermixing.

Abstract: A low numerical aperture fiber output diode laser module, which having several independent diode lasers, and collimated and converged the light beam, for the coupling the light to the core optical fiber with a core diameter of 105 um and a numerical aperture of 0.12. Compared with general products with a numerical aperture of 0.22, the light output angle is reduced to 55%, and use a general blue laser diode for verification. Use an optical software for facilitating the design and optimization of the parameters of the optical lens module.

Abstract: An optical device is disclosed. The optical device includes a first packaging unit and a second packaging unit. The first packaging unit includes a first lead frame and a sensor electrically coupled to the first lead frame. The second packaging unit includes an emitting die and a second lead frame. The emitting die has an optical axis and is operable to emit a light. The second lead frame has a first portion disposed within the second packaging unit and a second portion extending into the first packaging unit so that an angle of about 5-85 degrees is formed between the optical axis of the emitting die and the sensing plane of the sensor.

Abstract: A packaging base for semiconductor elements is made of metal powder selected from the group consisting of cupper (Cu), iron (Fe), wolfram (W), molybdenum (Mo), aluminum (Al), indium (In), and gallium (Ga) or from an alloy of combinations thereof. A heat sink is integrally formed by metallurgical injection molding process. A fixing mount and a protection mount are positioned on the heat sink, thereby creating a packaging base structure. The protection mount surrounds the fixing mount for protecting semiconductor elements like laser diode dies. The packaging base structure includes a mounting gap for the purpose of an easy installation of the semiconductor elements. In this way, the reduction of the heat-removal capacity caused by the thermal contact resistance of the conventional configuration can be avoided so that the cooling effect can be enhanced. Meanwhile, the fabrication process is simplified.