Patents by Inventor Hung-Ta Cheng
Hung-Ta Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20220102582Abstract: A semiconductor structure includes a carrier, a bonding structure, a semiconductor stack, a supporting element and a bridge layer. The bonding structure is on the carrier and has an upper surface. The semiconductor stack is on the bonding structure. The supporting element is on the bonding structure and has a side wall. The bridge layer has a first portion directly connected to the supporting element, a second portion connected to the first portion and a third portion connected to the second portion. The second portion and the third portion of the bridge layer are suspended above the upper surface of the bonding structure. The first portion of the bridge layer directly contacts the side wall of the supporting element.Type: ApplicationFiled: December 14, 2021Publication date: March 31, 2022Inventors: Yung-Fu CHANG, Fan-Lei WU, Shih-Chang LEE, Wen-Luh LIAO, Hung-Ta CHENG, Chih-Chaing YANG, Yao-Ru CHANG, Yi HSIAO, Hsiang CHANG
-
Patent number: 11227975Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.Type: GrantFiled: August 23, 2019Date of Patent: January 18, 2022Assignee: Epistar CorporationInventors: Yung-Fu Chang, Fan-Lei Wu, Shih-Chang Lee, Wen-Luh Liao, Hung-Ta Cheng, Chih-Chaing Yang, Yao-Ru Chang, Yi Hsiao, Hsiang Chang
-
Patent number: 11005007Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.Type: GrantFiled: September 12, 2019Date of Patent: May 11, 2021Assignee: EPISTAR CORPORATIONInventors: Wen-Luh Liao, Chih-Chiang Lu, Shih-Chang Lee, Hung-Ta Cheng, Hsin-Chan Chung, Yi-Chieh Lin
-
Patent number: 10741721Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: GrantFiled: April 3, 2019Date of Patent: August 11, 2020Assignee: EPISTAR CorporationInventors: Cheng-Feng Yu, Ching-Yuan Tsai, Yao-Ru Chang, Hsin-Chan Chung, Shih-Chang Lee, Wen-Luh Liao, Cheng-Hsing Chiang, Kuo-Feng Huang, Hsu-Hsuan Teng, Hung-Ta Cheng, Yung-Fu Chang
-
Patent number: 10700240Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.Type: GrantFiled: December 2, 2019Date of Patent: June 30, 2020Assignee: EPISTAR CORPORATIONInventors: Yao-Ru Chang, Wen-Luh Liao, Chun-Yu Lin, Hsin-Chan Chung, Hung-Ta Cheng
-
Patent number: 10693039Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.Type: GrantFiled: May 23, 2017Date of Patent: June 23, 2020Assignee: Epistar CorporationInventors: Wen-Luh Liao, Shao-Ping Lu, Hung-Ta Cheng, Shih-I Chen, Chia-Liang Hsu, Shou-Chin Wei, Ching-Pei Lin, Yu-Ren Peng, Chien-Fu Huang, Wei-Yu Chen, Chun-Hsien Chang
-
Publication number: 20200105975Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.Type: ApplicationFiled: December 2, 2019Publication date: April 2, 2020Inventors: Yao-Ru CHANG, Wen-Luh LIAO, Chun-Yu LIN, Hsin-Chan CHUNG, Hung-Ta CHENG
-
Publication number: 20200075807Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.Type: ApplicationFiled: August 23, 2019Publication date: March 5, 2020Inventors: Yung-Fu CHANG, Fan-Lei WU, Shih-Chang LEE, Wen-Luh LIAO, Hung-Ta CHENG, Chih-Chaing YANG, Yao-Ru CHANG, Yi HSIAO, Hsiang CHANG
-
Patent number: 10529896Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.Type: GrantFiled: September 19, 2018Date of Patent: January 7, 2020Assignee: EPISTAR CORPORATIONInventors: Yao-Ru Chang, Wen-Luh Liao, Chun-Yu Lin, Hsin-Chan Chung, Hung-Ta Cheng
-
Publication number: 20200006595Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.Type: ApplicationFiled: September 12, 2019Publication date: January 2, 2020Inventors: Wen-Luh LIAO, Chih-Chiang LU, Shih-Chang LEE, Hung-Ta CHENG, Hsin-Chan CHUNG, Yi-Chieh LIN
-
Patent number: 10461223Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle ?1, a second curve having a second angle ?2 and a third curve having a third angle ?3, wherein ?3>?2>?1 .Type: GrantFiled: September 12, 2018Date of Patent: October 29, 2019Assignee: Epistar CorporationInventors: Yung-Fu Chang, Hsin-Chan Chung, Hung-Ta Cheng, Wen-Luh Liao, Shih-Chang Lee, Chih-Chiang Lu, Yi-Ming Chen, Yao-Ning Chan, Chun-Fu Tsai
-
Patent number: 10453995Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.Type: GrantFiled: August 25, 2017Date of Patent: October 22, 2019Assignee: EPISTAR CORPORATIONInventors: Wen-Luh Liao, Chih-Chiang Lu, Shih-Chang Lee, Hung-Ta Cheng, Hsin-Chan Chung, Yi-Chieh Lin
-
Publication number: 20190229233Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: ApplicationFiled: April 3, 2019Publication date: July 25, 2019Inventors: Cheng-Feng YU, Ching-Yuan TSAI, Yao-Ru CHANG, Hsin-Chan CHUNG, Shih-Chang LEE, Wen-Luh LIAO, Cheng-Hsing CHIANG, Kuo-Feng HUANG, Hsu-Hsuan TENG, Hung-Ta CHENG, Yung-Fu CHANG
-
Patent number: 10312407Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: GrantFiled: July 20, 2018Date of Patent: June 4, 2019Assignee: EPISTAR CORPORATIONInventors: Cheng-Feng Yu, Ching-Yuan Tsai, Yao-Ru Chang, Hsin-Chan Chung, Shih-Chang Lee, Wen-Luh Liao, Cheng-Hsing Chiang, Kuo-Feng Huang, Hsu-Hsuan Teng, Hung-Ta Cheng, Yung-Fu Chang
-
Publication number: 20190081213Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode.Type: ApplicationFiled: September 12, 2018Publication date: March 14, 2019Inventors: Yung-Fu CHANG, Hsin-Chan CHUNG, Hung-Ta CHENG, Wen-Luh LIAO, Shih-Chang LEE, Chih-Chiang LU, Yi-Ming CHEN, Yao-Ning CHAN, Chun-Fu TSAI
-
Publication number: 20190019920Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.Type: ApplicationFiled: September 19, 2018Publication date: January 17, 2019Inventors: Yao-Ru CHANG, Wen-Luh LIAO, Chun-Yu LIN, Hsin-Chan CHUNG, Hung-Ta CHENG
-
Publication number: 20180351036Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: ApplicationFiled: July 20, 2018Publication date: December 6, 2018Inventors: Cheng-Feng YU, Ching-Yuan TSAI, Yao-Ru CHANG, Hsin-Chan CHUNG, Shih-Chang LEE, Wen-Luh LIAO, Cheng-Hsing CHIANG, Kuo-Feng HUANG, Hsu-Hsuan TENG, Hung-Ta CHENG, Yung-Fu CHANG
-
Patent number: 10109771Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.Type: GrantFiled: July 18, 2017Date of Patent: October 23, 2018Assignee: EPISTAR CORPORATIONInventors: Yao-Ru Chang, Wen-Luh Liao, Chun-Yu Lin, Hsin-Chan Chung, Hung-Ta Cheng
-
Patent number: 10032954Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: GrantFiled: May 10, 2017Date of Patent: July 24, 2018Assignee: EPISTAR CORPORATIONInventors: Cheng-Feng Yu, Ching-Yuan Tsai, Yao-Ru Chang, Hsin-Chan Chung, Shih-Chang Lee, Wen-Luh Liao, Cheng-Hsing Chiang, Kuo-Feng Huang, Hsu-Hsuan Teng, Hung-Ta Cheng, Yung-Fu Chang
-
Patent number: 9847450Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.Type: GrantFiled: October 21, 2014Date of Patent: December 19, 2017Assignee: EPISTAR CORPORATIONInventors: Wen-Luh Liao, Chih-Chiang Lu, Shih-Chang Lee, Hung-Ta Cheng, Hsin-Chan Chung, Yi-Chieh Lin