Abstract: An interconnect structure on a semiconductor die includes: a lower conductive layer; an upper conductive layer disposed above the lower conductive layer; and a VIA disposed between the lower conductive layer and the upper conductive layer. The VIA includes: a primary interconnect structure and a sacrificial stress barrier ring disposed around the primary interconnect structure and separated a distance from the primary interconnect structure. A fabrication method for the interconnect structure includes: forming a dielectric layer over a lower conductive layer; patterning photoresist (PR) layer over the dielectric layer to define a location for a plurality of VIA trenches, wherein the patterning includes patterning the PR layer to provide a center opening for the VIA trenches that is surrounded by a ring opening for the VIA trenches, wherein the center opening and the ring opening are spaced apart.

Abstract: A telephone dialing device includes a data memory unit with a first memory region for storing normal dial numbers and a second memory region containing pre-stored memory dial numbers. A keypad is operated so as to provide a sequence of key inputs. The key inputs are decoded sequentially to determine if a normal or memory dialing activity is to be accomplished. A normal dial number corresponding to the decoded input is stored in the first memory region of the data memory unit, and a first code, which includes a normal dialing command and a first address to indicate the location of the normal dial number corresponding to the decoded input in the first memory region, is generated if the decoded input involves a normal dialing activity. A second code, which includes a memory dialing command and a second address to indicate the location of the memory dial number corresponding to the decoded input in the second memory region, is generated if the decoded input involves a memory dialing activity.