Abstract: The present invention discloses a method and an apparatus for silent current detection. By measuring voltage of a control output of a driver control circuit for driving an application device, leakage current of the driver control circuit can be detected. If the application device has an energy bandgap, short or open states of the device can further be detected. These detections are achieved, no matter whether the application device is driven or not.

Abstract: The present invention discloses a circuit for driving a heater of a printhead and a device employing the same. The device primarily includes a plurality of driving units and a plurality of electric resistant heaters. Each driving unit includes a transistor or at least one pair of transistors to form a Darlington pair, and has a base node connecting to a correspondent receive node for receiving correspondent address signals. Each electric resistant heater defines a first end connecting to the collector node of each driving unit, and a second end connecting to a current source. The driving unit of the present invention is a common emitter, which results in higher power gain. According to the driving circuit and device of the present invention, the power of electric resistant heaters is more controllable, and the stability of outputing current is improved.

Abstract: A III-V semiconductor structure and it producing method is provided. The method for forming a III-V semiconductor structure having a Schottky barrier layer includes the steps of (a) providing a III-V substrate, (b) treating the first barrier layer with a sulfuric acid solution, (c) forming a Schottky barrier layer on the III-V substrate, and (d) forming a metal layer on the second barrier layer. The Ill-V semiconductor structure includes a III-V substrate, a Schottky barrier layer, and a metal layer. The Schottky barrier layer is made of Al2(SO4)3 and In2(SO4)3.

Abstract: Group III-V composites, which is used to manufacture Schottky contacts having the characteristics of higher energy gap, higher carriers mobility, etc., are applied for manufacturing high-speed devices. Therefore, in there years, Group III-V composite Schottky contacts are continuously being developed. In the invention, the surface treatment of composite semiconductor is used for reduce a surface state and oxidation, thereby increased the Schottky barriers of the Group III-V composite (such as, GaAs, fnP, InAs and InSb) Schottky contacts. During experiments. a phosphorus sulphide/ammonia sulphide solution and hydrogen fluoride solution are used for the surface treatment to increase the amount of sulphur contained on the surfaces of substrates, reduce the surface state and remove various oxides. Furthermore. ultra-thin and really stable sulphur fluoride/phosphorus fluoride layers having high energy gaps are formed on various substrates.

Abstract: Group III-V composites, which is used to manufacture Schottky contacts having the characteristics of higher energy gap, higher carriers mobility, etc., are applied for manufacturing high-speed devices. Therefore, in there years, Group III-V composite Schottky contacts are continuously being developed. In the invention, the surface treatment of composite semiconductor is used for reduce a surface state and oxidation, thereby increased the Schottky barriers of the Group III-V composite (such as, GaAs, InP, InAs and InSb) Schottky contacts. During experiments, a phosphorus sulphide/ammonia sulphide solution and hydrogen fluoride solution are used for the surface treatment to increase the amount of sulphur contained on the surfaces of substrates, reduce the surface state and remove various oxides. Furthermore, ultra-thin and really stable sulphur fluoride/phosphorus fluoride layers having high energy gaps are formed on various substrates.