Abstract: A driving device comprises a first complementary metal-oxygen-semiconductor circuit and a first comparator. The first complementary metal-oxygen-semiconductor circuit is configured for outputting a power signal or a pull-down signal according to the first input signal. The first comparator comprises a first non-inverting input terminal and a first inverting input terminal. The first non-inverting input terminal is coupled to the first complementary metal-oxygen-semiconductor circuit, and is configured to receive the power signal or the pull-down signal. The first inverting input terminal is configured for receiving a first reference signal, and the first comparator is configured to compare one of the power signal and the pull-down signal and the first reference signal to provide a first driving signal.

Abstract: In an example method, a mobile device obtains a signal indicating an acceleration measured by a sensor over a time period. The mobile device determines an impact experienced by the user based on the signal. The mobile device also determines, based on the signal, one or more first motion characteristics of the user during a time prior to the impact, and one or more second motion characteristics of the user during a time after the impact. The mobile device determines that the user has fallen based on the impact, the one or more first motion characteristics of the user, and the one or more second motion characteristics of the user, and in response, generates a notification indicating that the user has fallen.

Abstract: A semiconductor device includes a substrate, a bottom electrode, a ferroelectric layer, a noble metal electrode, and a non-noble metal electrode. The bottom electrode is over the substrate. The ferroelectric layer is over the bottom electrode. The noble metal electrode is over the ferroelectric layer. The non-noble metal electrode is over the noble metal electrode.

Abstract: A semiconductor structure includes a substrate with a first surface and a second surface opposite to the first surface, a first and a second shallow trench isolations disposed in the substrate and on the second surface, a deep trench isolation structure in the substrate and coupled to the first shallow trench isolation, a first dielectric layer disposed on the first surface and coupled to the deep trench isolation structure, a second dielectric layer disposed over the first dielectric layer and coupled to the deep trench isolation structure, a third dielectric layer comprising a horizontal portion disposed over the second dielectric layer and a vertical portion coupled to the horizontal portion, and a through substrate via structure penetrating the substrate from the first surface to the second surface and penetrating the second shallow trench isolation.

Abstract: A semiconductor device includes a random access memory (RAM) structure and a dielectric layer. The RAM structure is over a substrate and includes a bottom electrode layer, a ferroelectric layer over the bottom electrode layer, and a top electrode layer over the ferroelectric layer. The dielectric layer is over the substrate and laterally surrounds a lower portion of the RAM structure. From a cross-sectional view, the bottom electrode layer of the RAM structure has a lateral portion and a vertical portion, and the vertical portion upwardly extends from the lateral portion to a position higher than a top surface of the dielectric layer.

Abstract: A carbon dioxide purification system for the treatment of a waste gas produced by a generator includes a water removal unit having at least one drying device, and a purification unit having a plurality of pressure swing adsorption devices disposed and connected in series with each other. The at least one drying device is used to reduce water vapor in the waste gas and to form a dry gas mixture having carbon dioxide gas. The pressure swing adsorption devices are used to purify carbon dioxide gas from the dry gas mixture, so as to obtain a gas product containing carbon dioxide gas with a purity of more than 99.5%.

Abstract: A package includes an optical sensor die. The optical sensor die has an optically active surface area (OASA) disposed on a front side of a substrate. A glass cover is disposed above the OASA and attached to the front side the substrate by a dam material. A through-substrate via (TSV) extends from an opening at a back side of the substrate toward a front side of the substrate. The TSV has a stepped bottom surface at the front side of the substrate. The TSV provides access for electrical connections between the back side of the substrate and the front side of the substrate.

Abstract: Disclosed is a light-emitting diode display module, including a first light-emitting diode, a second light-emitting diode, a third light-emitting diode, a scan block, a voltage conversion block, a first sink block, and a second sink block. An operating voltage of the first light-emitting diode is lower than that of the second and third light-emitting diodes. The voltage conversion block provides an auxiliary power supply voltage based on a high power supply voltage and a low power supply voltage. The first light-emitting diode is coupled between the scan block and the first sink block receiving the high power supply voltage and the auxiliary power supply voltage. The second light-emitting diode and the third light-emitting diode are coupled between the scan block and the second sink block receiving the high power supply voltage and the low power supply voltage.

Abstract: Disclosed is a light-emitting diode display module, including a first light-emitting diode, a second light-emitting diode, a third light-emitting diode, a scan block, a voltage conversion block, a first sink block, and a second sink block. An operating voltage of the first light-emitting diode is lower than that of the second and third light-emitting diodes. The voltage conversion block provides an auxiliary power supply voltage based on a high power supply voltage and a low power supply voltage. The first light-emitting diode is coupled between the scan block and the first sink block receiving the high power supply voltage and the auxiliary power supply voltage. The second light-emitting diode and the third light-emitting diode are coupled between the scan block and the second sink block receiving the high power supply voltage and the low power supply voltage.

Abstract: The present disclosure provides a display device, including first to fourth LEDs, a line structure, and first to fourth lines. The second LED is arranged in a first direction corresponding to the first LED. The fourth LED is arranged in a second direction corresponding to the third LED. The line structure includes first to third line segments. The first line is coupled to the first LED. The second line is coupled to the second LED. The third line is coupled to the third LED. The fourth line is coupled to the fourth LED. A portion of the first line and a portion of the second line are in parallel with the first line segment, a portion of the third line is in parallel with the second line segment, and a portion of the fourth line is in parallel with the third line segment.

Abstract: The subject disclosure relates to a clothing washing system, an apparatus for generating nano microbubble ionic water, and a method of washing clothes. The clothing washing system includes an adjustment unit, an electrolysis unit, a first fluid circulation unit, a nano microbubble generation unit, a second fluid circulation unit, and a cleaning unit. The electrolysis unit is in fluid communication with the adjustment unit. The first fluid circulation unit is connected to the adjustment unit and the electrolysis unit. The nano microbubble generation unit is in fluid communication with the adjustment unit. The second fluid circulation unit is connected to the adjustment unit and the nano microbubble generation unit. The cleaning unit is in fluid communication with the adjustment unit.

Abstract: A driving device comprises a first complementary metal-oxygen-semiconductor circuit and a first comparator. The first complementary metal-oxygen-semiconductor circuit is configured for outputting a power signal or a pull-down signal according to the first input signal. The first comparator comprises a first non-inverting input terminal and a first inverting input terminal. The first non-inverting input terminal is coupled to the first complementary metal-oxygen-semiconductor circuit, and is configured to receive the power signal or the pull-down signal. The first inverting input terminal is configured for receiving a first reference signal, and the first comparator is configured to compare one of the power signal and the pull-down signal and the first reference signal to provide a first driving signal.

Abstract: The present disclosure provides a driving circuit, including a transistor and a level shifter. The first terminal of the transistor is electrically connected to a light emitting diode and is configured to receive a supply voltage. The second terminal of the transistor is configured to receive a first reference voltage. The level shifter is configured to receive an input signal from a previous-stage driving circuit and adjust the voltage level of the input signal according to a voltage operating range formed by the supply voltage and the first reference voltage to generate a level-shifted signal corresponding to the voltage operating range and configured to control the transistor. The input signal varies between a second reference voltage and the supply voltage. The second reference voltage and the first reference voltage are different from each other and both lower than the supply voltage.

Abstract: The present invention discloses that a multi-laser cutting method and system, which is applied to a substrate to form a primary substrate having a pattern of rounded corners and a line, the throughput could be improved because CO2 laser cannot cut the round corner at the high speed, but the substrate strength could be kept due to the high cutting quality of the lines by CO2 laser. The poor quality of the cutting edges of the round corners will not affect on the substrate strength but the round corner cutting by the second laser unit will speed up the cutting process. The present invention applies the method by the 2 different laser machines to balance the throughput. Because at the same speed, for example 150 mm/sec, the cycle time per 1 substrate will be different due to the different length of the cutting lines.

Abstract: The present disclosure relates to a stringed instrument resonance analysis device which uses a scientific detection method to evaluate the resonance effect of stringed instrument, wherein the stringed instrument resonance analysis device has a cabinet, a holder, a resonant sounder, a sonic generator, at least one sonic collector and a spectrum analyzer. The cabinet forms an accommodating space therein. The holder a holder is disposed in the accommodating space and used to fix and hold the stringed instrument. The resonant sounder is disposed in the accommodating space and fixed and clamped to a bridge on a loudspeaker box of the stringed instrument. The sonic generator is connected to the resonant sounder. The sonic collector is disposed in the accommodating space and adjacent to the loudspeaker box of the stringed instrument. The spectrum analyzer is connected to the at least one sonic collector.

Abstract: A brittle object cutting apparatus and the method thereof are disclosed. Wherein, the brittle object cutting apparatus comprises a first heating laser unit, a second heating laser unit, a scribing laser unit, two cooling units and a processing module. A heating laser from the heating laser units respectively located on opposite sides of a scribing laser from the scribing laser unit, and a coolant of the cooling unit followed behind the heating laser. In the moving process of the brittle object, the processing module controls the scribing laser for a scribing operation, and controls one of the heating lasers and the coolant form one of the cooling units to heat and cool the brittle object. As a result, the machining time of dicing the brittle objects may be effectively reduced.

Abstract: A method is provided to purify [F-18]FEONM under a high pressure. The synthesis processes of [F-18]FEONM are integrated. An isolation process of non-toxic radio-high performance liquid chromatography (radio-HPLC) is used to purify the crude product. The method integrates a convention [F-18]FDG synthesizer and a novel radio-HPLC system together in a heat chamber. After radiofluorinating the precursor, the reaction product is purified with an alumina solid-phase column in advance to obtain the crude product while fluorine-18 is removed. Then, diphenyl semipreparative HPLC column is used for a final purification. A non-toxic solvent is used for mobile-phase eluting to remove the unreacted precursor and the phase-transfer solvent. The radiofluorination has a reaction yield about 50 percent (%). The method has an uncorrected radiochemical yield of 10˜20%. Both of the radio-HPLC and the radio-thin layer chromatography (radio-TLC) have radiochemical purity higher than 95%.

Abstract: A method is provided to purify [F-18]FEONM under a high pressure. The synthesis processes of [F-18]FEONM are integrated. An isolation process of non-toxic radio-high performance liquid chromatography (radio-HPLC) is used to purify the crude product. The method integrates a convention [F-18]FDG synthesizer and a novel radio-HPLC system together in a heat chamber. After radiofluorinating the precursor, the reaction product is purified with an alumina solid-phase column in advance to obtain the crude product while fluorine-18 is removed. Then, diphenyl semipreparative HPLC column is used for a final purification. A non-toxic solvent is used for mobile-phase eluting to remove the unreacted precursor and the phase-transfer solvent. The radiofluorination has a reaction yield about 50 percent (%). The method has an uncorrected radiochemical yield of 10˜20%. Both of the radio-HPLC and the radio-thin layer chromatography (radio-TLC) have radiochemical purity higher than 95%.

Abstract: Various examples are directed to systems and methods for classifying text. A computing device may access, from a database, an input sample comprising a first set of ordered words. The computing device may generate a first language model feature vector for the input sample using a word level language model and a second language model feature vector for the input sample using a partial word level language model. The computing device may generate a descriptor of the input sample using a target model, the input sample, the first language model feature vector, and the second language model feature vector and write the descriptor of the input sample to the database.

Abstract: Various examples described herein are directed to systems and methods for analyzing text. A computing device may train an autoencoder language model using a plurality of language model training samples. The autoencoder language mode may comprise a first convolutional layer. Also, a first language model training sample of the plurality of language model training samples may comprise a first set of ordered strings comprising a masked string, a first string preceding the masked string in the first set of ordered strings, and a second string after the masked string in the first set of ordered strings. The computing device may generate a first feature vector using an input sample and the autoencoder language model. The computing device may also generate a descriptor of the input sample using a target model, the input sample, and the first feature vector.