Patents by Inventor Hung Wei Lin

Hung Wei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12002699
    Abstract: A wafer pod transfer assembly includes a wafer pod port to receive a wafer pod, a transfer axle coupled to the wafer pod port, a shaft receiver, a shaft coupled to the transfer axle and to the shaft receiver, a pin through the shaft receiver and through the shaft, wherein the pin comprises a first end and a second end, opposite the first end, and a pin buckle including a first loop and a second loop. The pin buckle is coupled to the pin, the first loop encircles the first end of the pin, and the second loop encircles the second end of the pin.
    Type: Grant
    Filed: March 6, 2023
    Date of Patent: June 4, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Chih-Wei Chou, Sheng-Yuan Lin, Yuan-Hsin Chi, Yin-Tun Chou, Hung-Chih Wang, Yu-Chi Liu
  • Patent number: 12002684
    Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.
    Type: Grant
    Filed: November 21, 2022
    Date of Patent: June 4, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Liang-Guang Chen, Kei-Wei Chen, Hung Yen, Ting-Hsun Chang, Chi-Hsiang Shen, Li-Chieh Wu, Chi-Jen Liu
  • Publication number: 20240178102
    Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.
    Type: Application
    Filed: April 21, 2023
    Publication date: May 30, 2024
    Inventors: Chun-Ti LU, Hao-Yi TSAI, Chiahung LIU, Ken-Yu CHANG, Tzuan-Horng LIU, Chih-Hao CHANG, Bo-Jiun LIN, Shih-Wei CHEN, Pei-Rong NI, Hsin-Wei HUANG, Zheng GangTsai, Tai-You LIU, Steve SHIH, Yu-Ting HUANG, Steven SONG, Yu-Ching WANG, Tsung-Yuan YU, Hung-Yi KUO, CHung-Shi LIU, Tsung-Hsien CHIANG, Ming Hung TSENG, Yen-Liang LIN, Tzu-Sung HUANG, Chun-Chih CHUANG
  • Patent number: 11990845
    Abstract: A secondary controller applied to a secondary side of a power converter includes a control signal generation circuit and a gate control signal generation circuit. The gate control signal generation circuit generates a gate control signal, and generates an injection signal according to the gate control signal. When a superposition voltage is less than a reference voltage, the control signal generation circuit generates a gate pulse control signal, wherein the gate pulse control signal corresponds to an output voltage of the power converter and the injection signal, the gate control signal generation circuit is further used for generating a gate pulse signal according to the gate pulse control signal, and the gate pulse signal is used for making a primary side of the power converter turned on.
    Type: Grant
    Filed: May 31, 2022
    Date of Patent: May 21, 2024
    Assignee: Leadtrend Technology Corp.
    Inventors: Chung-Wei Lin, Hung-Ching Lee, Hong-Wei Lin, Tsung-Chien Wu
  • Publication number: 20240164114
    Abstract: A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.
    Type: Application
    Filed: November 29, 2023
    Publication date: May 16, 2024
    Applicant: Micron Technology, Inc.
    Inventors: Hung-Wei Liu, Vassil N. Antonov, Ashonita A. Chavan, Darwin Franseda Fan, Jeffery B. Hull, Anish A. Khandekar, Masihhur R. Laskar, Albert Liao, Xue-Feng Lin, Manuj Nahar, Irina V. Vasilyeva
  • Publication number: 20240164043
    Abstract: A swivel bracket assembly and a method for installing an electrical component to a riser bracket assembly are disclosed. The swivel bracket assembly includes a baseplate; a swivel bracket rotatably attached to the baseplate, the swivel bracket being rotatable between an open position and a closed position; and pads attached to the swivel bracket, at least one of the pads being configured to contact and support the electrical component attached to the riser bracket assembly when the swivel bracket is in the closed position. A method for installing an electrical component to a riser bracket assembly includes receiving the electrical component into a slot of a riser circuit board and pivoting a swivel bracket rotatable coupled to a baseplate from an open position to a closed position to support the electrical component secured to the riser bracket assembly.
    Type: Application
    Filed: November 14, 2022
    Publication date: May 16, 2024
    Inventors: Yaw-Tzorng TSORNG, Ming-Lung WANG, Hung-Wei CHEN, Liang-Ju LIN
  • Publication number: 20240159269
    Abstract: A rotary bearing assembly is disclosed and includes an input shaft, an inner-ring component, an outer-ring component and a load element. The input shaft is configured to combine a rotating shaft of a motor to provide a power input. The inner-ring component includes a gear set, wherein the inner-ring component is sleeved on the input shaft through the gear set and driven by the input shaft. The outer-ring component is sleeved on the inner-ring component through a load element and engaged with the gear set, wherein when the gear set is driven by the input shaft to drive the inner-ring component, the gear set drives the outer-ring component, and the inner-ring component and the outer-ring component are rotated relatively, wherein one of the inner-ring component and the outer-ring component is served to provide a power output, and a rotational speed difference is between the power input and the power output.
    Type: Application
    Filed: August 8, 2023
    Publication date: May 16, 2024
    Inventors: Chi-Wen Chung, Hung-Wei Lin, Hsien-Lung Tsai, Wei-Ying Chu, Chin-Hsiang Chen
  • Patent number: 11977423
    Abstract: Methods and systems for thermal management of hardware resources that may be used to provide computer implemented services are disclosed. The disclosed thermal management method and systems may improve the likelihood of data processing systems providing desired computer implemented services by improving the thermal management of the hardware resources without impairment of storage devices. To improve the likelihood of the computer implemented services being provided, the systems may proactively identify whether storage devices subject to impairment due to dynamic motion are present. If such storage devices are present, then the system may automatically take action to reduce the likelihood of the storage devices being subject to dynamic motion sufficient to impair their operation.
    Type: Grant
    Filed: December 20, 2021
    Date of Patent: May 7, 2024
    Assignee: Dell Products L.P.
    Inventors: Hung-Pin Chien, Jyh-Yinn Lin, Yu-Wei Chi Liao, Chien Yen Hsu, Ming-Hui Pan
  • Publication number: 20240136440
    Abstract: A thin film transistor and method of making the same, the thin film transistor including: a substrate; a word line disposed on the substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region disposed between the source and drain regions and overlapping with the word line in a vertical direction perpendicular to a plane of the substrate; a hydrogen diffusion barrier layer overlapping with the channel region in the vertical direction; a gate dielectric layer disposed between the channel region and the word line; and source and drain electrodes respectively electrically coupled to the source and drain regions.
    Type: Application
    Filed: December 30, 2023
    Publication date: April 25, 2024
    Inventors: Hung-Wei Li, Yu-Ming Lin, Mauricio Manfrini, Sai-Hooi Yeong
  • Patent number: 11966546
    Abstract: A display device includes a base layer, a touch sensing layer, a light guide module and a display panel. The touch sensing layer is disposed on the base layer. The light guide module is disposed on the touch sensing layer. The touch sensing layer is located between the light guide module and the display panel, and the touch sensing layer and one of the light guide module and the display panel have no adhesive material therebetween.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: April 23, 2024
    Assignee: E Ink Holdings Inc.
    Inventors: Chen-Cheng Lin, Chia-I Liu, Kun-Hsien Lee, Hung-Wei Tseng
  • Publication number: 20240127754
    Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.
    Type: Application
    Filed: December 7, 2023
    Publication date: April 18, 2024
    Inventors: Chin-Wei Lin, Hung Sheng Lin, Shih Chang Chang, Shinya Ono
  • Patent number: 11963295
    Abstract: Provided are a circuit apparatus, a manufacturing method thereof, and a circuit system. The circuit apparatus includes a flexible circuit board, a flexible packaging material layer and an electronic device. The flexible circuit board has at least one hollow pattern, wherein the flexible circuit board has an inner region and a peripheral region surrounding the inner region, and has a first surface and a second surface opposite to each other. The flexible packaging material layer is disposed in the at least one hollow pattern. The electronic device is disposed on the first surface of the flexible circuit board and electrically connected with the flexible circuit board.
    Type: Grant
    Filed: January 27, 2022
    Date of Patent: April 16, 2024
    Assignee: Industrial Technology Research Institute
    Inventors: Hung-Hsien Ko, Yi-Cheng Lu, Heng-Yin Chen, Hao-Wei Yu, Te-Hsun Lin
  • Patent number: 11953523
    Abstract: An analog front-end (AFE) circuit, configured to be coupled to a sensor having a plurality of sensing units, includes a plurality of sensing circuits and a plurality of multiplexers. Each of the plurality of multiplexers is coupled between one of the plurality of sensing units and at least two of the plurality of sensing circuits.
    Type: Grant
    Filed: November 30, 2021
    Date of Patent: April 9, 2024
    Assignee: NOVATEK Microelectronics Corp.
    Inventors: Tzu-Wei Lin, Hung-Kai Chen, Feng-Lin Chan
  • Patent number: 11955298
    Abstract: A button module is provided. The button module comprises a base, a pressing part, and an elastic part. The pressing part includes a fixed end and a free end. The fixed end is pivotally connected to the base in a first axial direction. The elastic part is disposed on a side of the pressing part facing the base. The elastic part includes a first damping portion and a second damping portion selectively pressing against the base, where a hardness of the first damping portion is different from a hardness of the second damping portion.
    Type: Grant
    Filed: August 30, 2022
    Date of Patent: April 9, 2024
    Assignee: ASUSTEK COMPUTER INC.
    Inventors: Te-Wei Huang, Zih-Siang Huang, Jhih-Wei Rao, Hung-Chieh Wu, Liang-Jen Lin
  • Publication number: 20240107777
    Abstract: An SOT MRAM structure includes a word line. A second source/drain doping region and a fourth source/drain doping region are disposed at the same side of the word line. A first conductive line contacts the second source/drain doping region. A second conductive line contacts the fourth source/drain doping region. The second conductive line includes a third metal pad. A memory element contacts an end of the first conductive line. A second SOT element covers and contacts a top surface of the memory element. The third metal pad covers and contacts part of the top surface of the second SOT element.
    Type: Application
    Filed: October 13, 2022
    Publication date: March 28, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Wei Kuo, Hung-Chan Lin, Chung-Yi Chiu
  • Publication number: 20240096781
    Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.
    Type: Application
    Filed: March 20, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Ti Lu, Hao-Yi Tsai, Chia-Hung Liu, Yu-Hsiang Hu, Hsiu-Jen Lin, Tzuan-Horng Liu, Chih-Hao Chang, Bo-Jiun Lin, Shih-Wei Chen, Hung-Chun Cho, Pei-Rong Ni, Hsin-Wei Huang, Zheng-Gang Tsai, Tai-You Liu, Po-Chang Shih, Yu-Ting Huang
  • Patent number: 11935841
    Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a device package and a shielding layer. The device package includes an electronic device unit and has a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface to the second surface. The shielding layer is disposed on the first surface and the second surface of the device package. A common edge of the second surface and the third surface includes a first portion exposed from the shielding layer by a first length, and a common edge of the first surface and the third surface includes a second portion exposed from the shielding layer by a second length that is different from the first length.
    Type: Grant
    Filed: November 18, 2022
    Date of Patent: March 19, 2024
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Cheng-Yuan Kung, Hung-Yi Lin, Meng-Wei Hsieh, Yu-Pin Tsai
  • Publication number: 20240088246
    Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.
    Type: Application
    Filed: November 16, 2023
    Publication date: March 14, 2024
    Inventors: Yu-Ling Hsu, Ping-Cheng Li, Hung-Ling Shih, Po-Wei Liu, Wen-Tuo Huang, Yong-Shiuan Tsair, Chia-Sheng Lin, Shih Kuang Yang
  • Publication number: 20240088291
    Abstract: A transistor includes an insulating layer, a source region, a drain region, a channel layer, a ferroelectric layer, and a gate electrode. The source region and the drain region are respectively disposed on and in physical contact with two opposite sidewalls of the insulating layer. A thickness of the source region, a thickness of the drain region, and a thickness of the insulating layer are substantially the same. The channel layer is disposed on the insulating layer, the source region, and the drain region. The ferroelectric layer is disposed over the channel layer. The gate electrode is disposed on the ferroelectric layer.
    Type: Application
    Filed: November 15, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Chang Sun, Sheng-Chih Lai, Yu-Wei Jiang, Kuo-Chang Chiang, TsuChing Yang, Feng-Cheng Yang, Chung-Te Lin
  • Publication number: 20240084445
    Abstract: A leak check is performed on a semiconductor wafer processing tool that includes a process chamber and process gas lines, and a semiconductor wafer is processed using the semiconductor wafer processing tool if the leak check passes. Each gas line includes a mass flow controller (MFC) and normally closed valves including an upstream and downstream valves upstream and downstream of the MFC. Leak checking includes: leak checking up to the downstream valves of the gas lines with the upstream valves closed and the downstream valves of the gas lines closed; and leak checking up to the upstream valve of each the process gas line with the upstream valves of the of the process gas lines closed and with the downstream valve of the of the process gas line being leak checked open and the downstream valve of every other process gas line closed.
    Type: Application
    Filed: January 4, 2023
    Publication date: March 14, 2024
    Inventors: Chih-Wei Chou, Yuan-Hsin Chi, Chih-Hao Yang, Hung-Chih Wang, Yu-Chi Liu, Sheng-Yuan Lin