Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a device package and a shielding layer. The device package includes an electronic device unit and has a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface to the second surface. The shielding layer is disposed on the first surface and the second surface of the device package. A common edge of the second surface and the third surface includes a first portion exposed from the shielding layer by a first length, and a common edge of the first surface and the third surface includes a second portion exposed from the shielding layer by a second length that is different from the first length.

Abstract: A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A semiconductor device includes a semiconductor die and a conductive structure disposed side-by-side and spaced apart from each other through an insulating encapsulant. The conductive structure includes a first conductor laterally covered by the insulating encapsulant, and a second conductor disposed over and separating from the first conductor. The second conductor includes a first portion laterally covered by the insulating encapsulant and a second portion protruded from the insulating encapsulant, where a ratio of a first standoff height of the first portion and a second standoff height of the second portion ranges from about 0.4 to about 1.5.

Abstract: An electronic device and a manufacturing method thereof are provided. The method includes at least the following steps. An insulating encapsulant is formed to encapsulate a multi-layered structure and a semiconductor die, where the multi-layered structure includes a first conductor, a diffusion barrier layer on the first conductor, and a metallic layer on the diffusion barrier layer, and the insulating encapsulant at least exposes a portion of the semiconductor die and a portion of the first conductor. A redistribution structure is formed over the insulating encapsulant, the semiconductor die, and the first conductor. The metallic layer is removed to form a recess in the insulating encapsulant. A second conductor is formed in the recess over the diffusion barrier layer, where the first conductor, the diffusion barrier layer, and the second conductor form a conductive structure that is electrically coupled to the semiconductor die through the redistribution structure.

Abstract: An electronic device and a manufacturing method thereof are provided. The method includes at least the following steps. An insulating encapsulant is formed to encapsulate a multi-layered structure and a semiconductor die, where the multi-layered structure includes a first conductor, a diffusion barrier layer on the first conductor, and a metallic layer on the diffusion barrier layer, and the insulating encapsulant at least exposes a portion of the semiconductor die and a portion of the first conductor. A redistribution structure is formed over the insulating encapsulant, the semiconductor die, and the first conductor. The metallic layer is removed to form a recess in the insulating encapsulant. A second conductor is formed in the recess over the diffusion barrier layer, where the first conductor, the diffusion barrier layer, and the second conductor form a conductive structure that is electrically coupled to the semiconductor die through the redistribution structure.

Abstract: An electronic device and the manufacturing method thereof are provided. The electronic device includes a semiconductor die, a conductive structure electrically coupled to the semiconductor die, an insulating encapsulant encapsulating the semiconductor die and the conductive structure, and a redistribution structure disposed on the insulating encapsulant and the semiconductor die. The conductive structure includes a first conductor, a second conductor, and a diffusion barrier layer between the first conductor and the second conductor. The redistribution structure is electrically connected to the semiconductor die and the first conductor of the conductive structure.

Abstract: An electronic device and the manufacturing method thereof are provided. The electronic device includes a semiconductor die, a conductive structure electrically coupled to the semiconductor die, an insulating encapsulant encapsulating the semiconductor die and the conductive structure, and a redistribution structure disposed on the insulating encapsulant and the semiconductor die. The conductive structure includes a first conductor, a second conductor, and a diffusion barrier layer between the first conductor and the second conductor. The redistribution structure is electrically connected to the semiconductor die and the first conductor of the conductive structure.

Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes a first chip, a redistribution layer structure, a plurality of connection pads, a plurality of dummy patterns, a plurality of micro-bumps, a second chip and an underfill layer. The redistribution layer structure is electrically connected to the first chip. The connection pads are electrically connected to the redistribution layer structure. The dummy patterns are at one side of the connection pads. The micro-bumps are electrically connected to the connection pads. The second chip is electrically connected to the micro-bumps. The underfill layer covers the plurality of dummy patterns and surrounds the micro-bumps.

Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes a first chip, a redistribution layer structure, a plurality of connection pads, a plurality of dummy patterns, a plurality of micro-bumps, a second chip and an underfill layer. The redistribution layer structure is electrically connected to the first chip. The connection pads are electrically connected to the redistribution layer structure. The dummy patterns are at one side of the connection pads. The micro-bumps are electrically connected to the connection pads. The second chip is electrically connected to the micro-bumps. The underfill layer covers the plurality of dummy patterns and surrounds the micro-bumps.

Abstract: The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk.

Abstract: The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk.

Abstract: An image conversion method for naked-eye 3D display includes: an image receiving step to receive a 2D image data having a depth information; a sub-pixel arrangement receiving step to receive a sub-pixel arrangement data which is corresponding to a 3D display apparatus and includes a plurality of views; a view ascertaining step to ascertain the view corresponding to at least a sub-pixel of a plurality of sub-pixels by the sub-pixel arrangement data; and a sub-pixel data searching step to search a sub-pixel data of the sub-pixel at the ascertained view from the 2D image data by the depth information. Thereby, the sub-pixel data of these sub-pixels constitute a 3D image data for displaying.