Abstract: A method includes: depositing a mask layer over a substrate; directing radiation reflected from a collector of a lithography system toward the mask layer according to a pattern; blocking a portion of the radiation by a blocking structure, the blocking structure being attached to a reflector of the lithography system; forming openings in the mask layer by removing regions of the mask layer exposed to the radiation; and removing material of a layer underlying the mask layer exposed by the openings.

Abstract: A layout modification method for fabricating a semiconductor device is provided. The layout modification method includes calculating uniformity of critical dimensions of first and second portions in a patterned layer by using a layout for an exposure manufacturing process to produce the semiconductor device. A width of the first and second portions equals a penumbra size of the exposure manufacturing process. The penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. The layout modification method further includes compensating non-uniformity of the first and second portions of the patterned layer according to the uniformity of critical dimensions to generate a modified layout. The first portion is divided into a plurality of first sub-portions. The second portion is divided into a plurality of second sub-portions. Each second sub-portion is surrounded by two of the first sub-portions.

Abstract: A method for collecting information in image-error compensation is provided. The method includes providing a reticle having a first image structure and a second image structure; moving a light shading member to control a first exposure field; projecting a light over the first exposure field; recording an image of the first image structure after the light is projected; moving the light shading member to control a second exposure field; projecting the light over the second exposure field; and recording an image of the second image structure after the light is projected.

Abstract: A layout modification method for fabricating a semiconductor device is provided. The layout modification method includes calculating uniformity of critical dimensions of first and second portions in a patterned layer by using a layout for an exposure manufacturing process to produce the semiconductor device. A width of the first and second portions equals a penumbra size of the exposure manufacturing process. The penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. The layout modification method further includes compensating non-uniformity of the first and second portions of the patterned layer according to the uniformity of critical dimensions to generate a modified layout. The first portion is divided into a plurality of first sub-portions. The second portion is divided into a plurality of second sub-portions. Each second sub-portion is surrounded by two of the first sub-portions.

Abstract: A layout modification method for fabricating a semiconductor device is provided. Uniformity of critical dimensions of a first portion and a second portion in a patterned layer are calculated by using a layout for an exposure manufacturing process to produce the semiconductor device. A width of the second portion equals a penumbra size of the exposure manufacturing process, and the penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. Non-uniformity between the first and second portions of the patterned layer is compensated according to the uniformity of critical dimensions to generate a modified layout. The patterned layer includes a plurality of absorbers, and a first width of the absorbers is the first portion is less than a second width of the absorbers in the second portion the second portion.

Abstract: A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.

Abstract: A method for collecting information in image-error compensation is provided. The method includes providing a reticle having a first image structure and a second image structure; moving a light shading member to control a first exposure field; projecting a light over the first exposure field; recording an image of the first image structure after the light is projected; moving the light shading member to control a second exposure field; projecting the light over the second exposure field; and recording an image of the second image structure after the light is projected.

Abstract: A layout modification method for fabricating a semiconductor device is provided. Uniformity of critical dimensions of a first portion and a second portion in a patterned layer are calculated by using a layout for an exposure manufacturing process to produce the semiconductor device. A width of the second portion equals a penumbra size of the exposure manufacturing process, and the penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. Non-uniformity between the first and second portions of the patterned layer is compensated according to the uniformity of critical dimensions to generate a modified layout. The patterned layer includes a plurality of absorbers, and a first width of the absorbers is the first portion is less than a second width of the absorbers in the second portion the second portion.

Abstract: A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.

Abstract: A layout modification method for fabricating a semiconductor device is provided. Uniformity of critical dimensions of a first portion and a second portion in a patterned layer is calculated by using a layout for an exposure manufacturing process to produce the semiconductor device. The second portion is adjacent to the first portion, and a width of the second portion equals a penumbra size of the exposure manufacturing process. The penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. Non-uniformity between the first and second portions of the patterned layer is compensated according to the uniformity of critical dimensions to generate a modified layout.

Abstract: A reticle used for collecting information for image-error compensation is provided. The reticle includes a first black border structure and a second black border structure formed over a substrate. The first and second black borders are concentric with a center of the substrate. The reticle further includes a first image structure and a second image structure formed over the substrate. The first and second image structures each has patterns representing features to be patterned on a semiconductor wafer. In a direction away from the center of the substrate, the second image structure, the second black border structure, the first image structure and the first black border structure are arranged in order.

Abstract: A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.

Abstract: A layout modification method for fabricating a semiconductor device is provided. Uniformity of critical dimensions of a first portion and a second portion in a patterned layer is calculated by using a layout for an exposure manufacturing process to produce the semiconductor device. The second portion is adjacent to the first portion, and a width of the second portion equals a penumbra size of the exposure manufacturing process. The penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. Non-uniformity between the first and second portions of the patterned layer is compensated according to the uniformity of critical dimensions to generate a modified layout.

Abstract: A layout modification method for fabricating an integrated circuit is provided. The layout modification method includes calculating uniformity of critical dimension of a patterned layer with a layout for an exposure manufacturing process to produce a semiconductor device. The patterned layer is divided into a first portion and a second portion which is adjacent to the first portion, and a width of the second portion equals to a penumbra size of the exposure manufacturing process. The layout modification method further includes retrieving an adjusting parameter for modifying the layout of the semiconductor device; determining a compensation amount based on the adjusting parameter and the uniformity of critical dimension; and compensating the critical dimension of the second portion of the patterned layer by utilizing the compensation amount to generate a modified layout.

Abstract: A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.

Abstract: A reticle used for collecting information for image-error compensation is provided. The reticle includes a first black border structure and a second black border structure formed over a substrate. The first and second black borders are concentric with a center of the substrate. The reticle further includes a first image structure and a second image structure formed over the substrate. The first and second image structures each has patterns representing features to be patterned on a semiconductor wafer. In a direction away from the center of the substrate, the second image structure, the second black border structure, the first image structure and the first black border structure are arranged in order.

Abstract: A layout modification method for fabricating an integrated circuit is provided. The layout modification method includes calculating uniformity of critical dimension of a patterned layer with a layout for an exposure manufacturing process to produce a semiconductor device. The patterned layer is divided into a first portion and a second portion which is adjacent to the first portion, and a width of the second portion equals to a penumbra size of the exposure manufacturing process. The layout modification method further includes retrieving an adjusting parameter for modifying the layout of the semiconductor device; determining a compensation amount based on the adjusting parameter and the uniformity of critical dimension; and compensating the critical dimension of the second portion of the patterned layer by utilizing the compensation amount to generate a modified layout.

Abstract: A method includes receiving an integrated circuit (IC) layout having a pattern layer. The pattern layer includes a main layout pattern. A dimension W1 of the main layout pattern along a first direction is greater than a wafer metrology tool's critical dimension (CD) measurement upper limit. The method further includes adding a plurality of assistant layout patterns into the pattern layer. The plurality of assistant layout patterns includes a pair of CD assistant layout patterns on both sides of the main layout pattern along the first direction. The pair of CD assistant layout patterns have a substantially same dimension W2 along the first direction and are about equally distanced from the main layout pattern by a dimension D1. The dimensions W2 and D1 are greater than a printing resolution in a photolithography process and are equal to or less than the wafer metrology tool's CD measurement upper limit.

Abstract: A method includes receiving an integrated circuit (IC) layout having a pattern layer. The pattern layer includes a main layout pattern. A dimension W1 of the main layout pattern along a first direction is greater than a wafer metrology tool's critical dimension (CD) measurement upper limit. The method further includes adding a plurality of assistant layout patterns into the pattern layer. The plurality of assistant layout patterns includes a pair of CD assistant layout patterns on both sides of the main layout pattern along the first direction. The pair of CD assistant layout patterns have a substantially same dimension W2 along the first direction and are about equally distanced from the main layout pattern by a dimension D1. The dimensions W2 and D1 are greater than a printing resolution in a photolithography process and are equal to or less than the wafer metrology tool's CD measurement upper limit.