Patents by Inventor Hung-Wen Lee

Hung-Wen Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190304792
    Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a conductive plug over a substrate; a conductive feature over the conductive plug, wherein the conductive feature has a first sidewall, a second sidewall facing the first sidewall, and a bottom surface; and a carbon-containing barrier layer having a first portion along the first sidewall of the conductive feature, a second portion along the second sidewall of the conductive feature, and a third portion along the bottom surface of the conductive feature.
    Type: Application
    Filed: June 3, 2019
    Publication date: October 3, 2019
    Inventors: Rueijer Lin, Ya-Lien Lee, Chun-Chieh Lin, Hung-Wen Su
  • Publication number: 20190278056
    Abstract: An optical image capturing system includes, along the optical axis in order from an object side to an image side, a first lens, a second lens, a third lens, a fourth lens, and a fifth lens. At least one lens among the first to the fifth lenses has positive refractive power. The fifth lens can have negative refractive power, wherein both surfaces thereof are aspheric, and at least one surface thereof has an inflection point. The lenses in the optical image capturing system which have refractive power include the first to the fifth lenses. The optical image capturing system can increase aperture value and improve the imaging quality for use in compact cameras.
    Type: Application
    Filed: July 16, 2018
    Publication date: September 12, 2019
    Inventors: YEONG-MING CHANG, HUNG-WEN LEE, CHIEN-HSUN LAI, YAO-WEI LIU
  • Publication number: 20190278054
    Abstract: An optical image capturing system includes, along the optical axis in order from an object side to an image side, a first lens, a second lens, a third lens, a fourth lens, and a fifth lens. At least one lens among the first to the fifth lenses has positive refractive power. The fifth lens can have negative refractive power, wherein both surfaces thereof are aspheric, and at least one surface thereof has an inflection point. The lenses in the optical image capturing system which have refractive power include the first to the fifth lenses. The optical image capturing system can increase aperture value and improve the imaging quality for use in compact cameras.
    Type: Application
    Filed: July 16, 2018
    Publication date: September 12, 2019
    Inventors: YEONG-MING CHANG, HUNG-WEN LEE, CHIEN-HSUN LAI, YAO-WEI LIU
  • Publication number: 20190273055
    Abstract: A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.
    Type: Application
    Filed: May 20, 2019
    Publication date: September 5, 2019
    Inventors: Chen-Hua Yu, Ming-Che Ho, Hung-Jui Kuo, Yi-Wen Wu, Tzung-Hui Lee
  • Publication number: 20190273147
    Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.
    Type: Application
    Filed: March 1, 2018
    Publication date: September 5, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Wen CHENG, Cheng-Tung LIN, Chih-Wei CHANG, Hong-Mao LEE, Ming-Hsing TSAI, Sheng-Hsuan LIN, Wei-Jung LIN, Yan-Ming TSAI, Yu-Shiuan WANG, Hung-Hsu CHEN, Wei-Yip LOH, Ya-Yi CHENG
  • Publication number: 20190273023
    Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.
    Type: Application
    Filed: March 1, 2018
    Publication date: September 5, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Yip LOH, Chih-Wei CHANG, Hong-Mao LEE, Chun-Hsien HUANG, Yu-Ming HUANG, Yan-Ming TSAI, Yu-Shiuan WANG, Hung-Hsu CHEN, Yu-Kai CHEN, Yu-Wen CHENG
  • Publication number: 20190252247
    Abstract: A method includes forming a trench in a low-K dielectric layer, where the trench exposes an underlying contact area of a substrate. A first tantalum nitride (TaN) layer is conformally deposited within the trench, where the first TaN layer is deposited using atomic layer deposition (ALD) or chemical vapor deposition (CVD). A tantalum (Ta) layer is deposited on the first TaN layer conformally within the trench, where the Ta layer is deposited using physical vapor deposition (PVD). An electroplating process is performed to deposit a conductive layer over the Ta layer. A via is formed over the conductive layer, where forming the via includes depositing a second TaN layer within the via and in contact with the conductive layer.
    Type: Application
    Filed: April 29, 2019
    Publication date: August 15, 2019
    Inventors: Ya-Lien LEE, Hung-Wen SU, Kuei-Pin LEE, Yu-Hung LIN, Yu-Min CHANG
  • Publication number: 20190222816
    Abstract: A light source generating device, a projection apparatus and a light source generation method are provided. The light source generating device includes a first light source, an auxiliary light source, a control device, a driver and a current command generator. The first light source generates a first light beam. The auxiliary light source generates an auxiliary light beam corresponding to the first light beam. The control device generates a first driving signal to drive the first light source. The driver generates an auxiliary driving signal to drive the auxiliary light source according to the gate control signal and a current command. The current command generator receives an indication signal, and generates the current command according to the indication signal, wherein the indication signal corresponds to a driving current of the first light source. The invention has an effect of enhancing brightness/chrominance.
    Type: Application
    Filed: January 10, 2019
    Publication date: July 18, 2019
    Applicant: Coretronic Corporation
    Inventors: Chi-Wen Ke, Hung-Wei Lin, Chun-Yi Lee
  • Publication number: 20190182582
    Abstract: A speaker module includes a bracket, a plurality of first cushion members, a speaker and a plurality of second cushion members. The bracket includes a plurality of first pillars. Each of the first cushion members is disposed on one of the first pillars. The speaker is connected to the first cushion members. The second cushion members are connected to a periphery of the bracket.
    Type: Application
    Filed: December 10, 2018
    Publication date: June 13, 2019
    Inventors: Hung-Yen Huang, Huai-Wen Hsu, Chun-Ming Shen, Chin-Kuei Lee, Cheng-Chih Huang
  • Publication number: 20190172949
    Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.
    Type: Application
    Filed: January 18, 2019
    Publication date: June 6, 2019
    Inventors: Kai-Lin Lee, Zhi-Cheng Lee, Wei-Jen Chen, Ting-Hsuan Kang, Ren-Yu He, Hung-Wen Huang, Chi-Hsiao Chen, Hao-Hsiang Yang, An-Shih Shih, Chuang-Han Hsieh
  • Patent number: 10312098
    Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a conductive plug over a substrate; a conductive feature over the conductive plug, wherein the conductive feature has a first sidewall, a second sidewall facing the first sidewall, and a bottom surface; and a carbon-containing barrier layer having a first portion along the first sidewall of the conductive feature, a second portion along the second sidewall of the conductive feature, and a third portion along the bottom surface of the conductive feature.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: June 4, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Rueijer Lin, Ya-Lien Lee, Chun-Chieh Lin, Hung-Wen Su
  • Publication number: 20190164752
    Abstract: Embodiments disclosed herein relate generally to capping processes and structures formed thereby. In an embodiment, a conductive feature, formed in a dielectric layer, has a metallic surface, and the dielectric layer has a dielectric surface. The dielectric surface is modified to be hydrophobic by performing a surface modification treatment. After modifying the dielectric surface, a capping layer is formed on the metallic surface by performing a selective deposition process. In another embodiment, a surface of a gate structure is exposed through a dielectric layer. A capping layer is formed on the surface of the gate structure by performing a selective deposition process.
    Type: Application
    Filed: November 30, 2018
    Publication date: May 30, 2019
    Inventors: Chih-Chien Chi, Pei-Hsuan Lee, Hung-Wen Su, Hsiao-Kuan Wei, Jui-Fen Chien, Hsin-Yun Hsu
  • Publication number: 20190164751
    Abstract: Embodiments disclosed herein relate generally to capping processes and structures formed thereby. In an embodiment, a conductive feature, formed in a dielectric layer, has a metallic surface, and the dielectric layer has a dielectric surface. The dielectric surface is modified to be hydrophobic by performing a surface modification treatment. After modifying the dielectric surface, a capping layer is formed on the metallic surface by performing a selective deposition process. In another embodiment, a surface of a gate structure is exposed through a dielectric layer. A capping layer is formed on the surface of the gate structure by performing a selective deposition process.
    Type: Application
    Filed: January 25, 2018
    Publication date: May 30, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Chien CHI, Hsiao-Kuan WEI, Hung-Wen SU, Pei-Hsuan LEE, Hsin-Yun HSU, Jui-Fen CHIEN
  • Patent number: 10297560
    Abstract: A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: May 21, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Ming-Che Ho, Hung-Jui Kuo, Yi-Wen Wu, Tzung-Hui Lee
  • Patent number: 10241299
    Abstract: A four-piece optical lens for capturing image and a four-piece optical module for capturing image are provided. In order from an object side to an image side, the optical lens along the optical axis includes a first lens with refractive power; a second lens with refractive power; a third lens with refractive power; and a fourth lens with positive refractive power; and at least one of the image-side surface and object-side surface of each of the four lens elements are aspheric. The optical lens can increase aperture value and improve the imagining quality for use in compact cameras.
    Type: Grant
    Filed: January 4, 2016
    Date of Patent: March 26, 2019
    Assignee: ABILITY OPTO-ELECTRONICS TECHNOLOGY CO. LTD.
    Inventors: Po-Jui Liao, Hung-Wen Lee, Ying Jung Chen, Bo Guang Jhang, Kuo-Yu Liao, Yao Wei Liu, Yeong-Ming Chang
  • Patent number: 9651757
    Abstract: A five-piece optical lens for capturing image and a five-piece optical module for capturing image, along the optical axis in order from an object side to an image side, include a first lens with positive refractive power having a convex object-side surface; a second lens with refractive power; a third lens with refractive power; a fourth lens with refractive power; and a fifth lens with negative refractive power; and at least one of the image-side surface and object-side surface of each of the five lens elements are aspheric. The optical lens can increase aperture value and improve the imagining quality for use in compact cameras.
    Type: Grant
    Filed: January 26, 2015
    Date of Patent: May 16, 2017
    Assignee: ABILITY OPTO-ELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Kuo-Yu Liao, Hung-Kuo Yu, Po-Jui Liao, Hung-Wen Lee, Nai-Yuan Tang, Yeong-Ming Chang
  • Patent number: 9645354
    Abstract: A two-piece optical lens for capturing image and a two-piece optical module for capturing image are provided. In order from an object side to an image side, the optical lens along the optical axis includes a first lens with positive refractive power; and a second lens with refractive power; and at least one of the image-side surface and object-side surface of each of the two lens elements are aspheric. The optical lens can increase aperture value and improve the imagining quality for use in compact cameras.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: May 9, 2017
    Assignee: ABILITY OPTO-ELECTRONICS TECHNOLOGY CO. LTD.
    Inventors: Po-Jui Liao, Hung-Wen Lee
  • Patent number: 9625678
    Abstract: A two-piece optical lens for capturing image and a two-piece optical module for capturing image are provided. In order from an object side to an image side, the optical lens along the optical axis includes a first lens with positive refractive power; and a second lens with refractive power; and at least one of the image-side surface and object-side surface of each of the two lens elements are aspheric. The optical lens can increase aperture value and improve the imagining quality for use in compact cameras.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: April 18, 2017
    Assignee: Ability Opto-Electronics Technology Co., Ltd.
    Inventors: Po-Jui Liao, Hung-Wen Lee
  • Publication number: 20170102518
    Abstract: A four-piece optical lens for capturing image and a four-piece optical module for capturing image are provided. In order from an object side to an image side, the optical lens along the optical axis includes a first lens with refractive power; a second lens with refractive power; a third lens with refractive power; and a fourth lens with positive refractive power; and at least one of the image-side surface and object-side surface of each of the four lens elements are aspheric. The optical lens can increase aperture value and improve the imagining quality for use in compact cameras.
    Type: Application
    Filed: January 4, 2016
    Publication date: April 13, 2017
    Inventors: PO-JUI LIAO, HUNG-WEN LEE, YING JUNG CHEN, BO GUANG JHANG, KUO-YU LIAO, YAO WEI LIU, YEONG-MING CHANG
  • Patent number: D861009
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: September 24, 2019
    Assignees: PHISON ELECTRONICS CORP., Gettop opto technology co., ltd
    Inventors: Yuan-Sheng Lien, Hung-Chin Lee, Tsung-Ping Yu, Hsiao-Wen Fan, Ming-Hsien Lee, Tzu-Jen Wang