Abstract: The present disclosure is directed to a semiconductor device. The semiconductor device includes a substrate, an insulating layer disposed on the substrate, a first conductive feature disposed in the insulating layer, and a capacitor structure disposed on the insulating layer. The capacitor structure includes a first electrode, a first dielectric layer, a second electrode, a second dielectric layer, and a third electrode sequentially stacked. The semiconductor device also includes a first via connected to the first electrode and the third electrode, a second via connected to the second electrode, and a third via connected to the first conductive feature. A part of the first via is disposed in the insulating layer. A portion of the first conductive feature is directly under the capacitor structure.

Abstract: A process for hydrogenation of conjugated diene polymers comprises hydrogenating said polymer in the presence of hydrogen and a hydrogenation catalyst composition comprising: (a) at least one titanium compound represented by the following formula (a): wherein R1 and R2, which may be the same or different, represent a halogen atom, an alkyl group, an aryl group, an arakyl group, a cycloalkyl group, an aryloxy group, an alkoxy group or a carbonyl group, and Cp* represents a cyclopentadienyl group or a derivative having the formula of C5R5, and R5, which may be the same or different, represents a hydrogen atom, an alkyl group an aralkyl group and an aryl group; and (b) at least one silyl hydride.