Patents by Inventor Hung-Yao Chen
Hung-Yao Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145581Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.Type: ApplicationFiled: January 4, 2024Publication date: May 2, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ya-Wen CHIU, Yi Che CHAN, Lun-Kuang TAN, Zheng-Yang PAN, Cheng-Po CHAU, Pin-Chu LIANG, Hung-Yao CHEN, De-Wei YU, Yi-Cheng LI
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Patent number: 11948840Abstract: In an embodiment, a method includes forming a first fin and a second fin within an insulation material over a substrate, the first fin and the second fin includes different materials, the insulation material being interposed between the first fin and the second fin, the first fin having a first width and the second fin having a second width; forming a first capping layer over the first fin; and forming a second capping layer over the second fin, the first capping layer having a first thickness, the second capping layer having a second thickness different from the first thickness.Type: GrantFiled: August 31, 2021Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hung-Yao Chen, Pin-Chu Liang, Hsueh-Chang Sung, Pei-Ren Jeng, Yee-Chia Yeo
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Publication number: 20240090343Abstract: The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel junction. Below the conductive lower electrode is a first conductive via structure in a first dielectric layer. Below the conductive via structure is a discrete conductive jumper structure in a second dielectric layer. A dielectric body of a third dielectric material that is different from the first dielectric material and the second dielectric material extends vertical from the first dielectric layer at least partially into the second dielectric layer.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Inventors: Jun-Yao CHEN, Chun-Heng LIAO, Hung Cho WANG
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Patent number: 11901442Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.Type: GrantFiled: July 27, 2022Date of Patent: February 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ya-Wen Chiu, Yi Che Chan, Lun-Kuang Tan, Zheng-Yang Pan, Cheng-Po Chau, Pin-Chu Liang, Hung-Yao Chen, De-Wei Yu, Yi-Cheng Li
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Publication number: 20230402326Abstract: In an embodiment, a method includes forming a first fin and a second fin within an insulation material over a substrate, the first fin and the second fin includes different materials, the insulation material being interposed between the first fin and the second fin, the first fin having a first width and the second fin having a second width; forming a first capping layer over the first fin; and forming a second capping layer over the second fin, the first capping layer having a first thickness, the second capping layer having a second thickness different from the first tType: ApplicationFiled: August 8, 2023Publication date: December 14, 2023Inventors: Hung-Yao Chen, Pin-Chu Liang, Hsueh-Chang Sung, Pei-Ren Jeng, Yee-Chia Yeo
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Publication number: 20230317831Abstract: A method includes depositing a first dielectric layer over and along sidewalls of a first semiconductor fin and a second semiconductor fin, depositing a second dielectric layer over the first dielectric layer, recessing the first dielectric layer to define a dummy fin between the first semiconductor fin and the second semiconductor fin, forming a cap layer over top surfaces and sidewalls of the first semiconductor fin and the second semiconductor fin, wherein the forming the cap layer comprises depositing the cap layer in a furnace at process temperatures higher than a first temperature, and lowering the temperature of the furnace, wherein during the lowering the temperature of the furnace, the pressure in the furnace is raised to and maintained at 10 torr or higher until the temperature of the furnace drops below the first temperature.Type: ApplicationFiled: June 8, 2023Publication date: October 5, 2023Inventors: Pin Chu Liang, Hung-Yao Chen, Pei-Ren Jeng
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Patent number: 11710781Abstract: A method includes depositing a first dielectric layer over and along sidewalls of a first semiconductor fin and a second semiconductor fin, depositing a second dielectric layer over the first dielectric layer, recessing the first dielectric layer to define a dummy fin between the first semiconductor fin and the second semiconductor fin, forming a cap layer over top surfaces and sidewalls of the first semiconductor fin and the second semiconductor fin, wherein the forming the cap layer comprises depositing the cap layer in a furnace at process temperatures higher than a first temperature, and lowering the temperature of the furnace, wherein during the lowering the temperature of the furnace, the pressure in the furnace is raised to and maintained at 10 torr or higher until the temperature of the furnace drops below the first temperature.Type: GrantFiled: August 30, 2021Date of Patent: July 25, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Pin Chu Liang, Hung-Yao Chen, Pei-Ren Jeng
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Patent number: 11677015Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.Type: GrantFiled: December 2, 2020Date of Patent: June 13, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ya-Wen Chiu, Yi Che Chan, Lun-Kuang Tan, Zheng-Yang Pan, Cheng-Po Chau, Pin-Ju Liang, Hung-Yao Chen, De-Wei Yu, Yi-Cheng Li
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Publication number: 20230064844Abstract: In an embodiment, a method includes forming a first fin and a second fin within an insulation material over a substrate, the first fin and the second fin includes different materials, the insulation material being interposed between the first fin and the second fin, the first fin having a first width and the second fin having a second width; forming a first capping layer over the first fin; and forming a second capping layer over the second fin, the first capping layer having a first thickness, the second capping layer having a second thickness different from the first thickness.Type: ApplicationFiled: August 31, 2021Publication date: March 2, 2023Inventors: Hung-Yao Chen, Pin-Chu Liang, Hsueh-Chang Sung, Pei-Ren Jeng, Yee-Chia Yeo
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Publication number: 20230064078Abstract: A method includes depositing a first dielectric layer over and along sidewalls of a first semiconductor fin and a second semiconductor fin, depositing a second dielectric layer over the first dielectric layer, recessing the first dielectric layer to define a dummy fin between the first semiconductor fin and the second semiconductor fin, forming a cap layer over top surfaces and sidewalls of the first semiconductor fin and the second semiconductor fin, wherein the forming the cap layer comprises depositing the cap layer in a furnace at process temperatures higher than a first temperature, and lowering the temperature of the furnace, wherein during the lowering the temperature of the furnace, the pressure in the furnace is raised to and maintained at 10 torr or higher until the temperature of the furnace drops below the first temperature.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Inventors: Pin Chu Liang, Hung-Yao Chen, Pei-Ren Jeng
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Publication number: 20220376091Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.Type: ApplicationFiled: July 27, 2022Publication date: November 24, 2022Inventors: Ya-Wen CHIU, Yi Che CHAN, Lun-Kuang TAN, Zheng-Yang PAN, Cheng-Po CHAU, Pin-Ju LIANG, Hung-Yao CHEN, De-Wei YU, Yi-Cheng LI
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Publication number: 20210359111Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.Type: ApplicationFiled: December 2, 2020Publication date: November 18, 2021Inventors: Ya-Wen CHIU, Yi Che CHAN, Lun-Kuang TAN, Zheng-Yang PAN, Cheng-Po CHAU, Pin-Ju LIANG, Hung-Yao CHEN, De-Wei YU, Yi-Cheng LI
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Patent number: 10879371Abstract: Embodiments described in this disclosure relate to formation of a gate structure of a device, such as in a replacement gate process, and the device formed thereby. In some examples, after an interfacial layer and a gate dielectric layer are deposited, a rapid anneal process, such as laser anneal or flash lamp anneal process, is performed in a controlled ambient nitrogen-containing environment to form a nitrided portion in the gate dielectric layer. The nitrided portion passivates the defects at the surface of the gate dielectric layer and can serve as a barrier to prevent etchant chemistry and defects/dopants from the subsequent gate stack layers from affecting or diffusing through the gate dielectric layer. Particularly, the rapid anneal process is performed on a millisecond scale to confine nitrogen atoms in the gate dielectric layer without diffusing into the underlying interfacial dielectric and/or any neighboring structure such as fin.Type: GrantFiled: June 12, 2018Date of Patent: December 29, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Yun Li, Huicheng Chang, Che-Hao Chang, Hung-Yao Chen, Cheng-Po Chau, Xiong-Fei Yu, Terry Huang
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Publication number: 20190378913Abstract: Embodiments described in this disclosure relate to formation of a gate structure of a device, such as in a replacement gate process, and the device formed thereby. In some examples, after an interfacial layer and a gate dielectric layer are deposited, a rapid anneal process, such as laser anneal or flash lamp anneal process, is performed in a controlled ambient nitrogen-containing environment to form a nitrided portion in the gate dielectric layer. The nitrided portion passivates the defects at the surface of the gate dielectric layer and can serve as a barrier to prevent etchant chemistry and defects/dopants from the subsequent gate stack layers from affecting or diffusing through the gate dielectric layer. Particularly, the rapid anneal process is performed on a millisecond scale to confine nitrogen atoms in the gate dielectric layer without diffusing into the underlying interfacial dielectric and/or any neighboring structure such as fin.Type: ApplicationFiled: June 12, 2018Publication date: December 12, 2019Inventors: Yi-Yun Li, Huicheng Chang, Che-Hao Chang, Hung-Yao Chen, Cheng-Po Chau, Xiong-Fei Yu, Terry Huang
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Patent number: 10186602Abstract: The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising an upper portion comprising a first semiconductor material having a first lattice constant, wherein the upper portion comprises a first substantially vertical portion having a first width and a second substantially vertical portion having a second width less than the first width over the first substantially vertical portion; and a lower portion comprising a second semiconductor material having a second lattice constant less than the first lattice constant, wherein a top surface of the lower portion has a third width less than the first width; and a gate structure covering the second substantially vertical portion.Type: GrantFiled: September 27, 2016Date of Patent: January 22, 2019Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Yen-Yu Chen, Hung-Yao Chen, Chi-Yuan Shih, Ling-Yen Yeh, Clement Hsingjen Wann
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Publication number: 20170193514Abstract: A method for detection of a suspicious transaction includes: retrieving a data set of client data associated with a client account and a client; assigning respective risk values to items of the data set of client data; calculating a weighted score based on the risk values and a weight list; assigning a risk level to the client based on the weighted score; retrieving transaction details of the client account for calculating a transaction parameter set; and when it is determined that the client account is involved in at least one transaction, determining whether the transaction is a suspicious transaction based on the risk level, the transaction parameter set and a pre-stored rule set.Type: ApplicationFiled: December 29, 2016Publication date: July 6, 2017Inventor: Hung-Yao Chen
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Publication number: 20170018629Abstract: The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising an upper portion comprising a first semiconductor material having a first lattice constant, wherein the upper portion comprises a first substantially vertical portion having a first width and a second substantially vertical portion having a second width less than the first width over the first substantially vertical portion; and a lower portion comprising a second semiconductor material having a second lattice constant less than the first lattice constant, wherein a top surface of the lower portion has a third width less than the first width; and a gate structure covering the second substantially vertical portion.Type: ApplicationFiled: September 27, 2016Publication date: January 19, 2017Inventors: Yen-Yu Chen, Hung-Yao Chen, Chi-Yuan Shih, Ling-Yen Yeh, Clement Hsingjen Wann
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Patent number: 9472652Abstract: The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising an upper portion comprising a first semiconductor material having a first lattice constant, wherein the upper portion comprises a first substantially vertical portion having a first width and a second substantially vertical portion having a second width less than the first width over the first substantially vertical portion; and a lower portion comprising a second semiconductor material having a second lattice constant less than the first lattice constant, wherein a top surface of the lower portion has a third width less than the first width; and a gate structure covering the second substantially vertical portion.Type: GrantFiled: December 20, 2013Date of Patent: October 18, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Yu Chen, Hung-Yao Chen, Chi-Yuan Shih, Ling-Yen Yeh, Clement Hsingjen Wann
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Publication number: 20150179768Abstract: The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising an upper portion comprising a first semiconductor material having a first lattice constant, wherein the upper portion comprises a first substantially vertical portion having a first width and a second substantially vertical portion having a second width less than the first width over the first substantially vertical portion; and a lower portion comprising a second semiconductor material having a second lattice constant less than the first lattice constant, wherein a top surface of the lower portion has a third width less than the first width; and a gate structure covering the second substantially vertical portion.Type: ApplicationFiled: December 20, 2013Publication date: June 25, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Yu Chen, Hung-Yao Chen, Chi-Yuan Shih, Ling-Yen Yeh, Clement Hsingjen Wann
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Publication number: 20050250357Abstract: A chassis ground wire for vehicles includes an outside jacket, a battery negative connection wire, a body connection wire, a voltage exciter and a clamping device. The outside jacket has two opposite ends and a passage defined completely through the outside jacket. The connection wires connect respectively to the opposite ends of the outside jacket and each of them includes a conductor and an insulated coating coated around the conductor. Each conductor has an inside end that extends into and is held in the passage. The voltage exciter is mounted in the passage of the outside jacket and includes a coil with two ends respectively connected to the inside ends of the conductors. The clamping device including screws or deformed inward protrusions is mounted in the outside jacket to hold the inside ends of the conductors in the passage.Type: ApplicationFiled: May 10, 2004Publication date: November 10, 2005Inventors: Hung-Yao Chen, Shih-Yu Hu