Abstract: A soft-switching power converter includes a main switch, an energy-releasing switch, and an inductive coupled unit. The main switch is a controllable switch. The energy-releasing switch is coupled to the main switch. The inductive coupled unit is coupled to the main switch and the energy-releasing switch. The inductive coupled unit includes a first inductance, a second inductance coupled to the first inductance, and an auxiliary switch unit. The auxiliary switch unit is coupled to the second inductance to form a closed loop. The main switch and the energy-releasing switch are alternately turned on and turned off. The auxiliary switch unit is controlled to start turning on before the main switch is turned on so as to provide at least one current path.

Abstract: Provided are a circuit apparatus, a manufacturing method thereof, and a circuit system. The circuit apparatus includes a flexible circuit board, a flexible packaging material layer and an electronic device. The flexible circuit board has at least one hollow pattern, wherein the flexible circuit board has an inner region and a peripheral region surrounding the inner region, and has a first surface and a second surface opposite to each other. The flexible packaging material layer is disposed in the at least one hollow pattern. The electronic device is disposed on the first surface of the flexible circuit board and electrically connected with the flexible circuit board.

Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: Provided herein is a pharmaceutical composition for treating cancers. The pharmaceutical composition includes an oil-in-water (o/w) microemulsion, and an active pharmaceutical ingredient dissolved therein. The o/w microemulsion is comprised of an aqueous solution, an oil, and a surfactant, and is about 5-250 nm in diameter. Also provided herein are methods for treating cancers by use of the present pharmaceutical composition.

Abstract: A peptide-imprinted conductive polymer and use thereof is provided, especially a peptide-imprinted conductive polymer including conductive polymer monomer(s), two-dimensional (2D) material(s), and a small peptide fragment of ?-synuclein as template. The peptide-imprinted conductive polymer has high sensibility, detects ?-synuclein at low concentrations, thus allowing early diagnosis and treatment of Parkinson's disease.

Abstract: The present invention discloses an ?-synuclein sensing film, a manufacturing method and a use thereof. The ?-synuclein sensing film comprises a base plate and plural ?-synuclein sensing polymers polymerized on the base plate. Each of the plural ?-synuclein sensing polymers has plural ?-synuclein detection holes on a surface thereof. The plural ?-synuclein sensing polymers are manufactured by electropolymerization, and the plural ?-synuclein detection holes are imprinted by an ?-synuclein peptide. A sample to be tested can be applied to the ?-synuclein sensing film for detecting the ?-synuclein therein.

Abstract: Provided herein is a pharmaceutical composition for treating cancers. The pharmaceutical composition includes an oil-in-water (o/w) microemulsion, and an active pharmaceutical ingredient dissolved therein. The o/w microemulsion is comprised of an aqueous solution, an oil, and a surfactant, and is about 5-250 nm in diameter. Also provided herein are methods for treating cancers by use of the present pharmaceutical composition.

Abstract: Provided herein is a pharmaceutical composition for treating cancers. The pharmaceutical composition includes an oil-in-water (o/w) microemulsion, and an active pharmaceutical ingredient dissolved therein. The o/w microemulsion is comprised of an aqueous solution, an oil, and a surfactant, and is about 5-250 nm in diameter. Also provided herein are methods for treating cancers by use of the present pharmaceutical composition.

Abstract: Provided herein is a pharmaceutical composition for treating cancers. The pharmaceutical composition includes an oil-in-water (o/w) microemulsion, and an active pharmaceutical ingredient dissolved therein. The o/w microemulsion is comprised of an aqueous solution, an oil, and a surfactant, and is about 5-250 nm in diameter. Also provided herein are methods for treating cancers by use of the present pharmaceutical composition.

Abstract: An advanced process control (APC) method for controlling a width of a spacer in a semiconductor device includes: providing a semiconductor substrate; providing a target width of a gate; forming the gate on the semiconductor substrate, in which the gate has a measured width; depositing a dielectric layer covering the gate, in which the dielectric layer has a measured thickness; providing a target width of the spacer; determining a trim time of the dielectric layer based on the target width of the gate, the measured width of the gate, the target width of the spacer, and the measured thickness of the dielectric layer; and performing a trimming process on the dielectric layer for the determined trim time to form the spacer.

Abstract: A method for controlling processing temperature in semiconductor fabrication is provided. The method includes detecting temperature in a first chamber configured to process a semiconductor wafer. The method further includes creating a flow of heat-exchange medium in a second chamber which is connected to the first chamber to cool the first chamber. The method also includes controlling the flow of heat-exchange medium according to the temperature detected in the first chamber by changing a covered area of a first ventilation unit which allows the entry of the heat-exchange medium to the second chamber.

Abstract: An advanced process control (APC) method for controlling a width of a spacer in a semiconductor device includes: providing a semiconductor substrate; providing a target width of a gate; forming the gate on the semiconductor substrate, in which the gate has a measured width; depositing a dielectric layer covering the gate, in which the dielectric layer has a measured thickness; providing a target width of the spacer; determining a trim time of the dielectric layer based on the target width of the gate, the measured width of the gate, the target width of the spacer, and the measured thickness of the dielectric layer; and performing a trimming process on the dielectric layer for the determined trim time to form the spacer.

Abstract: An advanced process control (APC) method for controlling a width of a spacer in a semiconductor device includes: providing a semiconductor substrate; providing a target width of a gate; forming the gate on the semiconductor substrate, in which the gate has a measured width; depositing a dielectric layer covering the gate, in which the dielectric layer has a measured thickness; providing a target width of the spacer; determining a trim time of the dielectric layer based on the target width of the gate, the measured width of the gate, the target width of the spacer, and the measured thickness of the dielectric layer; and performing a trimming process on the dielectric layer for the determined trim time to form the spacer.

Abstract: An advanced process control (APC) method for controlling a width of a spacer in a semiconductor device includes: providing a semiconductor substrate; providing a target width of a gate; forming the gate on the semiconductor substrate, in which the gate has a measured width; depositing a dielectric layer covering the gate, in which the dielectric layer has a measured thickness; providing a target width of the spacer; determining a trim time of the dielectric layer based on the target width of the gate, the measured width of the gate, the target width of the spacer, and the measured thickness of the dielectric layer; and performing a trimming process on the dielectric layer for the determined trim time to form the spacer.

Abstract: This invention relates to biotechnology, more particularly, to an improved liposomal drug delivery system. Liposomes treated with or incorporating a surface active dopant, such as those containing polymers or oligomers of ethylene glycol as their hydrophilic “headgroup” component, have strongly increased permeabilizability when exposed to ultrasound. Permeabilizability was measured by the rate of release of self-quenching fluorescent dye at concentrations that caused no increase in permeability in the absence of ultrasound. The surface active dopants reached maximal effectiveness at about 1% of their critical micelle concentration. As disclosed by the present invention, surface active dopants, such as a PEG-lipid and a PLURONIC® triblock copolymer and a PEG-PBLA block copolymer, can be irreversibly incorporated into liposomes to give formulations for use as drug delivery vehicles.