Patents by Inventor Hung Yip Ng

Hung Yip Ng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for polysilicon conductor (PC) Trimming for shrinking critical dimension and isolated-nested offset correction
    Publication number: 20020142252
    Abstract: A method of forming a semiconductor device, includes providing a structure having a first critical dimension, forming a lithographic pattern on the structure, and etching the structure with an O2-containing material to trim the first critical dimension to a second critical dimension, the second critical dimension being smaller than the first critical dimension. Thereafter, any offset between the nested features and the isolated feature can be corrected.
    Type: Application
    Filed: March 29, 2001
    Publication date: October 3, 2002
    Applicant: International Business Machines Corporation
    Inventor: Hung Yip Ng